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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3704ZSPBF

Name: IRF3704ZSPBF
Brand: Infineon Technologies
SKU: IRF3704ZSPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3704ZSPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF3704ZSPBF.pdf

Description:: MOSFET N-CH 20V 67A D2PAK

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Product details

Overview

IRF3704ZSPBF from Infineon Technologies is a 20V, 7.9mΩ N-channel HEXFET Power MOSFET in D2Pak (TO-263) package, optimized for high-frequency synchronous buck converters in CPU core power delivery. It delivers 57A continuous drain current at T_C = 25°C, features ultra-low gate charge (8.7nC), and supports 4.5V logic-level drive with robust avalanche capability (100mJ E_AS).

For engineers reviewing the IRF3704ZSPBF datasheet, IRF3704ZSPBF pinout, IRF3704ZSPBF application in VRM/VRD power stages, or IRF3704ZSPBF equivalent for low-R_DS(on) switching FETs, this page provides verified electrical parameters, thermal performance data, body diode recovery characteristics, and validated alternative parts for server/desktop processor power designs.

Technical Context

This MOSFET employs planar silicon process technology with optimized cell pitch and trench-free structure to achieve R_DS(on) of 6.5mΩ (typ.) at V_GS = 10V and 7.9mΩ (max.) at V_GS = 4.5V. Its gate charge profile shows Q_gd/Q_gs1 ratio of 2.3nC/2.9nC - critical for minimizing C_dv/dt turn-on risk in high-dV/dt synchronous nodes.

Thermal design is enabled by R_θJC = 2.65°C/W and R_θJA = 40°C/W (PCB mount). The integrated body diode exhibits t_rr = 11–17ns and Q_rr = 2.3–3.5nC at I_F = 17A, supporting efficient reverse recovery in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20V - Maximum blocking voltage compatible with 12V input bus and 1.8V CPU core rails.
R_DS(on) max @ 4.5V	7.9mΩ - Enables <1W conduction loss at 40A RMS in compact VRM phases.
Q_g	8.7nC - Reduces gate drive power and enables >1MHz switching with standard PWM controllers.
I_D @ T_C = 25°C	57A - Supports high-current single-phase or multi-phase interleaved CPU power stages.
E_AS	100mJ - Withstands unclamped inductive energy during transient overloads without failure.
t_rr	11–17ns - Limits reverse recovery losses and shoot-through risk in synchronous rectification.
R_θJC	2.65°C/W - Allows direct heatsink mounting for thermal management in space-constrained server boards.

Pinout & Package

IRF3704ZSPBF uses the surface-mount D2Pak (TO-263) package with exposed drain pad for thermal and electrical connection. Pin assignment follows standard 3-pin configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control terminal	Receives PWM signal; low input capacitance (C_iss = 1220pF) minimizes driver loading.
Drain (D)	High-side switch node	Exposed copper tab connects directly to PCB ground plane or heatsink; carries full load current.
Source (S)	Reference node	Provides return path for channel current and body diode conduction; tied to power ground.

Key Features

Feature	Design Value
Logic-level gate drive	Guaranteed R_DS(on) ≤ 7.9mΩ at V_GS = 4.5V - eliminates need for level-shifting gate drivers in 5V/3.3V control systems.
Ultra-low Q_gd/Q_gs1 ratio	2.3nC / 2.9nC = 0.79 - suppresses parasitic turn-on during high dV/dt transitions in synchronous buck switches.
Enhanced avalanche ruggedness	100mJ single-pulse E_AS - protects against inductive kickback during startup, fault, or phase imbalance.
Optimized body diode	Q_rr = 2.3–3.5nC and t_rr = 11–17ns - reduces cross-conduction losses and EMI in high-frequency VRMs.

Applications

Server CPU Core Power

Desktop VRM Phase

Use Scenario: High-current, multi-phase buck converter supplying 1.0–1.8V to Intel Xeon or AMD EPYC processors under dynamic load.

IC Role / Device Role / Timing Role: Synchronous FET in low-side position; switched at 300–1000kHz with precise dead-time control.

Use Value: 7.9mΩ R_DS(on) at 4.5V enables >92% efficiency at 40A while maintaining thermal margin on 4-layer PCB.

Use Scenario: Single-phase or dual-phase VRM on consumer motherboard delivering stable 1.2V to desktop CPUs.

IC Role / Device Role / Timing Role: Control FET in high-side position; driven by dedicated gate driver IC with 10–15V supply.

Use Value: 2.65°C/W R_θJC allows direct heatsink attachment, sustaining 57A continuous current without derating.

Laptop GPU Power Stage

Industrial DC-DC Module

Use Scenario: Compact 20V-input buck regulator powering discrete GPU cores in thin-and-light notebooks.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier; operated with adaptive dead-time to minimize body diode conduction.

Use Value: 11ns t_rr limits reverse recovery loss to <50mW per cycle, preserving battery runtime.

Use Scenario: Isolated or non-isolated 24V-to-5V/3.3V converter in programmable logic controller (PLC) power supply.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or synchronous buck topology.

Use Value: 100mJ E_AS withstands surge events from motor drive back-EMF coupling into auxiliary rails.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3713PbF	R_DS(on) = 8.0mΩ @ 4.5V; Q_g = 9.2nC; TO-220AB package	Higher R_θJA (62°C/W) limits power density; requires through-hole mounting	Preferred where mechanical robustness and manual reworkability outweigh thermal density needs.
SiR872DP-T1-GE3	R_DS(on) = 5.8mΩ @ 4.5V; Q_g = 12.5nC; PowerPAK SO-8L package	Lower R_DS(on) but higher Q_g increases gate drive loss above 500kHz	Better for fixed-frequency <500kHz designs needing lowest conduction loss in small footprint.

Compared with IRF3704ZSPBF, IRL3713PbF trades thermal performance for assembly flexibility, while SiR872DP-T1-GE3 improves conduction loss at the cost of higher switching loss and reduced high-frequency suitability - making IRF3704ZSPBF optimal for 600–1000kHz VRM applications requiring balanced R_DS(on)/Q_g.

Availability

IRF3704ZSPBF is available at Aetrix Electronics and suitable for server CPU core power, desktop VRM phase design, and industrial DC-DC modules requiring stable component supply and long-term lifecycle support.

Supply support for IRF3704ZSPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET Power MOSFET product line targets high-efficiency, high-reliability power conversion in computing, telecom, and industrial applications - with IRF3704ZSPBF engineered specifically for low-voltage, high-current synchronous buck stages.

FAQ

What is the maximum junction temperature for reliable operation?

The IRF3704ZSPBF has a rated operating junction temperature range of –55°C to +175°C. For continuous reliability in high-power applications, junction temperature should be maintained below 150°C using appropriate heatsinking and airflow. Derating begins at T_J > 125°C per the linear derating factor of 0.38W/°C above 25°C case temperature.

Can IRF3704ZSPBF be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (0.014V/°C) ensures inherent current sharing when paralleled. However, layout symmetry (matched gate and source inductance) and individual gate resistors (≥5Ω) are required to prevent oscillation and ensure balanced switching. Thermal coupling between devices must also be minimized.

Is the body diode suitable for reverse recovery in hard-switched topologies?

Yes - the body diode is fully characterized with t_rr = 11–17ns and Q_rr = 2.3–3.5nC at I_F = 17A. These values enable use in hard-switched synchronous buck converters up to 1MHz, provided dead time is set ≥100ns to avoid shoot-through while allowing full recovery.

Does IRF3704ZSPBF meet RoHS and lead-free requirements?

Yes - the "PbF" suffix confirms compliance with RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 3 moisture sensitivity. The device uses lead-free matte tin plating on terminals and is qualified for reflow soldering at 260°C for 10 seconds, matching IPC/JEDEC J-STD-020D standards.

IRF3704ZSPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 67A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.9mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 2.55V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1220 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 57W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF3704ZSPBF FAQ

1.How can I place an order for IRF3704ZSPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3704ZSPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3704ZSPBF reliable?

The price and inventory of IRF3704ZSPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3704ZSPBF is usually 5 days.

3.What payment methods are accepted for IRF3704ZSPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3704ZSPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3704ZSPBF?

IRF3704ZSPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3704ZSPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3704ZSPBF?

For technical support, including IRF3704ZSPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3704ZSPBF requirements.

6.How does Aetrix verify that IRF3704ZSPBF is sourced from the original manufacturer or authorized distributors?

All IRF3704ZSPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3704ZSPBF meets industry standards.

7.What is the process for return or replacement of IRF3704ZSPBF?

All IRF3704ZSPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3704ZSPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3704ZSPBF part is unused and in its original packaging.

Return procedure for IRF3704ZSPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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