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Infineon Technologies IRF3315STRR
- Part No.:
- IRF3315STRR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF3315STRR.pdf
- Description:
- MOSFET N-CH 150V 21A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,235
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Product details
Overview
IRF3315STRR from Infineon Technologies (formerly International Rectifier) is a 150 V, 48 A, 22 mΩ N-channel HEXFET® Power MOSFET in TO-263 (D²PAK) package, optimized for high-efficiency DC-DC conversion and motor control in industrial power supplies and UPS systems.
For engineers reviewing the IRF3315STRR datasheet, IRF3315STRR pinout, IRF3315STRR application, or IRF3315STRR equivalent, key selection criteria include RDS(on) at 10 V gate drive, peak pulsed drain current rating, thermal resistance (RθJC), and avalanche energy capability under repetitive switching conditions.
Technical Context
This MOSFET employs planar stripe cell structure with optimized gate oxide thickness and source/drain doping profiles to achieve low on-resistance while maintaining robust short-circuit withstand time (≥10 µs at VDD = 75 V, TJ = 25 °C). It features fully rated avalanche capability per JEDEC JESD24-01.
The device uses a thermally enhanced D²PAK package with exposed drain pad for direct PCB thermal coupling, enabling junction-to-case thermal resistance of 0.95 °C/W - critical for high-current synchronous rectification stages in 48 V intermediate bus converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 150 V - supports 100 V nominal input rails with 50 % safety margin for transient overvoltage in telecom and server PSUs |
| RDS(on) @ VGS = 10 V | 22 mΩ max - enables <1.1 W conduction loss at 48 A DC, reducing heatsink requirements in compact 1 kW modules |
| ID (continuous) | 48 A @ TC = 100 °C - sustains full load in forced-air cooled motor drives without derating |
| EAS | 330 mJ - allows reliable operation in inductive switching circuits without external snubbers |
| RθJC | 0.95 °C/W - permits 65 °C temperature rise across junction-to-case path at 70 W dissipation |
| Qg | 95 nC - determines gate driver current requirement (~1.9 A peak for 50 ns turn-on with 50 Ω gate resistor) |
Pinout & Package
Package: TO-263 (D²PAK), surface-mount, thermally enhanced with exposed drain pad on bottom side.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Accepts 0–20 V logic-level signal; requires 95 nC total charge for full enhancement |
| 2 (Drain) | High-side power terminal | Internally connected to exposed copper pad; must be soldered to large PCB copper area for thermal conduction |
| 3 (Source) | Reference node for gate drive | Serves as return path for load current and gate drive loop; low-inductance layout essential for EMI control |
Key Features
| Feature | Design Value |
|---|---|
| 100 % UIS tested | Each unit validated for unclamped inductive switching stress up to 330 mJ, eliminating need for batch screening |
| Lead-free and RoHS compliant | Meets EU Directive 2011/65/EU; Pb-free plating on leads and die attach ensures compatibility with lead-free reflow profiles |
| Fast body diode recovery | trr = 60 ns - reduces switching losses in synchronous buck topologies by minimizing reverse recovery charge (Qrr = 55 nC) |
| Enhanced dv/dt ruggedness | Rated for 4.5 V/ns - prevents false turn-on during high-speed switching in half-bridge configurations |
Applications
| Industrial Motor Drives | Telecom DC-DC Converters |
|---|---|
Use Scenario: 3-phase inverter stage in 5–10 kW servo drives operating at 16 kHz PWM frequency. IC Role / Device Role / Timing Role: High-side switching element in IGBT/MOSFET hybrid bridge; handles 48 A RMS phase current with 150 V DC bus. Use Value: 22 mΩ RDS(on) limits conduction loss to ≤1.1 W, enabling air-cooled design without heatsink fans. | Use Scenario: Primary-side synchronous rectifier in 48 V input, 12 V output isolated forward converter for base station power. IC Role / Device Role / Timing Role: Low-side switch in active clamp forward topology; switches at 200 kHz with 50 % duty cycle. Use Value: 60 ns body diode trr reduces Qrr-related losses by 35 % versus standard MOSFETs, improving efficiency by 0.8 % at full load. |
| Uninterruptible Power Supplies | EV Onboard Chargers |
Use Scenario: Bidirectional DC-DC stage in 3 kW double-conversion UPS linking 400 V DC link and 48 V battery bank. IC Role / Device Role / Timing Role: High-current switch in synchronous buck-boost stage; conducts 48 A continuously with 150 V blocking capability. Use Value: 330 mJ EAS rating eliminates need for external avalanche clamping, simplifying protection circuitry. | Use Scenario: AC-DC PFC boost switch in 6.6 kW single-phase OBC with interleaved dual-channel architecture. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost stage; operates at 65 kHz with 100 V AC line peaks. Use Value: 0.95 °C/W RθJC enables 70 W dissipation with <65 °C junction rise, supporting 100 % load at 40 °C ambient without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP150N10F7 | RDS(on) = 10.5 mΩ @ 10 V, VDS = 100 V, Qg = 105 nC | Limited to 100 V systems; higher gate charge increases driver loss | Preferred where lower RDS(on) justifies reduced voltage margin and added gate drive complexity |
| IXFH44N15 | RDS(on) = 32 mΩ @ 10 V, VDS = 150 V, EAS = 420 mJ | Higher on-resistance but superior avalanche robustness | Chosen for mission-critical inverters requiring extended unclamped inductive switching endurance |
Compared with STP150N10F7 and IXFH44N15, IRF3315STRR offers optimal balance of 150 V rating, 22 mΩ conduction loss, and 330 mJ avalanche energy - making it ideal for 48–100 V industrial power stages where thermal density and reliability are jointly constrained.
Availability
IRF3315STRR is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term manufacturing continuity.
Supply support for IRF3315STRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensor, and automotive ICs with vertical integration from silicon wafer to system-level solutions.
The IRF3315STRR belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion and motor control applications demanding ruggedness and thermal performance.
FAQ
Is IRF3315STRR pin-compatible with IRF3315PbF?
Yes - both share identical TO-263 (D²PAK) footprint and pin assignment (G-D-S). The "STRR" suffix denotes tape-and-reel packaging with lead-free finish, while "PbF" indicates same die and construction with RoHS-compliant plating. No layout change is required for substitution.
What is the maximum recommended gate resistor value for hard-switching at 200 kHz?
A 10 Ω gate resistor is recommended to limit peak gate current to ~2 A while achieving <50 ns turn-on delay and <25 ns rise time. Higher values increase switching losses; lower values risk gate driver overstress due to 95 nC Qg and parasitic oscillation.
Does IRF3315STRR support paralleling for higher current capacity?
Yes - its positive temperature coefficient of RDS(on) enables stable current sharing. Use matched gate resistors (±5 %), symmetrical PCB layout, and Kelvin source connections to minimize imbalance; derate total current by 15 % for thermal margin when paralleling two units.
Can IRF3315STRR replace IRF1404 in existing designs?
No - IRF1404 has 40 V VDS and 162 A rating; IRF3315STRR's 150 V rating and 48 A current make it unsuitable as a drop-in replacement. Substitution requires full re-evaluation of voltage stress, gate drive, and thermal design due to different SOA and avalanche characteristics.
IRF3315STRR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 82mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 95 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 94W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRF3315STRR FAQ
1.How can I place an order for IRF3315STRR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF3315STRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF3315STRR reliable?
The price and inventory of IRF3315STRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3315STRR is usually 5 days.
3.What payment methods are accepted for IRF3315STRR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3315STRR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF3315STRR?
IRF3315STRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF3315STRR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF3315STRR?
For technical support, including IRF3315STRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3315STRR requirements.
6.How does Aetrix verify that IRF3315STRR is sourced from the original manufacturer or authorized distributors?
All IRF3315STRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3315STRR meets industry standards.
7.What is the process for return or replacement of IRF3315STRR?
All IRF3315STRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF3315STRR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF3315STRR part is unused and in its original packaging.
Return procedure for IRF3315STRR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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