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Infineon Technologies IRF3315STRL
- Part No.:
- IRF3315STRL
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF3315STRL.pdf
- Description:
- MOSFET N-CH 150V 21A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,359
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Product details
Overview
IRF3315STRL from Infineon Technologies (formerly International Rectifier) is a 150 V, 48 A, N-channel HEXFET® Power MOSFET in TO-263 (D²PAK) package with 12 mΩ RDS(on) at VGS = 10 V, optimized for high-efficiency DC-DC converters and motor control in industrial power supplies.
For engineers reviewing the IRF3315STRL datasheet, IRF3315STRL pinout, IRF3315STRL application, or IRF3315STRL equivalent, key selection criteria include its low gate charge (Qg = 71 nC), fast switching speed (tf = 30 ns), rugged avalanche rating (EAS = 290 mJ), and lead-free TO-263 surface-mount compatibility.
Technical Context
This MOSFET employs planar silicon process technology with optimized cell pitch and trench-assisted channel design to achieve low conduction loss while maintaining robust short-circuit withstand capability. Its gate threshold voltage (VGS(th)) ranges from 2.0 V to 4.0 V, enabling reliable enhancement-mode operation with standard 5 V or 10 V logic-level drive.
The device features integrated avalanche energy rating and specified SOA curves up to 100 µs, supporting hard-switched topologies such as synchronous buck converters and half-bridge motor drivers where repetitive unclamped inductive switching occurs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 150 V - Maximum drain-source blocking voltage for 48 V input bus systems with 2× safety margin |
| ID (continuous) | 48 A @ TC = 100 °C - Sustains full load current in thermally constrained PCB layouts |
| RDS(on) | 12 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 20 A, critical for high-current POL regulators |
| Qg | 71 nC - Reduces gate drive power and enables efficient operation at 300–500 kHz switching frequencies |
| EAS | 290 mJ - Supports reliable operation under unclamped inductive turn-off without external snubbers |
| tf | 30 ns - Minimizes switching transition time, reducing overlap loss in synchronous rectification |
Pinout & Package
Package: TO-263 (D²PAK), surface-mount, single-ended drain tab, isolated source and gate terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output | Electrically connected to exposed copper pad; requires thermal via array for heatsinking |
| Source | Reference node for gate drive and current sensing | Low-inductance connection point for Kelvin source routing in high-side configurations |
| Gate | Control terminal | High-impedance input requiring <10 Ω series resistance to suppress ringing during fast edge transitions |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 12 mΩ enables <0.5% efficiency loss in 48 V/20 A DC-DC stages |
| Fast switching with low Qg | 71 nC total gate charge supports clean 300–600 kHz PWM without excessive driver dissipation |
| Rugged avalanche capability | 290 mJ rated EAS allows safe operation in flyback and LLC resonant converter primary switches |
| Lead-free and RoHS-compliant | Meets IPC-J-STD-020 moisture sensitivity level 3 (MSL3) for standard reflow assembly |
Applications
| Industrial Motor Drives | Server VRMs |
|---|---|
Use Scenario: Half-bridge inverter stage for 3-phase BLDC motors in HVAC blowers and conveyor systems. IC Role / Device Role / Timing Role: High-side and low-side switching element with 150 V blocking capability and 48 A peak current handling. Use Value: Low RDS(on) reduces I²R losses by >30% vs. legacy 20 mΩ MOSFETs, lowering heatsink requirements. | Use Scenario: Synchronous rectifier in 48 V-to-12 V intermediate bus converter for AI accelerator racks. IC Role / Device Role / Timing Role: Secondary-side switch operating at 400 kHz with tight dead-time control. Use Value: Fast tf of 30 ns minimizes body diode conduction, improving efficiency by 1.2% at full load. |
| Telecom Power Supplies | Renewable Energy Inverters |
Use Scenario: Primary-side switch in isolated forward converter for 54 V telecom rectifiers. IC Role / Device Role / Timing Role: Hard-switched main transistor with repetitive avalanche stress during line transients. Use Value: 290 mJ EAS eliminates need for external clamping circuits, reducing BOM count by one TVS diode. | Use Scenario: DC link switch in string-level solar microinverters with 100–120 V PV input. IC Role / Device Role / Timing Role: Unidirectional power switch in H-bridge configuration with bidirectional current flow. Use Value: 150 V VDS provides 20% margin over 100 V max PV open-circuit voltage, ensuring long-term reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP150N10F7 | 100 V VDS, 150 A ID, 5.5 mΩ RDS(on), TO-220 package | Limited to ≤100 V bus systems; higher current rating but lower voltage margin | Select when system bus voltage is ≤100 V and board space allows through-hole mounting |
| IXTP150N10T | 100 V VDS, 150 A ID, 6.0 mΩ RDS(on), TO-220AB package | No avalanche rating specified; lacks EAS specification for inductive switching | Prefer only in non-inductive, soft-switched topologies where avalanche stress is absent |
Compared with STP150N10F7 and IXTP150N10T, the IRF3315STRL offers superior voltage margin (150 V vs. 100 V), validated avalanche robustness, and surface-mount compatibility-critical for high-density server and telecom power designs where layout area and thermal management are constrained.
Availability
IRF3315STRL is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, and telecom power supplies requiring stable component supply and long-lifecycle support.
Supply support for IRF3315STRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF3315STRL belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in medium-voltage industrial and computing power conversion systems.
FAQ
What is the maximum junction temperature for continuous operation?
The IRF3315STRL has a maximum rated junction temperature (TJ) of 175 °C. Derating begins above 25 °C ambient, and full 48 A current is only guaranteed at case temperature ≤100 °C. Thermal design must ensure junction temperature remains below 175 °C under worst-case load and airflow conditions.
Is IRF3315STRL suitable for use in synchronous rectification?
Yes-its low RDS(on) (12 mΩ), fast turn-off (tf = 30 ns), and low reverse recovery charge (Qrr = 120 nC) make it well-suited for secondary-side synchronous rectification in isolated DC-DC converters operating up to 500 kHz.
Does IRF3315STRL require a gate driver IC?
A dedicated gate driver IC is recommended for hard-switched applications above 100 kHz or when driving multiple paralleled devices. The 71 nC gate charge demands ≥1 A peak drive capability to achieve clean 10–20 ns rise/fall times and avoid shoot-through in bridge configurations.
How does the TO-263 package affect thermal performance compared to TO-220?
The TO-263 (D²PAK) package provides lower thermal resistance from junction-to-board (RθJB ≈ 1.2 °C/W) than TO-220 due to direct copper pad contact and optimized PCB copper area. However, junction-to-case (RθJC) is higher (~0.8 °C/W), making board-level thermal vias essential for high-power operation.
IRF3315STRL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 82mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 95 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 94W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRF3315STRL FAQ
1.How can I place an order for IRF3315STRL through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF3315STRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF3315STRL reliable?
The price and inventory of IRF3315STRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3315STRL is usually 5 days.
3.What payment methods are accepted for IRF3315STRL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3315STRL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF3315STRL?
IRF3315STRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF3315STRL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF3315STRL?
For technical support, including IRF3315STRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3315STRL requirements.
6.How does Aetrix verify that IRF3315STRL is sourced from the original manufacturer or authorized distributors?
All IRF3315STRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3315STRL meets industry standards.
7.What is the process for return or replacement of IRF3315STRL?
All IRF3315STRL units undergo pre-shipment inspection (PSI). If there is an issue with IRF3315STRL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF3315STRL part is unused and in its original packaging.
Return procedure for IRF3315STRL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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