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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3415STRR

Name: IRF3415STRR
Brand: Infineon Technologies
SKU: IRF3415STRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3415STRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF3415STRR.pdf

Description:: MOSFET N-CH 150V 43A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:9,476

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Product details

Overview

IRF3415STRR from Infineon Technologies is a 150 V, 43 A, N-channel enhancement-mode HEXFET® Power MOSFET in TO-263 (D²PAK) package, with R_DS(on) = 42 mΩ at V_GS = 10 V and 32 A, 100% avalanche-rated, designed for high-efficiency DC-DC converters and motor control in industrial power supplies.

For engineers reviewing the IRF3415STRR datasheet, IRF3415STRR pinout, IRF3415STRR application, or IRF3415STRR equivalent, key selection criteria include its 150 V blocking voltage, low gate charge (Q_g = 71 nC), fast switching capability (t_f = 55 ns), and surface-mount D²PAK thermal performance for high-current switching nodes.

Technical Context

This MOSFET employs planar stripe cell structure and optimized gate oxide for stable operation under repetitive avalanche stress. Its threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V at 250 µA, enabling compatibility with 3.3 V and 5 V logic-level gate drivers.

The device features integrated ESD protection (HBM > 2 kV), specified maximum junction temperature of 175 °C, and guaranteed unclamped inductive switching (UIS) energy rating of 390 mJ at T_J = 25 °C - critical for robustness in flyback and half-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - supports 120 VAC rectified bus and 48 V industrial systems with margin
I_D (continuous)	43 A @ T_C = 25 °C - enables high-current output stages without parallel devices
R_DS(on)	42 mΩ @ V_GS = 10 V - reduces conduction loss in 12–48 V switch-mode power supplies
Q_g	71 nC - allows efficient 100–500 kHz switching with standard gate drivers
t_f	55 ns - minimizes switching transition losses in hard-switched converters
E_AS	390 mJ - ensures reliable operation during inductive load turn-off transients

Pinout & Package

TO-263 (D²PAK) surface-mount package with copper leadframe, exposed drain pad for enhanced thermal dissipation. Standard 3-pin configuration: Gate (G), Drain (D), Source (S).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate terminal	Controls channel conduction; requires ≤ ±20 V gate-source voltage per datasheet absolute max ratings
D	Drain terminal	High-side switching node; electrically connected to exposed metal pad for thermal and electrical grounding
S	Source terminal	Reference node for gate drive; forms return path for load current and gate driver loop

Key Features

Feature	Design Value
100% UIS tested	Guarantees survival under worst-case inductive turn-off without external snubbers
Lead-free and RoHS compliant	Meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) for reflow assembly
Low gate charge (Q_g)	Reduces driver power loss and enables use of cost-effective SOT-23 gate drivers
Enhanced body diode dV/dt immunity	Prevents false turn-on in high-dV/dt half-bridge configurations (≥ 4.5 V/ns)

Applications

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: 3-phase BLDC motor inverter stage operating at 20–40 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side N-channel power switch in 6-pack IGBT/MOSFET module replacement.

Use Value: 42 mΩ R_DS(on) and 390 mJ E_AS enable compact heatsink design and eliminate need for external freewheeling diodes.

Use Scenario: Active clamp forward or LLC resonant converter primary-side switch in 1U server power supply.

IC Role / Device Role / Timing Role: Main switching element handling 30–50 A peak drain current at 300–500 kHz.

Use Value: Low Q_g (71 nC) and fast t_f (55 ns) reduce gate drive loss and improve ZVS boundary in resonant topologies.

Solar Microinverter DC-DC Stage

EV Onboard Charger PFC Switch

Use Scenario: Boost converter switching transistor in 300–600 V DC input stage of residential solar microinverter.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in interleaved boost architecture.

Use Value: 150 V V_DS provides sufficient margin over 400 V nominal bus, while MSL1 rating supports automated SMT manufacturing.

Use Scenario: Boost PFC switch in 6.6 kW single-phase onboard charger for light-duty EVs.

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) or continuous conduction mode (CCM) switching device.

Use Value: Guaranteed avalanche ruggedness prevents failure during line surge events and grid transient conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP150N10F7	100 V V_DS, lower R_DS(on) (3.8 mΩ), higher I_D (150 A), but insufficient for 400 V bus applications	Restricted to ≤ 80 V DC systems; unsuitable for 150 V+ rectified inputs	Select only when system bus voltage remains below 80 V and higher current density is required
IXFH40N15X3	150 V V_DS, higher R_DS(on) (48 mΩ), lower Q_g (52 nC), faster t_r/t_f	Better suited for ultra-high-frequency (>1 MHz) resonant converters where gate loss dominates	Prefer when optimizing for 1–2 MHz operation and gate drive efficiency over conduction loss

Compared with STP150N10F7 and IXFH40N15X3, IRF3415STRR offers optimal balance of 150 V rating, 42 mΩ conduction resistance, and 71 nC gate charge for 100–500 kHz industrial power conversion - making it uniquely suitable for 48–400 V bus applications requiring both avalanche ruggedness and thermal reliability.

Availability

IRF3415STRR is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, solar microinverters, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for IRF3415STRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line delivers high-voltage, high-current switching solutions optimized for efficiency, ruggedness, and manufacturability in power conversion systems.

FAQ

What is the maximum safe operating junction temperature for IRF3415STRR?

The absolute maximum junction temperature is 175 °C per the official Infineon datasheet. Derating is required above 25 °C ambient; thermal design must ensure T_J stays within this limit under worst-case load, switching frequency, and PCB copper area conditions. The device's SOA curve defines safe operating limits for pulse and DC conditions.

Is IRF3415STRR compatible with 3.3 V logic-level gate drivers?

No - its typical V_GS(th) is 2.8 V with a range of 2.0–4.0 V, but full enhancement requires ≥10 V V_GS to achieve rated R_DS(on) of 42 mΩ. Using 3.3 V gate drive results in high on-resistance (>500 mΩ) and excessive conduction loss; a dedicated gate driver or level shifter is mandatory.

Does IRF3415STRR have an integrated body diode, and what are its characteristics?

Yes - it features a fast-recovery, avalanche-rated intrinsic body diode with reverse recovery time (t_rr) of 120 ns and Q_rr of 120 nC at I_F = 32 A. This diode supports synchronous rectification in low-side configurations but is not optimized for high-frequency freewheeling; external Schottky diodes are recommended for >200 kHz operation.

Can IRF3415STRR be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) enables inherent current sharing. However, layout symmetry (matched gate and source inductance), individual gate resistors (≥10 Ω), and thermal coupling between devices are essential. Parallel operation beyond two units requires careful SOA validation under transient conditions.

IRF3415STRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 43A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 42mOhm @ 22A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 200 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF3415STRR FAQ

1.How can I place an order for IRF3415STRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3415STRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3415STRR reliable?

The price and inventory of IRF3415STRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3415STRR is usually 5 days.

3.What payment methods are accepted for IRF3415STRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3415STRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3415STRR?

IRF3415STRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3415STRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3415STRR?

For technical support, including IRF3415STRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3415STRR requirements.

6.How does Aetrix verify that IRF3415STRR is sourced from the original manufacturer or authorized distributors?

All IRF3415STRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3415STRR meets industry standards.

7.What is the process for return or replacement of IRF3415STRR?

All IRF3415STRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF3415STRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3415STRR part is unused and in its original packaging.

Return procedure for IRF3415STRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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