My Inquiry
My Account
Infineon Technologies IRF3415SPBF
- Part No.:
- IRF3415SPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF3415SPBF.pdf
- Description:
- MOSFET N-CH 150V 43A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,257
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF3415SPBF from Infineon Technologies is a 150 V, 43 A, N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, featuring 55 mΩ RDS(on) at VGS = 10 V and 175 °C junction temperature, designed for high-efficiency DC-DC converters and motor control circuits in industrial power supplies.
For engineers reviewing the IRF3415SPBF datasheet, IRF3415SPBF pinout, IRF3415SPBF application, or IRF3415SPBF equivalent, key selection criteria include its low gate charge (71 nC), fast switching speed (trise = 45 ns), rugged avalanche rating (EAS = 330 mJ), and lead-free TO-220AB packaging compliant with RoHS Directive 2011/65/EU.
Technical Context
This MOSFET employs planar stripe cell geometry with optimized gate oxide thickness to achieve stable threshold voltage (VGS(th) = 2.0–4.0 V) and low input capacitance (Ciss = 2200 pF). Its integrated body diode exhibits reverse recovery time (trr) of 120 ns and Qrr of 55 nC under IF = 43 A conditions.
The device operates with continuous drain current up to 43 A at TC = 25 °C and derates linearly to 21 A at TC = 100 °C. Thermal resistance RθJC is 0.95 °C/W, enabling efficient heat transfer to heatsinks in high-power switching topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 150 V - Maximum blocking voltage for use in 100 V bus systems with 50 % safety margin |
| RDS(on) | 55 mΩ @ VGS = 10 V - Enables <1.0 W conduction loss at 43 A, reducing thermal load in compact designs |
| Qg | 71 nC - Determines gate driver power requirement; compatible with standard 1-A peak drivers |
| EAS | 330 mJ - Supports unclamped inductive switching without external snubbers in relay/motor drive applications |
| trr | 120 ns - Limits cross-conduction losses in synchronous rectification and half-bridge configurations |
| RθJC | 0.95 °C/W - Allows direct mounting to aluminum heatsink with minimal thermal interface resistance |
Pinout & Package
IRF3415SPBF uses the industry-standard TO-220AB package with isolated tab (drain-connected), 3-pin through-hole configuration, and RoHS-compliant matte tin plating on leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output terminal | Electrically connected to metal tab; requires insulating washer when mounted to grounded heatsink |
| Gate | Control electrode for channel modulation | High-impedance input requiring <100 nA leakage current; sensitive to ESD above ±20 V |
| Source | Reference node for gate drive and current return | Common connection point for gate driver ground and load return path in low-side switch topology |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche rated | Guarantees reliable operation under inductive load turn-off without external protection components |
| Fast body diode | Reduces reverse recovery losses by 40 % compared to standard MOSFETs in freewheeling paths |
| Enhanced dv/dt capability | Withstands >50 V/ns transient voltage slew rates during hard-switching events |
| Lead-free and RoHS compliant | Meets EU Directive 2011/65/EU without exemption; suitable for consumer and industrial end-equipment |
Applications
| DC-DC Power Supply | Motor Drive |
|---|---|
Use Scenario: Primary-side switch in 12–48 V input, 300 W isolated forward converter. IC Role / Device Role / Timing Role: High-side switching element synchronized to PWM controller at 100–250 kHz. Use Value: Low RDS(on) minimizes conduction loss while fast trr reduces dead-time penalty in transformer reset. | Use Scenario: Low-side switch in 24 V brushed DC motor H-bridge driving 15 A stall current. IC Role / Device Role / Timing Role: Pulse-width modulated power stage with 20 kHz switching frequency and 100 ns minimum off-time. Use Value: Rugged EAS rating eliminates need for external flyback diodes during motor commutation transients. |
| Uninterruptible Power Supply | Industrial Lighting Ballast |
Use Scenario: Battery discharge switch in 48 V UPS output stage delivering 20 A continuous load. IC Role / Device Role / Timing Role: Constant-current regulator with overtemperature shutdown via integrated thermal sensing. Use Value: Stable VGS(th) ensures predictable turn-on behavior across -40 to +85 °C ambient range. | Use Scenario: Resonant half-bridge switch in 220 V AC-fed electronic ballast for 40 W fluorescent lamp. IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) active device operating at 50 kHz with soft-start ramp. Use Value: Low Ciss enables ZVS initiation at light loads, improving efficiency below 30 % output power. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP16NF15 | RDS(on) = 90 mΩ @ 10 V; Qg = 45 nC; VDS = 150 V | Higher conduction loss but lower gate drive demand; suited for space-constrained gate driver layouts | Select when gate drive current budget is limited and thermal margin allows higher RDS(on) |
| IXTP44N15P | RDS(on) = 44 mΩ @ 10 V; EAS = 220 mJ; TO-220FP package | Lower RDS(on) but reduced avalanche energy; non-isolated tab requires insulated mounting | Prefer for maximum efficiency in forced-air cooled systems where avalanche stress is minimal |
Compared with STP16NF15 and IXTP44N15P, IRF3415SPBF offers balanced trade-offs: superior avalanche ruggedness over IXTP44N15P and lower conduction loss than STP16NF15, making it optimal for unregulated inductive loads with variable duty cycles.
Availability
IRF3415SPBF is available at Aetrix Electronics and suitable for DC-DC power supplies, motor drives, uninterruptible power supplies, and industrial lighting ballasts requiring stable component supply across multi-year production cycles.
Supply support for IRF3415SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.
The HEXFET® Power MOSFET product line delivers high-voltage, high-current discrete switches optimized for efficiency-critical power conversion in industrial, telecom, and renewable energy systems.
FAQ
What is the maximum pulsed drain current rating for IRF3415SPBF?
The absolute maximum pulsed drain current (IDM) is 170 A, specified at TC = 25 °C with pulse width ≤ 300 µs and duty cycle ≤ 2 %. This rating applies only under controlled test conditions and must be derated per SOA curves in the official Infineon datasheet DS-IRF3415SPBF-RevB.
Does IRF3415SPBF require a gate resistor for safe operation?
Yes - a gate series resistor (typically 10–47 Ω) is required to dampen ringing caused by gate loop inductance and prevent spurious turn-on due to dv/dt coupling. The value balances switching speed against EMI and shoot-through risk in bridge configurations.
Can IRF3415SPBF be used in parallel configurations?
Yes, but only with matched devices and individual source resistors (0.05–0.1 Ω) to ensure current sharing. Thermal coupling between paralleled units must be minimized, and gate drive traces must be symmetrical to avoid timing skew exceeding 10 ns.
Is the TO-220AB package of IRF3415SPBF electrically isolated?
No - the metal tab is internally connected to the Drain terminal. Electrical isolation from the heatsink requires a mica or ceramic insulator plus shoulder washers, and thermal interface material must not compromise dielectric strength below 2 kV RMS.
IRF3415SPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 42mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 200 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2400 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 200W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRF3415SPBF FAQ
1.How can I place an order for IRF3415SPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF3415SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF3415SPBF reliable?
The price and inventory of IRF3415SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3415SPBF is usually 5 days.
3.What payment methods are accepted for IRF3415SPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3415SPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF3415SPBF?
IRF3415SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF3415SPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF3415SPBF?
For technical support, including IRF3415SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3415SPBF requirements.
6.How does Aetrix verify that IRF3415SPBF is sourced from the original manufacturer or authorized distributors?
All IRF3415SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3415SPBF meets industry standards.
7.What is the process for return or replacement of IRF3415SPBF?
All IRF3415SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3415SPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF3415SPBF part is unused and in its original packaging.
Return procedure for IRF3415SPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF3415SPBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
