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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3704PBF

Name: IRF3704PBF
Brand: Infineon Technologies
SKU: IRF3704PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3704PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF3704PBF.pdf

Description:: MOSFET N-CH 20V 77A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF3704PBF from Infineon Technologies is a 20V, 77A, 9.0mΩ N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-frequency synchronous rectification in isolated DC-DC converters and buck regulators for telecom and industrial power supplies.

For engineers reviewing the IRF3704PBF datasheet, IRF3704PBF pinout, IRF3704PBF application, or IRF3704PBF equivalent, key selection criteria include R_DS(on) at 4.5V/10V gate drive, avalanche energy rating (216 mJ), diode reverse recovery performance (Q_rr = 45–75 nC), and thermal resistance (R_θJC = 1.73°C/W).

Technical Context

This MOSFET employs planar silicon HEXFET architecture with fully characterized unclamped inductive switching (UIS) capability and integrated body diode optimized for low Q_rr and fast t_rr (38–62 ns). It supports gate drive voltages from 4.5V to 10V with V_GS(th) of 1.0–3.0V.

Designed for hard-switched topologies, it delivers ultra-low gate impedance and dynamic parameters including Q_g = 19 nC, Q_gd = 6.4 nC, and C_iss = 1996 pF at V_DS = 0V - enabling efficient operation in 300 kHz–1 MHz DC-DC stages with minimal switching loss.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 12V input rails and transient margin in telecom systems
R_DS(on) max @ V_GS = 10V	9.0 mΩ - Enables <1W conduction loss at 77A continuous drain current (T_C = 25°C)
I_D continuous @ T_C = 25°C	77 A - Supports high-current output stages without parallel devices in 50–100W isolated converters
E_AS	216 mJ - Confirmed single-pulse avalanche energy rating ensures robustness during load dump or short-circuit events
Q_rr @ T_J = 25°C	45–68 nC - Low reverse recovery charge reduces cross-conduction loss in synchronous rectifier configurations
R_θJC	1.73 °C/W - Enables direct heatsink mounting for thermal management in space-constrained industrial SMPS
t_r/t_f	98 ns / 5.0 ns - Fast switching transitions minimize dead-time losses in high-frequency PWM control

Pinout & Package

IRF3704PBF is housed in a through-hole TO-220AB package with exposed drain tab for thermal and electrical connection. The lead assignment is standardized per JEDEC outline: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, Pin 4 = Drain (dual-drain configuration).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives gate drive signal; requires ≤10V logic-level compatibility and low-impedance driver due to Q_g = 19 nC
2 (Drain)	High-side power node	Electrically and thermally connected to heatsink; carries full load current and withstands 20V breakdown
3 (Source)	Reference node / return path	Serves as local ground reference for gate drive; connects to low-side switch or controller sense point
4 (Drain)	Secondary drain connection	Parallel drain path to reduce package inductance and improve current sharing in high-di/dt applications

Key Features

Feature	Design Value
Ultra-low R_DS(on)	9.0 mΩ @ 10V enables >95% efficiency in 12V-input, 3.3V/50A output buck converters
Fully characterized avalanche	216 mJ E_AS rating validated per JEDEC JESD24-1, eliminating need for external snubbers in flyback designs
Optimized body diode	Q_rr = 45–75 nC and t_rr = 38–62 ns support zero-voltage switching (ZVS) in resonant topologies
Lead-free construction	Pb-free plating and RoHS-compliant materials meet IPC-J-STD-020 moisture sensitivity level 1 (MSL1)

Applications

Telecom DC-DC Converters

Industrial Buck Regulators

Use Scenario: Primary-side synchronous rectifier in 48V-to-12V isolated forward converters for base station power modules.

IC Role / Device Role / Timing Role: High-side power switch operating at 300–500 kHz with gate-driven body diode conduction during dead time.

Use Value: 9.0 mΩ R_DS(on) and 216 mJ avalanche rating ensure stable operation under line transients and partial-load conditions.

Use Scenario: Main switch in high-current 24V-to-5V/3.3V buck converters powering PLC I/O modules and motor drivers.

IC Role / Device Role / Timing Role: Low-side switching element controlled by integrated PMIC with 4.5V gate drive capability.

Use Value: 77A continuous current rating and 1.73°C/W R_θJC allow single-device solution without derating at 70°C ambient.

Server VRMs

Industrial Motor Control

Use Scenario: Phase-leg high-side switch in multiphase CPU voltage regulator modules (VRMs) with 300–600 kHz switching frequency.

IC Role / Device Role / Timing Role: Fast-turning MOSFET with Q_gd/Q_g ratio of 0.34 enabling precise duty-cycle control and reduced shoot-through risk.

Use Value: 6.4 nC Miller charge and 98 ns rise time support tight PWM timing margins in digital VRM controllers.

Use Scenario: Half-bridge leg in 24V BLDC motor gate driver boards for factory automation actuators.

IC Role / Device Role / Timing Role: Low-R_DS(on) power switch handling 40A peak phase current with integrated body diode freewheeling.

Use Value: 0.88V V_SD at 35.5A and 25°C minimizes freewheeling loss during PWM commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	R_DS(on) = 20 mΩ @ 10V; V_DS = 200V; Q_g = 25 nC	Higher voltage rating but double R_DS(on); unsuitable for 20V rail optimization	Select only if higher V_DS margin is required and conduction loss budget allows +110% increase
IXTP26N20P	R_DS(on) = 11.5 mΩ @ 10V; TO-220FP package; R_θJC = 2.5°C/W	Same voltage class but higher thermal resistance limits power density in compact heatsinks	Prefer when footprint compatibility with TO-220AB is not required and lower gate charge (16 nC) is prioritized

Compared with STP20NM20 and IXTP26N20P, IRF3704PBF offers the lowest R_DS(on) and best thermal resistance in TO-220AB, making it optimal for space- and efficiency-critical 20V synchronous rectifiers where gate drive is ≥4.5V.

Availability

IRF3704PBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial buck regulators, and server VRMs requiring stable component supply and long-term production continuity.

Supply support for IRF3704PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET Power MOSFET product line targets high-efficiency switching power conversion, with IRF3704PBF engineered specifically for low-voltage, high-current synchronous rectification in isolated and non-isolated SMPS topologies.

FAQ

Is IRF3704PBF suitable for 3.3V gate drive?

No - IRF3704PBF has a gate threshold voltage range of 1.0–3.0V, but its R_DS(on) rises sharply below 4.5V: 9.8–13.5 mΩ at V_GS = 4.5V versus 6.3–9.0 mΩ at 10V. For reliable 3.3V logic-level operation, consider dedicated logic-level MOSFETs like IRLB8721PBF instead.

What is the maximum safe operating temperature for continuous operation?

The junction temperature must not exceed +175°C, and continuous operation at rated 77A requires case temperature ≤25°C. At T_C = 70°C, the derated continuous current is 64A. Thermal design must maintain R_θJA ≤40°C/W on PCB mount or use heatsink to limit R_θJC + R_θCS + R_θSA ≤ (175 − T_A) / P_D.

Does IRF3704PBF have avalanche ruggedness for inductive load switching?

Yes - it is fully characterized for unclamped inductive switching (UIS) with E_AS = 216 mJ at T_J = 25°C. This rating is validated per JEDEC JESD24-1 and supports reliable operation in flyback, forward, and LLC converters without external clamping circuits under defined pulse conditions.

Can IRF3704PBF be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (see Fig 4) enables inherent current sharing. However, layout symmetry, matched gate drive impedance (<1.8Ω), and individual source inductance balancing are required. Derate total current by 15% for two devices and 25% for three or more to account for thermal coupling and parameter spread.

IRF3704PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 77A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1996 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 87W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF3704PBF FAQ

1.How can I place an order for IRF3704PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3704PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3704PBF reliable?

The price and inventory of IRF3704PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3704PBF is usually 5 days.

3.What payment methods are accepted for IRF3704PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3704PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3704PBF?

IRF3704PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3704PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3704PBF?

For technical support, including IRF3704PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3704PBF requirements.

6.How does Aetrix verify that IRF3704PBF is sourced from the original manufacturer or authorized distributors?

All IRF3704PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3704PBF meets industry standards.

7.What is the process for return or replacement of IRF3704PBF?

All IRF3704PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3704PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3704PBF part is unused and in its original packaging.

Return procedure for IRF3704PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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