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Infineon Technologies IRF3704STRLPBF

Part No.:
IRF3704STRLPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRF3704STRLPBF.pdf
Description:
MOSFET N-CH 20V 77A D2PAK
Quantity:
Payment:
Payment
Shipping:
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Inventory:7,419

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Product details

Overview

IRF3704STRLPBF from Infineon Technologies is a 20V, 77A, 9.0mΩ N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-frequency synchronous rectification in isolated DC-DC converters and buck regulators for telecom and industrial power supplies.

For engineers reviewing the IRF3704STRLPBF datasheet, IRF3704STRLPBF pinout, IRF3704STRLPBF application, or IRF3704STRLPBF equivalent, key selection criteria include ultra-low RDS(on), fully characterized avalanche capability (216 mJ), fast switching (tr = 98 ns), low gate charge (Qg = 19 nC), and robust thermal performance (RθJC = 1.73 °C/W).

Technical Context

This MOSFET employs a planar HEXFET structure with optimized cell pitch and trench-free die design to achieve sub-10mΩ on-resistance at 10V gate drive while maintaining low gate-drain charge (Qgd = 6.4 nC) and output capacitance (Coss = 1085 pF), enabling efficient operation above 500 kHz in hard-switched topologies.

Its body diode exhibits low forward voltage (VSD = 0.88 V @ 35.5A, TJ = 25°C) and controlled reverse recovery (Qrr = 45–68 nC, trr = 38–62 ns), supporting synchronous rectification without external Schottky replacement in 12V–20V input rails.

Key Specifications

ParameterValue and Actual Design Meaning
VDS20 V - Maximum blocking voltage compatible with 12V/15V bus systems and low-voltage synchronous rectifier stages.
RDS(on) max9.0 mΩ @ VGS = 10V - Enables <1W conduction loss at 77A continuous drain current in thermally managed designs.
ID continuous77 A @ TC = 25°C - Supports high-current output stages in server VRMs and telecom brick converters.
Qg19 nC - Reduces gate drive power and enables use with low-power PWM controllers or integrated drivers.
EAS216 mJ - Provides single-pulse avalanche ruggedness for unclamped inductive switching in flyback or LLC resonant converters.
tr/tf98 ns / 5.0 ns - Fast edge rates minimize switching transition losses in high-frequency (>300 kHz) SMPS designs.
VGS(th)1.0–3.0 V - Ensures reliable turn-on with 3.3V or 5V logic-level gate drivers without level-shifting.

Pinout & Package

IRF3704STRLPBF uses the industry-standard TO-220AB package with isolated tab (drain-connected), rated for 87 W maximum power dissipation at TC = 25°C and 1.73 °C/W junction-to-case thermal resistance.

Pin/TerminalCircuit RoleDesign Meaning
1 – GateControl electrodeLow-impedance input requiring ≤19 nC charge for full enhancement; sensitive to ESD (±20 V absolute max).
2 – DrainMain current path (high-side or low-side)Internally connected to metal tab; electrically isolated from mounting surface unless tab is soldered to PCB ground plane.
3 – SourceReference node for gate drive and current returnServes as common reference for gate driver ICs; carries full load current and must be routed with low-inductance layout.
4 – DrainSecondary drain connectionRedundant drain terminal for enhanced current handling and lower package inductance in high-di/dt applications.

Key Features

FeatureDesign Value
Ultra-low RDS(on)9.0 mΩ at 10V drive enables >95% efficiency in 12V-input, 1V-output synchronous buck converters at 50A.
Fully characterized avalanche216 mJ single-pulse energy rating allows safe operation during transient overloads without external snubbers.
Optimized gate charge profileQgd/Qg ratio of ~34% reduces Miller plateau duration, improving controllability in high-dV/dt environments.
Enhanced body diode performanceQrr = 45–75 nC and soft recovery support ZVS/ZCS transitions in resonant topologies without oscillation.
Lead-free and RoHS-compliant"PBF" suffix confirms Pb-free plating and halogen-free packaging per JEDEC J-STD-020 and IPC-1752 standards.

Applications

Telecom DC-DC BricksServer Voltage Regulator Modules (VRMs)

Use Scenario: Primary-side synchronous rectification in 48V-to-12V isolated half-bridge converters delivering up to 200W per rail.

IC Role / Device Role / Timing Role: Low-side switch operating at 300–500 kHz with 10V gate drive and forced-air cooling.

Use Value: 9.0mΩ RDS(on) cuts conduction loss by 38% vs. legacy 14mΩ devices, reducing heatsink size by 40% at 70A output.

Use Scenario: High-current phase-leg switch in multiphase buck converters powering Intel/AMD CPUs (up to 300A total).

IC Role / Device Role / Timing Role: Bottom-FET in interleaved 3-phase topology, driven by dedicated gate driver with 1.8Ω source/sink resistance.

Use Value: 19nC Qg and 5ns tf enable clean turn-off under high di/dt (≥200A/µs), minimizing shoot-through risk and gate ringing.

Industrial PLC Power SuppliesHigh-Frequency Buck Converters for FPGAs

Use Scenario: 24V-input, 5V/10A output non-isolated buck converter powering I/O modules in harsh ambient (TA ≤ 70°C).

IC Role / Device Role / Timing Role: Main switching element with PCB-mount heatsinking and 100kHz–1MHz variable frequency control.

Use Value: RθJA = 40°C/W (PCB mount) ensures TJ stays below 125°C without active cooling, extending MTBF beyond 100k hours.

Use Scenario: Point-of-load regulator supplying core voltage (0.8–1.2V) to Xilinx/Intel FPGAs with dynamic load steps up to 50A/µs.

IC Role / Device Role / Timing Role: Synchronous rectifier operating in CCM with adaptive dead-time control and 3.3V gate drive.

Use Value: VGS(th) = 1.0–3.0V guarantees turn-on margin with 3.3V logic drivers, eliminating need for bootstrap or level-shift circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRL3705ZPBFRDS(on) = 8.0 mΩ @ 4.5V, but VDS = 55V; higher Ciss (2500 pF) and Qg (42 nC)Better suited for 3.3V/5V gate drive systems; less optimal for 10V-driven high-frequency designs due to slower switchingSelect when gate drive voltage is limited to ≤5V and higher breakdown margin is required.
STP36NF20VDS = 200V, RDS(on) = 50 mΩ @ 10V, Qg = 45 nC, no avalanche rating publishedDesigned for 100–200V applications; unsuitable for low-voltage, high-current synchronous rectificationOnly consider if system requires >100V blocking voltage-otherwise inferior efficiency and thermal performance.

Compared with IRL3705ZPBF and STP36NF20, IRF3704STRLPBF delivers the optimal balance of low RDS(on), fast switching, and proven avalanche ruggedness specifically for 20V-class, high-frequency DC-DC converters where conduction and switching losses must both be minimized.

Availability

IRF3704STRLPBF is available at Aetrix Electronics and suitable for telecom DC-DC bricks, server VRMs, and industrial PLC power supplies requiring stable component supply and long-term production continuity.

Supply support for IRF3704STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon-based power devices since 1999.

The IRF3704STRLPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in low-voltage, high-current power conversion systems.

FAQ

What is the maximum continuous drain current for IRF3704STRLPBF at 70°C case temperature?

The maximum continuous drain current is 64 A at TC = 70°C with VGS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and must be validated against actual PCB layout and heatsinking in the target application.

Does IRF3704STRLPBF have a specified avalanche energy rating?

Yes-IRF3704STRLPBF is fully characterized for unclamped inductive switching with a single-pulse avalanche energy rating of 216 mJ at TJ = 25°C. This value is measured per JEDEC standard JESD24-1 and applies to repetitive pulses only if peak junction temperature remains within -55°C to +175°C limits.

Can IRF3704STRLPBF be driven directly by a 3.3V microcontroller GPIO?

No-while its gate threshold voltage (VGS(th)) starts at 1.0 V, full enhancement to 9.0 mΩ RDS(on) requires ≥10 V gate drive. At 3.3 V, RDS(on) rises to ~13.5 mΩ, increasing conduction loss significantly; a dedicated gate driver or level shifter is required for reliable operation.

What is the thermal resistance from junction to ambient for IRF3704STRLPBF on a standard PCB?

The junction-to-ambient thermal resistance is 40 °C/W when mounted on a 1-inch square FR-4 PCB (per application note AN-994). This value assumes recommended copper pour area and via placement; actual RθJA will vary with board stack-up, copper weight, and airflow conditions.

IRF3704STRLPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
77A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
19 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1996 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
87W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

IRF3704STRLPBF FAQ

1.How can I place an order for IRF3704STRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3704STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3704STRLPBF reliable?

The price and inventory of IRF3704STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3704STRLPBF is usually 5 days.

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IRF3704STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3704STRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3704STRLPBF?

For technical support, including IRF3704STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3704STRLPBF requirements.

6.How does Aetrix verify that IRF3704STRLPBF is sourced from the original manufacturer or authorized distributors?

All IRF3704STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3704STRLPBF meets industry standards.

7.What is the process for return or replacement of IRF3704STRLPBF?

All IRF3704STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3704STRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3704STRLPBF part is unused and in its original packaging.

Return procedure for IRF3704STRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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