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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3704ZPBF

Name: IRF3704ZPBF
Brand: Infineon Technologies
SKU: IRF3704ZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3704ZPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF3704ZPBF.pdf

Description:: MOSFET N-CH 20V 67A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:9,896

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Product details

Overview

IRF3704ZPBF from Infineon Technologies is a 20V, 7.9mΩ N-channel HEXFET Power MOSFET in TO-220AB package, optimized for high-frequency synchronous buck converters in CPU power delivery. It delivers 57A continuous drain current at 25°C, features ultra-low gate charge (8.7nC), and supports 4.5V logic-level drive with fully characterized avalanche capability.

For engineers reviewing the IRF3704ZPBF datasheet, IRF3704ZPBF pinout, IRF3704ZPBF application, or IRF3704ZPBF equivalent, key selection criteria include R_DS(on) at 4.5V V_GS, Q_g/Q_gd ratio for C_dv/dt immunity, body diode reverse recovery (Q_rr = 2.3–3.5nC), thermal resistance (R_θJC = 2.65°C/W), and unclamped inductive switching robustness (E_AS = 100mJ @ T_J = 25°C).

Technical Context

This MOSFET employs planar vertical DMOS architecture with optimized cell pitch and trench-free die design to achieve low R_DS(on) while maintaining fast switching and low gate-to-drain charge (Q_gd = 2.3nC). Its gate threshold voltage (V_GS(th) = 1.65–2.55V) enables reliable 4.5V logic-level turn-on with minimal temperature drift (–5.6mV/°C).

The device integrates a co-packaged, low-V_SD (≤1.0V), fast-recovery body diode (t_rr = 11–17ns) and is fully rated for repetitive avalanche operation (I_AR = 17A, E_AR = 36mJ). Thermal performance is defined by junction-to-case resistance of 2.65°C/W and PCB-mount junction-to-ambient of 40°C/W.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20V - Maximum blocking voltage compatible with 12V input rails and transient overshoot in CPU VRMs.
R_DS(on) max @ V_GS = 4.5V	7.9mΩ - Enables <1W conduction loss at 40A RMS in high-current CPU core phases.
Q_g	8.7nC - Reduces gate driver power demand and switching transition time in >500kHz converters.
Q_gd	2.3nC - Low ratio to Q_gs1 minimizes risk of C_dv/dt-induced false turn-on in synchronous FET position.
t_rr	11–17ns - Limits shoot-through energy during dead-time in synchronous rectification.
E_AS	100mJ @ T_J = 25°C - Supports robust operation under unclamped inductive load faults without derating.
R_θJC	2.65°C/W - Allows direct heatsink mounting for thermal management in compact VRM layouts.

Pinout & Package

IRF3704ZPBF uses the standard TO-220AB package with isolated tab (non-conductive mounting surface), 3-pin configuration, and 10 lbf·in (1.1N·m) mounting torque rating.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically connected to metal tab; requires insulating washer when mounted to grounded heatsink.
Source	Reference node for gate drive and current sensing	Low-inductance connection point for source resistor or Kelvin sense trace in high-di/dt applications.
Gate	Control terminal for channel modulation	High-impedance input requiring low-ESR gate resistor (typically 5–10Ω) to damp ringing and control dV/dt.

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Guaranteed turn-on at V_GS = 4.5V, enabling direct interface with PWM controllers like ISL63xx and uP9512.
Fully characterized avalanche rating	Specified single-pulse (E_AS) and repetitive (E_AR) energy limits eliminate need for external snubbers in VRM fault conditions.
Ultra-low gate impedance	Q_g/Q_gd ratio < 4 ensures stable operation in high-dV/dt synchronous FET position without Miller clamping.
Lead-free and RoHS-compliant construction	Meets IPC-J-STD-020D reflow profile (peak 260°C/10s), suitable for lead-free SMT assembly and legacy through-hole processes.

Applications

Server CPU Voltage Regulator

Laptop Core Power Stage

Use Scenario: High-density, multi-phase buck converter supplying 0.8–1.5V/100A+ to Intel Xeon or AMD EPYC processors.

IC Role / Device Role / Timing Role: Control FET in upper-side switching position, switching at 300–1000kHz with precise dead-time control.

Use Value: 7.9mΩ R_DS(on) at 4.5V reduces conduction loss by 32% vs. legacy 12V-gate MOSFETs, improving full-load efficiency by ≥0.8%.

Use Scenario: Dual-phase VR for mobile GPU and CPU cores in ultrabook platforms with strict thermal envelope (<4W per phase).

IC Role / Device Role / Timing Role: Synchronous FET in lower-side position, conducting during freewheeling interval with body diode commutation.

Use Value: 11ns t_rr and 2.3nC Q_rr minimize reverse recovery loss and associated heating, enabling 92% efficiency at 20A/1V output.

Industrial PLC I/O Power Switch

Automotive ADAS Camera Power Supply

Use Scenario: 24V input DC/DC stage powering isolated analog front-end and FPGA in programmable logic controllers.

IC Role / Device Role / Timing Role: Primary switch in non-synchronous buck topology with external Schottky catch diode.

Use Value: 20V V_DS rating provides 2× safety margin over 24V nominal rail, while 100mJ E_AS withstands inductive kickback from solenoid drivers.

Use Scenario: Compact 5V/3A power module for CMOS image sensor and ISP in rear-view or surround-view camera ECU.

IC Role / Device Role / Timing Role: High-side load switch with integrated reverse polarity protection and controlled inrush.

Use Value: 1.65V V_GS(th) min ensures reliable turn-on across automotive temperature range (–40°C to +125°C), eliminating need for gate boost circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3705ZPBF	R_DS(on) = 8.0mΩ @ 4.5V, Q_g = 10.5nC, same TO-220AB package	Slightly higher gate charge increases driver loss and slows switching in >600kHz designs	Preferable only if higher avalanche energy (E_AS = 120mJ) is required for harsh industrial transients.
SI4435DY-T1-E3	SO-8 package, R_DS(on) = 7.5mΩ @ 4.5V, Q_g = 12nC, no isolated tab	Surface-mount form factor enables smaller footprint but requires PCB copper area for thermal dissipation	Select for space-constrained consumer electronics where TO-220 mechanical mounting is impractical.

Compared with IRL3705ZPBF and SI4435DY-T1-E3, IRF3704ZPBF offers the best balance of low Q_g/Q_gd ratio, proven avalanche ruggedness, and through-hole thermal interface-making it optimal for high-reliability, high-current CPU VRMs where gate drive efficiency and fault tolerance are critical.

Availability

IRF3704ZPBF is available at Aetrix Electronics and suitable for server CPU voltage regulators, laptop core power stages, industrial PLC I/O supplies, and automotive ADAS camera power modules requiring stable component supply and long-term lifecycle support.

Supply support for IRF3704ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The IRF3704ZPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing and communications infrastructure where low R_DS(on), fast switching, and avalanche reliability are mandatory.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRF3704ZPBF supports 47A continuous drain current at T_C = 100°C with V_GS = 10V, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced channel conductivity and increased R_DS(on) at elevated temperatures, and must be applied with appropriate heatsinking to maintain junction temperature below 175°C.

Does IRF3704ZPBF have an integrated ESD protection diode on the gate?

No, the IRF3704ZPBF does not include integrated gate ESD protection. Its gate oxide is rated for ±20V maximum V_GS, and handling requires standard MOSFET ESD precautions-including grounded wrist straps, conductive foam storage, and gate-to-source shorting during PCB assembly-to prevent damage from static discharge exceeding 100nA leakage limit.

Can IRF3704ZPBF be used in linear mode (saturation region) for analog current regulation?

No, IRF3704ZPBF is not characterized or rated for linear-mode operation. Its Safe Operating Area (SOA) curve shows severe restriction above 10V V_DS at DC, and power dissipation is limited to 67W at T_C = 25°C. For analog current regulation, discrete bipolar transistors or purpose-built linear MOSFETs with extended SOA and thermal feedback are recommended.

What is the typical reverse recovery charge (Q_rr) of the body diode under standard test conditions?

The body diode Q_rr is specified as 2.3–3.5nC at I_S = 17A, V_DD = 10V, and di/dt = 100A/µs, measured with V_GS = 0V. This value directly impacts synchronous rectifier losses and must be included in total switching loss calculations alongside Q_oss and Q_g when designing high-frequency buck converters.

IRF3704ZPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 67A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.9mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 2.55V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1220 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 57W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF3704ZPBF FAQ

1.How can I place an order for IRF3704ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3704ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3704ZPBF reliable?

The price and inventory of IRF3704ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3704ZPBF is usually 5 days.

3.What payment methods are accepted for IRF3704ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3704ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3704ZPBF?

IRF3704ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3704ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3704ZPBF?

For technical support, including IRF3704ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3704ZPBF requirements.

6.How does Aetrix verify that IRF3704ZPBF is sourced from the original manufacturer or authorized distributors?

All IRF3704ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3704ZPBF meets industry standards.

7.What is the process for return or replacement of IRF3704ZPBF?

All IRF3704ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3704ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3704ZPBF part is unused and in its original packaging.

Return procedure for IRF3704ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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