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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3704ZSTRRPBF

Name: IRF3704ZSTRRPBF
Brand: Infineon Technologies
SKU: IRF3704ZSTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3704ZSTRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF3704ZSTRRPBF.pdf

Description:: MOSFET N-CH 20V 67A D2PAK

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Product details

Overview

IRF3704ZSTRRPBF from Infineon Technologies is a 20V, 7.9mΩ N-channel HEXFET Power MOSFET in D2Pak (TO-263) package, optimized for high-frequency synchronous buck converters in CPU core power delivery. It delivers 67A continuous drain current at 25°C, features ultra-low gate charge (8.7nC), and supports 4.5V logic-level drive with fully characterized avalanche capability.

For engineers reviewing the IRF3704ZSTRRPBF datasheet, IRF3704ZSTRRPBF pinout, IRF3704ZSTRRPBF application, or IRF3704ZSTRRPBF equivalent, key selection criteria include R_DS(on) at 4.5V, Q_g/Q_gd ratio for C_dv/dt immunity, body diode reverse recovery (Q_rr = 2.3–3.5nC), thermal resistance (R_θJC = 2.65°C/W), and unclamped inductive switching robustness (E_AS = 100mJ).

Technical Context

This MOSFET employs planar V-groove silicon technology to achieve low on-resistance while maintaining tight threshold voltage distribution (V_GS(th) = 1.65–2.55V) and negative temperature coefficient for gate threshold (−5.6mV/°C). Its low output charge (Q_oss = 5.6nC) and reverse transfer capacitance (C_rss = 190pF) reduce switching losses in hard-switched topologies.

The device integrates a fast, low-V_SD (≤1.0V) body diode with t_rr = 11–17ns and Q_rr = 2.3–3.5nC, enabling efficient synchronous rectification without external Schottky replacement. Avalanche rating is specified under clamped inductive load (I_AR = 17A, E_AS = 100mJ), supporting reliable operation in transient overloads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20V - Maximum blocking voltage compatible with 12V input rails and 5V/3.3V output stages in VRM applications.
R_DS(on) max @ V_GS = 4.5V	7.9mΩ - Enables <1W conduction loss at 40A RMS in CPU power stages with minimal heatsinking.
Q_g total	8.7nC - Reduces gate drive power and enables use with low-current PWM controllers (e.g., ISL6208, uP1966).
Q_gd/Q_gs1 ratio	~0.79 - Low ratio minimizes risk of C_dv/dt-induced turn-on during high-dV/dt node transitions in synchronous FET position.
t_rr & Q_rr	11–17ns / 2.3–3.5nC - Limits shoot-through energy and reduces stress on control FET during dead-time recovery.
R_θJC	2.65°C/W - Allows direct mounting to copper heatsink or PCB thermal pad for >60W dissipation at ΔT = 160°C.

Pinout & Package

IRF3704ZSTRRPBF uses the surface-mount D2Pak (TO-263) package with isolated tab, rated for 1.1N·m mounting torque. Thermal path is optimized via exposed drain pad soldered directly to PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main power drain connection and thermal interface	Electrically connected to internal drain; must be soldered to large copper area for thermal and electrical performance.
Lead 1 (Source)	Source terminal for power return path	Low-inductance source connection critical for minimizing switching loop inductance in synchronous buck layout.
Lead 2 (Gate)	Control input for channel modulation	High-impedance input requiring low-ESR gate resistor (typically 2–10Ω) to damp ringing and control dV/dt.

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Guaranteed R_DS(on) ≤7.9mΩ at V_GS = 4.5V - eliminates need for level-shifting or bootstrap circuitry in 5V-control systems.
Fully characterized avalanche energy	E_AS = 100mJ (T_J = 25°C) - enables robust operation under inductive fault conditions without derating.
Ultra-low gate-to-drain charge (Q_gd)	2.3nC - suppresses Miller-induced oscillation and improves noise immunity in high-dV/dt environments.
Optimized body diode recovery	Q_rr = 2.3–3.5nC with soft recovery - reduces EMI and cross-conduction losses versus standard MOSFETs.

Applications

Server CPU Voltage Regulator

Laptop Core Power Stage

Use Scenario: High-current, multi-phase VR12/VR13 buck converter delivering up to 200A to Intel/AMD processors.

IC Role / Device Role / Timing Role: Synchronous FET in low-side position, switching at 300–1000kHz with precise dead-time control.

Use Value: Low Q_rr and fast t_rr minimize body diode conduction loss and reduce control-FET stress during light-load discontinuous conduction mode.

Use Scenario: Compact dual-phase buck regulator powering mobile SoC cores in space-constrained ultrabooks.

IC Role / Device Role / Timing Role: Low-side switch operating at 500kHz with 4.5V gate drive from integrated PWM controller.

Use Value: 7.9mΩ R_DS(on) at 4.5V enables >92% efficiency at 25A load without active cooling, reducing thermal footprint.

GPU Core Power Delivery

ASIC/FPGA Core Rail

Use Scenario: High-transient GPU power rail requiring rapid response to dynamic load steps exceeding 100A/µs.

IC Role / Device Role / Timing Role: Low-side FET in 4-phase interleaved buck, handling peak currents up to 67A per phase.

Use Value: 2.65°C/W R_θJC and 100mJ E_AS ensure stable operation during burst-mode transients without thermal shutdown.

Use Scenario: Point-of-load regulator for high-performance FPGA fabric or AI accelerator core voltage (0.7–0.9V).

IC Role / Device Role / Timing Role: Synchronous rectifier in 600kHz–1MHz buck stage with tight output voltage regulation.

Use Value: Low Q_g/Q_gd ratio prevents spurious turn-on during high-dV/dt node swings, eliminating shoot-through failure modes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3705ZPBF	R_DS(on) = 8.0mΩ @ 4.5V; Q_g = 12.5nC; higher gate charge increases drive loss	Same D2Pak package but slower switching due to higher Q_gd (3.5nC)	Preferred where lower cost outweighs 15% higher gate drive loss and reduced C_dv/dt margin.
SUD50P04-09B	P-channel, −40V, 9mΩ @ −4.5V; requires high-side driver and inverted logic	Used in high-side configuration only; incompatible with low-side synchronous topology	Select only when redesigning for high-side switch architecture with complementary drive requirements.

Compared with IRL3705ZPBF and SUD50P04-09B, IRF3704ZSTRRPBF offers superior gate charge efficiency and native low-side compatibility, making it optimal for high-frequency, high-efficiency synchronous buck designs where gate drive simplicity and shoot-through immunity are critical.

Availability

IRF3704ZSTRRPBF is available at Aetrix Electronics and suitable for server CPU voltage regulators, laptop core power stages, and GPU power delivery systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRF3704ZSTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency DC/DC conversion in computing and communications infrastructure where low R_DS(on), fast switching, and rugged avalanche performance are mandatory.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRF3704ZSTRRPBF supports 47A continuous drain current at T_C = 100°C with V_GS = 10V, as specified in the Absolute Maximum Ratings table. Derating follows linear 0.38W/°C above 100°C ambient, and actual usable current depends on PCB copper area, heatsink interface, and airflow.

Does this MOSFET require a gate resistor, and what value is recommended?

Yes - a series gate resistor (2–10Ω) is required to dampen gate-source ringing and control switching speed. A 4.7Ω resistor is typical for 500kHz operation with 12V gate drive; lower values increase dV/dt and EMI, higher values raise switching losses and delay times.

Can IRF3704ZSTRRPBF replace IRF3704ZPBF in existing designs?

Yes - IRF3704ZSTRRPBF is the tape-and-reel, lead-free version of IRF3704ZPBF, sharing identical electrical specs, thermal characteristics, and D2Pak mechanical outline. No layout or firmware changes are needed; only requalification for RoHS compliance and moisture sensitivity level (MSL3) handling is required.

How does its body diode performance compare to discrete Schottky diodes in synchronous rectification?

At 17A and 25°C, its V_SD is ≤1.0V - higher than a 0.4V Schottky - but its Q_rr (2.3–3.5nC) is significantly lower than most Schottkys (>10nC), reducing reverse recovery loss and EMI. In high-frequency buck converters, this trade-off favors overall efficiency and reliability without added component count.

IRF3704ZSTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 67A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.9mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 2.55V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1220 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 57W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF3704ZSTRRPBF FAQ

1.How can I place an order for IRF3704ZSTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3704ZSTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3704ZSTRRPBF reliable?

The price and inventory of IRF3704ZSTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3704ZSTRRPBF is usually 5 days.

3.What payment methods are accepted for IRF3704ZSTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3704ZSTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3704ZSTRRPBF?

IRF3704ZSTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3704ZSTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3704ZSTRRPBF?

For technical support, including IRF3704ZSTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3704ZSTRRPBF requirements.

6.How does Aetrix verify that IRF3704ZSTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRF3704ZSTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3704ZSTRRPBF meets industry standards.

7.What is the process for return or replacement of IRF3704ZSTRRPBF?

All IRF3704ZSTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3704ZSTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3704ZSTRRPBF part is unused and in its original packaging.

Return procedure for IRF3704ZSTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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