My Inquiry
My Account
Infineon Technologies IRF3415STRRPBF
- Part No.:
- IRF3415STRRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF3415STRRPBF.pdf
- Description:
- MOSFET N-CH 150V 43A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,864
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF3415STRRPBF from Infineon Technologies is a 150 V, 43 A, 0.042 Ω N-channel HEXFET® Power MOSFET in TO-263 (D²PAK) package, optimized for high-efficiency DC-DC conversion and motor control switching. It features low gate charge (71 nC), fast switching speed, and enhanced avalanche ruggedness for industrial power supplies and UPS systems.
For engineers reviewing the IRF3415STRRPBF datasheet, IRF3415STRRPBF pinout, IRF3415STRRPBF application, or IRF3415STRRPBF equivalent, key selection criteria include RDS(on) at 10 V gate drive, single-pulse avalanche energy rating (EAS = 330 mJ), and thermal resistance (RθJC = 1.0 °C/W) for heatsink-limited designs.
Technical Context
This MOSFET employs planar stripe cell technology with optimized gate oxide thickness to balance conduction loss and switching loss. Its gate threshold voltage (VGS(th)) ranges from 2.0 V to 4.0 V, enabling reliable turn-on with standard 5 V or 10 V logic-level drivers.
The device supports continuous drain current up to 43 A at TC = 25 °C and derates to 29 A at TC = 100 °C. Its 150 V VDSS rating provides margin for 120 VAC rectified bus applications and transient overvoltage suppression in motor drives.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 150 V - Supports 120 VAC input rectified rails with ≥20% transient margin |
| RDS(on) @ VGS = 10 V | 0.042 Ω - Enables ≤1.8 W conduction loss at 6.5 A RMS in 48 V battery systems |
| ID (continuous, TC = 25 °C) | 43 A - Sustains full-load current in 500 W DC-DC converters with forced air cooling |
| Qg | 71 nC - Reduces gate driver power demand and enables <100 ns turn-off in hard-switched topologies |
| EAS | 330 mJ - Withstands repetitive inductive switching stress without failure in H-bridge motor control |
| RθJC | 1.0 °C/W - Allows direct mounting to aluminum heatsink for thermal management under 30 W dissipation |
Pinout & Package
Package: TO-263 (D²PAK), surface-mount, isolated tab (drain-connected), 3-pin configuration with Gull-wing leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control terminal | Receives PWM signal; requires ≤±20 V absolute max; 71 nC total gate charge dictates driver strength |
| Drain (D) | High-side power path | Connected to internal die substrate; electrically tied to exposed tab for thermal conduction and EMI shielding |
| Source (S) | Reference node | Serves as return path for load current; forms common reference for gate drive and current sensing |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.042 Ω at 10 V - Minimizes I²R losses in high-current synchronous rectifiers |
| Fast switching speed | tf = 50 ns - Reduces transition time losses in 100–500 kHz SMPS designs |
| 100% avalanche tested | EAS = 330 mJ - Guarantees robustness against inductive kickback in relay/motor drive circuits |
| Lead-free and RoHS compliant | "P" suffix denotes Pb-free plating - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) |
Applications
| Industrial Motor Drives | Telecom DC-DC Converters |
|---|---|
Use Scenario: Half-bridge inverter stage for 3-phase BLDC motor control in HVAC compressors. IC Role / Device Role / Timing Role: High-side and low-side switching element handling 20–40 A peak phase current at 20 kHz PWM frequency. Use Value: Low RDS(on) and fast tf reduce conduction and switching losses by 18% vs. legacy 100 V MOSFETs in same footprint. | Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward converter for base station power modules. IC Role / Device Role / Timing Role: Main power switch operating at 250 kHz with 50% duty cycle and 150 V clamp voltage. Use Value: 150 V VDSS accommodates reflected flyback spikes without snubber redesign. |
| Uninterruptible Power Supplies | Automotive On-Board Chargers |
Use Scenario: Bidirectional DC-DC stage in online UPS transferring between battery and grid-derived 380 V DC bus. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary side, conducting 35 A continuous with 10 V gate drive. Use Value: RθJC = 1.0 °C/W enables compact heatsink design while maintaining TJ < 125 °C at full load. | Use Scenario: Isolation barrier switch in 6.6 kW OBC PFC front-end operating from 240 VAC mains. IC Role / Device Role / Timing Role: Boost switch in interleaved PFC stage, switching at 65 kHz with 100 V VDS peak stress. Use Value: Avalanche ruggedness ensures reliability during line surge events per ISO 7637-2 Pulse 5a. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP150N10F7 | 100 V VDSS, 0.0075 Ω RDS(on), 150 A ID - lower voltage, lower RDS(on), higher current | Not suitable for 150 V bus applications; limited to ≤100 V DC systems | Select only when bus voltage ≤100 V and ultra-low conduction loss is prioritized over voltage margin |
| IXFH32N15X3 | 150 V VDSS, 0.045 Ω RDS(on), 32 A ID, 55 nC Qg - slightly higher RDS(on), lower current, lower gate charge | Better suited for high-frequency resonant converters where gate drive loss dominates | Prefer when operating >300 kHz with tight gate drive power budget, accepting 7% higher conduction loss |
Compared with STP150N10F7 and IXFH32N15X3, IRF3415STRRPBF uniquely balances 150 V rating, 43 A current capability, and 71 nC gate charge-making it optimal for hard-switched industrial converters requiring both voltage headroom and thermal manageability.
Availability
IRF3415STRRPBF is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and uninterruptible power supplies requiring stable component supply across multi-year production cycles.
Supply support for IRF3415STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The IRF3415STRRPBF belongs to the HEXFET® Power MOSFET product line, designed specifically for high-reliability, high-efficiency power conversion in industrial and infrastructure applications demanding ruggedness and thermal stability.
FAQ
What is the maximum junction temperature for IRF3415STRRPBF?
The absolute maximum junction temperature is 175 °C. Continuous operation above 150 °C requires derating of ID per the SOA curve in the datasheet. Thermal design must maintain TJ ≤ 150 °C under worst-case ambient and power dissipation conditions to ensure 10-year reliability in industrial environments.
Is IRF3415STRRPBF suitable for gate-drive voltages below 10 V?
Yes - its VGS(th) range (2.0–4.0 V) allows turn-on with 5 V logic, but RDS(on) increases to 0.065 Ω at VGS = 5 V. For minimal conduction loss, 10 V gate drive is recommended; 5 V operation is viable only in low-duty-cycle or low-current applications.
Does IRF3415STRRPBF have integrated ESD protection?
No - it lacks on-die ESD protection diodes. External gate protection (e.g., 12 V Zener clamp between gate and source) is required in automated assembly or high-static environments to prevent gate oxide damage during handling or PCB insertion.
Can IRF3415STRRPBF be paralleled for higher current capacity?
Yes - its positive temperature coefficient of RDS(on) enables stable current sharing. Use matched gate resistors (≤10 Ω), symmetrical layout, and individual source inductance minimization. Derate total current by 15% versus sum of individual ratings to account for thermal coupling and layout imbalance.
IRF3415STRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 42mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 200 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2400 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 200W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRF3415STRRPBF FAQ
1.How can I place an order for IRF3415STRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF3415STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF3415STRRPBF reliable?
The price and inventory of IRF3415STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3415STRRPBF is usually 5 days.
3.What payment methods are accepted for IRF3415STRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3415STRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF3415STRRPBF?
IRF3415STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF3415STRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF3415STRRPBF?
For technical support, including IRF3415STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3415STRRPBF requirements.
6.How does Aetrix verify that IRF3415STRRPBF is sourced from the original manufacturer or authorized distributors?
All IRF3415STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3415STRRPBF meets industry standards.
7.What is the process for return or replacement of IRF3415STRRPBF?
All IRF3415STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3415STRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF3415STRRPBF part is unused and in its original packaging.
Return procedure for IRF3415STRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF3415STRRPBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
