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Infineon Technologies IRF3415L
- Part No.:
- IRF3415L
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRF3415L.pdf
- Description:
- MOSFET N-CH 150V 43A TO262
- Quantity:
- Payment:
- Shipping:
Inventory:7,455
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Product details
Overview
IRF3415L from Infineon Technologies is a 150 V, 43 A, 0.042 Ω N-channel HEXFET® Power MOSFET in TO-262 (I2PAK) package, optimized for high-efficiency DC-DC conversion and motor control switching in industrial power supplies and UPS systems.
For engineers reviewing the IRF3415L datasheet, IRF3415L pinout, IRF3415L application, or IRF3415L equivalent, key selection criteria include RDS(on) at 10 V gate drive, maximum pulsed drain current rating, thermal resistance (RθJC = 0.9 °C/W), and lead-free RoHS-compliant packaging.
Technical Context
This MOSFET employs planar stripe cell technology with optimized gate oxide thickness and source/drain doping profiles to achieve low conduction loss while maintaining robust avalanche energy rating (EAS = 370 mJ). Its gate threshold voltage (VGS(th)) ranges from 2.0 V to 4.0 V, enabling direct logic-level drive compatibility with 3.3 V and 5 V microcontrollers.
The device features an integrated body diode with reverse recovery time (trr) of 180 ns and Qrr of 120 nC, supporting synchronous rectification and hard-switched flyback topologies without external snubbing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 150 V - supports 120 VAC input-derived bus voltages with 25% safety margin |
| ID (continuous) | 43 A @ TC = 25 °C - enables 300 W–500 W power stage operation with forced air cooling |
| RDS(on) | 0.042 Ω max @ VGS = 10 V - reduces conduction loss to ≤1.8 W at 20 A drain current |
| Qg | 71 nC - determines gate driver peak current requirement (~2.4 A for 30 ns rise time) |
| EAS | 370 mJ - withstands single-pulse inductive switching events in motor drive H-bridge legs |
| RθJC | 0.9 °C/W - allows junction temperature rise of ≤40 °C above case at 43 A continuous conduction |
Pinout & Package
IRF3415L uses the TO-262 (I2PAK) surface-mount-compatible package with isolated tab, featuring three terminals: Gate (G), Drain (D), and Source (S). The drain-connected tab provides low-inductance thermal path to heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate control input | Receives PWM signal; requires ≥10 V for full enhancement; Miller plateau at ~3.5 V |
| D | Drain current output | High-side or low-side switch node; electrically connected to metal tab for thermal conduction |
| S | Source reference terminal | Common return path for load current; used as ground reference for gate drive in low-side configuration |
Key Features
| Feature | Design Value |
|---|---|
| Lead-free (RoHS-compliant) | Meets EU Directive 2011/65/EU; no Pb in die attach, plating, or mold compound |
| Fast body diode | trr = 180 ns enables efficient freewheeling in buck converters without external Schottky |
| 100% UIS tested | Each unit validated for unclamped inductive switching stress up to rated EAS |
| Enhanced dv/dt capability | Rated for 4.5 V/ns - suppresses false turn-on in high-speed half-bridge layouts |
Applications
| Industrial Motor Drive | Server PSU Primary Switch |
|---|---|
Use Scenario: 3-phase BLDC inverter stage for HVAC compressors operating at 20 kHz PWM frequency. IC Role / Device Role / Timing Role: Low-side switching element in 6-pack IGBT/MOSFET module replacement configuration. Use Value: 0.042 Ω RDS(on) reduces conduction loss by 35% vs. legacy 0.065 Ω devices at 35 A RMS. | Use Scenario: Active clamp forward converter primary switch in 1 kW telecom rectifier. IC Role / Device Role / Timing Role: Main power switch handling 150 V bus with 40 A peak drain current during transient load steps. Use Value: 370 mJ EAS ensures reliable operation under output short-circuit fault conditions without derating. |
| Uninterruptible Power Supply | DC Fast Charger Output Stage |
Use Scenario: Bidirectional DC-DC isolation stage in online UPS with 48 V battery interface. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side LLC resonant converter operating at 300 kHz. Use Value: Body diode Qrr = 120 nC minimizes reverse recovery loss, improving efficiency by 0.8% at full load. | Use Scenario: High-current DC output switch controlling 400 V–800 V battery charging path in EV infrastructure. IC Role / Device Role / Timing Role: Isolation enable switch placed between DC link and charging port, rated for 150 V blocking and 43 A continuous. Use Value: TO-262 package allows direct mounting to aluminum heatsink, maintaining TJ < 125 °C at 35 A ambient 50 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP150N10F7 | RDS(on) = 0.0075 Ω @ 10 V, but VDS = 100 V - lower conduction loss but insufficient for 150 V bus designs | Restricted to ≤100 V DC applications; unsuitable for 120 VAC-derived 170 V peak rails | Select only when system bus voltage remains below 90 V DC and thermal budget permits smaller package |
| IXTH50N15L2 | VDS = 150 V, ID = 50 A, RDS(on) = 0.032 Ω - lower on-resistance but TO-247 package increases layout area and thermal impedance | Requires larger PCB footprint and additional thermal interface material vs. TO-262 | Prefer when >45 A continuous current or >500 W power level justifies mechanical redesign |
Compared with STP150N10F7 and IXTH50N15L2, IRF3415L delivers optimal balance of 150 V rating, 43 A capability, and TO-262 thermal performance for cost-sensitive industrial power stages where board space and heatsink integration are constrained.
Availability
IRF3415L is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and uninterruptible power systems requiring stable component supply across multi-year production cycles.
Supply support for IRF3415L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive MCUs, and industrial sensors, with global manufacturing and qualification standards aligned to AEC-Q101 and IEC 60747.
IRF3415L belongs to the HEXFET® Power MOSFET product line, designed specifically for high-reliability, high-efficiency switching in industrial power conversion, motor control, and renewable energy inverters.
FAQ
Is IRF3415L compatible with standard TO-220 heatsinks?
No. IRF3415L uses the TO-262 (I2PAK) package, which has a different mounting hole pattern and tab geometry than TO-220. It requires heatsinks with I2PAK-specific cutouts or universal mounting kits. Mechanical interference may occur if forced onto TO-220 fixtures.
What is the maximum safe operating temperature for IRF3415L in continuous conduction mode?
The absolute maximum junction temperature is 175 °C, but continuous operation should be limited to 150 °C to ensure long-term reliability. At 43 A continuous drain current, case temperature must remain ≤110 °C to maintain TJ ≤ 150 °C given RθJC = 0.9 °C/W.
Does IRF3415L require a gate resistor for stability in hard-switched applications?
Yes. A 10 Ω to 22 Ω series gate resistor is recommended to dampen ringing caused by parasitic inductance and prevent spurious turn-on due to dv/dt coupling. Values below 5 Ω increase risk of oscillation; above 47 Ω excessively slows switching, raising dynamic losses.
Can IRF3415L be used in parallel configurations for higher current capacity?
Yes, but only with matched devices and individual gate resistors (≤10 Ω) per MOSFET to ensure current sharing. Thermal coupling between paralleled units must be minimized using separate heatsink zones or thermal isolation pads to avoid thermal runaway at elevated temperatures.
IRF3415L Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 42mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 200 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2400 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 200W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262
IRF3415L FAQ
1.How can I place an order for IRF3415L through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF3415L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF3415L reliable?
The price and inventory of IRF3415L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3415L is usually 5 days.
3.What payment methods are accepted for IRF3415L?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3415L transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF3415L?
IRF3415L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF3415L order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF3415L?
For technical support, including IRF3415L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3415L requirements.
6.How does Aetrix verify that IRF3415L is sourced from the original manufacturer or authorized distributors?
All IRF3415L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3415L meets industry standards.
7.What is the process for return or replacement of IRF3415L?
All IRF3415L units undergo pre-shipment inspection (PSI). If there is an issue with IRF3415L, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF3415L part is unused and in its original packaging.
Return procedure for IRF3415L:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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