Infineon Technologies IRF3315S

Overview

IRF3315S from Infineon Technologies (formerly International Rectifier) is a 150 V, 48 A, 20 mΩ N-channel HEXFET® Power MOSFET in TO-263 (D²PAK) package, optimized for high-efficiency DC-DC conversion and motor control switching in industrial power supplies.

For engineers reviewing the IRF3315S datasheet, IRF3315S pinout, IRF3315S application, or IRF3315S equivalent, key selection criteria include R_DS(on) at 10 V gate drive, peak pulsed drain current rating, thermal resistance (R_θJC), and avalanche energy capability under repetitive conditions.

Technical Context

This MOSFET employs planar silicon process technology with optimized cell pitch and trench-assisted charge balancing to achieve low on-resistance while maintaining robust short-circuit withstand time (≥10 µs at V_DD = 75 V, V_GS = 10 V). It features fully rated avalanche capability per UIS test (E_AS = 290 mJ).

The device supports standard gate drive (10 V) and exhibits gate threshold voltage (V_GS(th)) of 2.0–4.0 V, with total gate charge (Q_g) of 71 nC at V_GS = 10 V and V_DS = 75 V - enabling fast turn-on/turn-off in hard-switched topologies.

Key Specifications

Pinout & Package

Package: TO-263 (D²PAK), surface-mount, isolated tab (drain-connected), 3-pin configuration with Gull-wing leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, 150 V MOSFET applications.

Compared with STP150N10F7 and IXFH30N15X3, the IRF3315S delivers optimal balance of voltage margin, conduction loss, and gate drive efficiency for 48–96 V industrial power stages operating above 50 kHz.

Availability

IRF3315S is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and uninterruptible power supplies requiring stable component supply across multi-year production cycles.

Supply support for IRF3315S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF3315S belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion and motor control systems where ruggedness and thermal performance are critical.

FAQ

What is the maximum allowable gate-source voltage for IRF3315S?

The absolute maximum V_GS rating is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended drive is 10 V for full enhancement, with 0 V to ensure full turn-off. Gate resistors should limit dV/dt to prevent oscillation during switching transitions.

Does IRF3315S require a gate driver IC in typical applications?

Yes - due to its 71 nC total gate charge, discrete transistor drivers or dedicated gate driver ICs (e.g., IR2110, UCC27531) are required to achieve <100 ns turn-on/turn-off times. Direct microcontroller GPIO driving is insufficient and risks shoot-through or excessive switching loss.

Is IRF3315S suitable for paralleling multiple devices?

Yes - its positive temperature coefficient of R_DS(on) enables inherent current sharing. Layout must ensure matched gate loop inductance and symmetrical source routing. Thermal coupling via shared heatsink improves balance; derating to 85% of total rated current is recommended for 2+ parallel units.

What is the typical junction-to-case thermal resistance (R_θJC) value?

The specified R_θJC is 0.55°C/W, measured from junction to the center of the drain tab under JEDEC-standard test conditions (1 cm² copper pad, 1 oz Cu, no airflow). Actual thermal performance depends on PCB copper area, solder quality, and heatsink interface resistance.