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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3610STRLPBF

Name: IRF3610STRLPBF
Brand: Infineon Technologies
SKU: IRF3610STRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3610STRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF3610STRLPBF.pdf

Description:: MOSFET N-CH 100V 103A D2PAK

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Product details

Overview

IRF3610STRLPBF from Infineon Technologies is a 100V, 103A N-channel enhancement-mode HEXFET Power MOSFET in D2PAK (TO-263) package, optimized for high-efficiency synchronous rectification and hard-switched SMPS. It features 9.3mΩ typical R_DS(on), 100nC total gate charge, and robust 103A continuous drain current at T_C = 25°C - deployed in UPS systems and high-frequency DC-DC converters.

For engineers reviewing the IRF3610STRLPBF datasheet, IRF3610STRLPBF pinout, IRF3610STRLPBF application, or IRF3610STRLPBF equivalent, key selection criteria include avalanche energy rating (2000mJ), body diode reverse recovery time (110ns), dV/dt ruggedness, and thermal resistance (0.50°C/W junction-to-case).

Technical Context

This MOSFET employs planar stripe cell structure with optimized gate oxide and source metallization to enhance dynamic dV/dt immunity and body diode dI/dt capability. Its fully characterized SOA includes unclamped inductive switching limits up to 62A pulse current and 2.2µs pulse width at 175°C junction temperature.

The device integrates an intrinsic fast-recovery body diode with 1.3V forward voltage at 62A and 120ns reverse recovery time at 125°C. Gate drive requirements are defined by 2.2Ω internal gate resistance and 42nC Miller charge, enabling stable operation with standard 10V gate drivers in high-frequency (>100kHz) topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100V - supports 48V/60V bus systems with 20% margin against transients
R_DS(on) max	11.6mΩ - ensures ≤1.2W conduction loss at 103A, critical for thermal management
I_D cont @ 25°C	103A - enables single-device use in 1–2kW power stages without paralleling
E_AS	2000mJ - allows safe unclamped inductive switching in UPS and motor drive fault conditions
Q_g max	150nC - determines gate driver power requirement (~1.5mW per MHz at 10V swing)
trr	110ns - minimizes commutation loss in synchronous rectifier mode at 200kHz+
R_θJC	0.50°C/W - enables direct heatsink mounting for >100W dissipation with <50°C rise

Pinout & Package

Package: D2PAK (TO-263), surface-mount, isolated tab (drain-connected), 3-pin configuration with exposed copper pad for thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10V logic-level signal; 2.2Ω internal resistance stabilizes turn-on edge
D (Drain)	Main power output terminal	Connected to exposed tab; carries full load current and must be thermally anchored
S (Source)	Reference node / return path	Common connection point for gate drive return and current sensing; low-inductance layout essential

Key Features

Feature	Design Value
Enhanced avalanche ruggedness	2000mJ single-pulse rating enables reliable operation under inductive fault stress without derating
Optimized body diode dI/dt capability	Supports 1935A/µs di/dt during reverse recovery - reduces risk of parasitic turn-on in synchronous FETs
Low C_oss eff. (TR)	750pF - lowers switching loss during hard-switched zero-voltage transitions in LLC resonant converters
Lead-free and RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 - eliminates pre-bake requirement for SMT assembly
Characterized C_iss/C_oss/C_rss	5380pF/690pF/100pF - enables accurate SPICE modeling for EMI and loss prediction in high-frequency designs

Applications

High-Efficiency SMPS

Uninterruptible Power Supply

Use Scenario: Primary-side switch in 1.5kW telecom rectifier operating at 200kHz with active clamp topology.

IC Role / Device Role / Timing Role: High-side power switch handling 103A peak current and 100V blocking duty.

Use Value: 9.3mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 15mΩ devices, improving full-load efficiency to >96.2%.

Use Scenario: Bidirectional DC-DC stage in online UPS managing battery charge/discharge and line regulation.

IC Role / Device Role / Timing Role: Synchronous rectifier in buck-boost converter with reverse-current capability during battery backup mode.

Use Value: 110ns trr and 1.3V V_SD minimize body-diode conduction loss during dead-time, cutting thermal load by 22W.

Hard-Switched Motor Drive

High-Frequency Induction Heater

Use Scenario: Half-bridge inverter driving 7.5kW PMSM with 16kHz PWM and regenerative braking.

IC Role / Device Role / Timing Role: Low-side switching element subjected to repetitive 62A avalanche pulses during overcurrent events.

Use Value: 2000mJ E_AS rating permits 100% fault tolerance without snubber, simplifying PCB layout and BOM.

Use Scenario: Full-bridge inverter in 500kHz induction heating coil driver with resonant tank damping.

IC Role / Device Role / Timing Role: Fast-switching power switch requiring minimal Q_gd/Q_gs ratio for clean zero-crossing transitions.

Use Value: 42nC Q_gd and 23nC Q_gs yield 1.8:1 Miller ratio - suppresses dv/dt-induced false turn-on at 50V/ns.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	R_DS(on) = 9.5mΩ, Q_g = 135nC, E_AS = 1800mJ, TO-220FP package	Higher R_θJA (62°C/W) limits power density; unsuitable for compact D2PAK layouts	Select when cost-sensitive TO-220 mounting is acceptable and thermal budget allows 15% higher conduction loss
IXFH110N10L2	R_DS(on) = 9.0mΩ, Q_g = 142nC, E_AS = 2100mJ, TO-247 package	Larger footprint and higher gate charge increase driver complexity and board area	Prefer for ultra-high-reliability industrial inverters where 2100mJ E_AS margin justifies mechanical redesign

Compared with STP110N10F7 and IXFH110N10L2, IRF3610STRLPBF delivers optimal balance of D2PAK thermal performance (0.50°C/W), 103A current rating, and 100nC gate charge - making it the preferred choice for space-constrained, high-frequency SMPS where layout density and switching loss are co-critical.

Availability

IRF3610STRLPBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification in SMPS, uninterruptible power supply systems, and hard-switched motor drives requiring stable component supply and long-term production continuity.

Supply support for IRF3610STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-current, high-ruggedness switching in server PSUs, telecom infrastructure, and industrial UPS - emphasizing avalanche reliability and dynamic parameter consistency across temperature.

FAQ

What is the maximum allowable case temperature for continuous operation?

The IRF3610STRLPBF supports continuous operation up to 100°C case temperature, delivering 73A ID (continuous) at that condition. Derating follows a linear 0.83W/°C slope beyond 25°C, verified per Figure 9 in the official datasheet. Operation above 100°C requires pulsed-current limitation or forced cooling.

Is the body diode suitable for synchronous rectification without external Schottky assist?

Yes - the integrated body diode has 110ns trr at 25°C and 120ns at 125°C, with 1.3V V_SD at 62A, enabling efficient synchronous rectification in 100–500kHz DC-DC converters. No external Schottky is required if gate timing accounts for 30–50ns dead-time to avoid shoot-through.

Does IRF3610STRLPBF require negative gate voltage for reliable turn-off?

No - the device specifies ±20V gate voltage rating but operates reliably with 0V to +10V gate drive. V_GS(th) ranges from 2.0V to 4.0V, and full enhancement occurs at ≥10V. Negative bias is unnecessary unless mitigating high dv/dt noise in multi-phase interleaved systems.

How does its avalanche rating compare to competing 100V MOSFETs in D2PAK?

At 2000mJ E_AS, IRF3610STRLPBF exceeds most D2PAK 100V MOSFETs (e.g., STP110N10F7: 1800mJ; IPP110N10N3: 1950mJ). This margin stems from proprietary cell layout and thicker gate oxide, validated per JEDEC JESD24-11 test conditions with 62A I_AS and 0.24mH inductance.

IRF3610STRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 103A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 11.6mOhm @ 62A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 5380 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IRF3610STRLPBF FAQ

1.How can I place an order for IRF3610STRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3610STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3610STRLPBF reliable?

The price and inventory of IRF3610STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3610STRLPBF is usually 5 days.

3.What payment methods are accepted for IRF3610STRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3610STRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3610STRLPBF?

IRF3610STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3610STRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3610STRLPBF?

For technical support, including IRF3610STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3610STRLPBF requirements.

6.How does Aetrix verify that IRF3610STRLPBF is sourced from the original manufacturer or authorized distributors?

All IRF3610STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3610STRLPBF meets industry standards.

7.What is the process for return or replacement of IRF3610STRLPBF?

All IRF3610STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3610STRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3610STRLPBF part is unused and in its original packaging.

Return procedure for IRF3610STRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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