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Infineon Technologies IRF3415S
- Part No.:
- IRF3415S
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF3415S.pdf
- Description:
- MOSFET N-CH 150V 43A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:9,550
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Product details
Overview
IRF3415S from Infineon Technologies is a 150 V, 43 A, N-channel HEXFET® Power MOSFET in TO-262 (I²PAK) package with 0.055 Ω RDS(on) at VGS = 10 V, optimized for high-efficiency DC-DC converters and motor control circuits in industrial power supplies.
For engineers reviewing the IRF3415S datasheet, IRF3415S pinout, IRF3415S application, or IRF3415S equivalent, key selection criteria include its low gate charge (Qg = 71 nC), fast switching speed (tf = 35 ns), rugged avalanche rating (EAS = 390 mJ), and lead-free TO-262 packaging for thermal reliability in high-current switching nodes.
Technical Context
This MOSFET employs planar stripe cell structure and optimized doping profile to achieve low conduction loss while maintaining robust short-circuit withstand capability. Its gate threshold voltage (VGS(th)) ranges from 2.0 V to 4.0 V, enabling direct drive from 3.3 V and 5 V logic controllers.
The device features integrated body diode with reverse recovery time (trr) of 120 ns and Qrr of 110 nC, supporting synchronous rectification and freewheeling operation in buck and half-bridge topologies without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 150 V - supports 120 VAC input-derived bus voltages with 25% margin for surge handling |
| ID (continuous) | 43 A @ TC = 25°C - delivers >30 A sustained current in forced-air-cooled 4-layer PCB layouts |
| RDS(on) | 0.055 Ω max @ VGS = 10 V - reduces conduction loss to <1.5 W at 20 A, critical for 85%+ efficiency designs |
| Qg | 71 nC - enables <100 kHz PWM switching with standard gate drivers without excessive driver power dissipation |
| EAS | 390 mJ - sustains single-pulse inductive energy without failure during motor stall or load dump events |
| tf | 35 ns - limits switching transition losses in hard-switched SMPS operating above 50 kHz |
Pinout & Package
IRF3415S uses TO-262 (I²PAK) package: 3-pin, single-ended, surface-mount compatible with through-hole reflow or wave soldering; tab is drain-connected for direct heatsink mounting and low-inductance power path routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main power output terminal | Electrically connected to metal tab - must be isolated from chassis unless system ground reference permits; enables low-thermal-resistance path to heatsink |
| Gate | Control input | High-impedance MOS gate requiring <100 nA leakage current; sensitive to ESD - requires series resistor (10–47 Ω) and TVS protection in layout |
| Source | Power return and signal reference | Common node for gate drive return and current sensing; low-inductance source trace routing essential to prevent oscillation during dI/dt transients |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees single-pulse energy handling up to 390 mJ without parameter shift or failure - eliminates need for external clamping in inductive load circuits |
| Enhanced dv/dt capability | Rated for 4.5 V/ns - prevents false turn-on in high-noise motor drive environments with fast-rising bus transients |
| Lead-free and RoHS compliant | Meets JEDEC J-STD-020 moisture sensitivity level 1 - allows unlimited floor life and standard reflow profiles without baking |
| Low gate charge | 71 nC total gate charge enables use of low-power gate drivers (e.g., TC4420) without thermal derating in compact 24 V/48 V systems |
Applications
| Industrial Motor Drives | DC-DC Converters |
|---|---|
Use Scenario: 3-phase inverter stage in 1–3 kW HVAC blowers and pump controllers. IC Role / Device Role / Timing Role: High-side and low-side switching element in IGBT/MOSFET half-bridge modules driving BLDC motors. Use Value: 0.055 Ω RDS(on) and 390 mJ EAS reduce thermal stress during PWM commutation and motor stall conditions. | Use Scenario: Primary-side switch in 200–500 W telecom and server DC-DC bricks. IC Role / Device Role / Timing Role: Main power switch in active-clamp forward or LLC resonant converter topologies. Use Value: Fast 35 ns fall time and low Qg minimize switching losses at 200–500 kHz operation, improving full-load efficiency by ≥1.2%. |
| Solar Inverters | Uninterruptible Power Supplies |
Use Scenario: MPPT boost stage in string inverters handling 600–1000 V DC input. IC Role / Device Role / Timing Role: Synchronous rectifier and high-voltage switch in interleaved boost converters. Use Value: 150 V VDS rating provides headroom for 1000 V DC bus transients; 120 ns trr enables zero-voltage switching assist. | Use Scenario: Battery charging and inverter H-bridge in 1–3 kVA online UPS systems. IC Role / Device Role / Timing Role: Bidirectional power switch in dual-active-bridge isolation stage and battery interface. Use Value: Rugged avalanche rating ensures reliable operation during AC line dropouts and battery overvoltage faults without desaturation protection circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP14NK50ZFP | 500 V VDS, 14 A ID, RDS(on) = 0.38 Ω - higher voltage rating but lower current and higher on-resistance | Better suited for 400 V DC bus flyback converters; not recommended for 43 A continuous motor drive | Select only when 500 V blocking is mandatory and peak current stays below 18 A. |
| IXTH30N20P | 200 V VDS, 30 A ID, RDS(on) = 0.065 Ω - tighter voltage margin but comparable on-resistance and gate charge | Valid for 160 V DC bus applications like servo drives; lacks IRF3415S's 390 mJ EAS rating | Prefer for space-constrained 200 V systems where avalanche robustness is secondary to footprint reduction. |
Compared with STP14NK50ZFP and IXTH30N20P, IRF3415S uniquely balances 150 V rating, 43 A current, 0.055 Ω on-resistance, and 390 mJ avalanche energy - making it optimal for industrial 120–150 V bus motor drives and high-current DC-DC stages where thermal and fault robustness are co-critical.
Availability
IRF3415S is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and uninterruptible power supplies requiring stable component supply across multi-year production cycles.
Supply support for IRF3415S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The IRF3415S belongs to the HEXFET® Power MOSFET product line, engineered for high-current, high-reliability switching in industrial power conversion and motor control applications where thermal stability and avalanche ruggedness are design-critical.
FAQ
Is IRF3415S pin-compatible with IRF3205?
No. IRF3415S uses TO-262 (I²PAK) package with drain-connected tab, while IRF3205 uses TO-220AB with isolated tab. Pin spacing, thermal pad layout, and mounting hole positions differ - mechanical redesign is required for substitution.
What is the maximum safe operating temperature for continuous operation?
The IRF3415S has a junction temperature limit of 175°C. For continuous 43 A operation, case temperature must remain ≤75°C using a 0.5°C/W heatsink under natural convection, or ≤100°C with forced airflow (3 m/s) and 1.2°C/W thermal resistance.
Does IRF3415S require a gate driver IC?
Yes. With 71 nC gate charge and 10 V threshold, direct microcontroller GPIO drive is insufficient. A dedicated gate driver (e.g., IR2110, UCC27531) is required to achieve full 43 A current capability and avoid slow turn-on that causes thermal runaway during switching transitions.
Can IRF3415S be used in parallel configurations?
Yes, but with strict layout controls: matched gate resistors (≤1 Ω tolerance), symmetrical power and ground paths, and individual Kelvin-source connections to ensure current sharing. Thermal coupling between devices must be minimized to prevent thermal runaway above 30 A per device.
IRF3415S Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 42mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 200 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2400 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 200W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRF3415S FAQ
1.How can I place an order for IRF3415S through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF3415S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF3415S reliable?
The price and inventory of IRF3415S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3415S is usually 5 days.
3.What payment methods are accepted for IRF3415S?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3415S transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF3415S?
IRF3415S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF3415S order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF3415S?
For technical support, including IRF3415S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3415S requirements.
6.How does Aetrix verify that IRF3415S is sourced from the original manufacturer or authorized distributors?
All IRF3415S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3415S meets industry standards.
7.What is the process for return or replacement of IRF3415S?
All IRF3415S units undergo pre-shipment inspection (PSI). If there is an issue with IRF3415S, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF3415S part is unused and in its original packaging.
Return procedure for IRF3415S:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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