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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3707PBF

Name: IRF3707PBF
Brand: Infineon Technologies
SKU: IRF3707PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3707PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF3707PBF.pdf

Description:: MOSFET N-CH 30V 62A TO220AB

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Product details

Overview

IRF3707PBF from Infineon Technologies is a 30V, 62A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, featuring 12.5mΩ R_DS(on) at V_GS = 10V, ultra-low gate impedance, and fully characterized avalanche capability. It serves as a primary synchronous rectifier or main switch in high-frequency DC-DC isolated converters for telecom power supplies.

For engineers reviewing the IRF3707PBF datasheet, IRF3707PBF pinout, IRF3707PBF application, or IRF3707PBF equivalent, key selection criteria include its 12.5mΩ on-resistance at 10V drive, 248A pulsed drain current rating, 213mJ single-pulse avalanche energy, and thermal resistance of 1.73°C/W junction-to-case - critical for high-efficiency, thermally constrained SMPS designs.

Technical Context

This MOSFET employs planar silicon HEXFET architecture optimized for low conduction and switching losses in hard-switched and resonant topologies. Its gate charge profile (Q_g = 19nC, Q_gd = 6.3nC) supports fast turn-on/turn-off with minimal Miller-induced shoot-through risk in synchronous buck and forward converters.

The device integrates a robust body diode with 39–63ns reverse recovery time and 49–93nC Q_rr, enabling reliable operation in freewheeling and bidirectional current paths without external Schottky supplementation in mid-power telecom applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30V - Maximum blocking voltage for 24V-input telecom and industrial DC-DC stages
R_DS(on) max	12.5mΩ @ V_GS = 10V - Enables ≤0.78W conduction loss at 62A continuous drain current
I_D continuous	62A @ T_C = 25°C - Supports high-current output rails in compact 1U server PSUs
E_AS	213mJ - Withstands unclamped inductive switching stress in flyback and LLC transient events
Q_g	19nC - Allows efficient gate driving with standard 1A peak drivers at 500kHz switching
R_θJC	1.73°C/W - Enables direct heatsink mounting for thermal management in convection-cooled enclosures
t_r/t_f	78ns/3.3ns - Fast edge rates reduce switching transition losses in high-frequency (>300kHz) converters

Pinout & Package

IRF3707PBF uses the industry-standard TO-220AB package with exposed drain tab for thermal and electrical connection. The case is electrically connected to the drain terminal (Pin 2 and Pin 4), requiring isolation hardware when mounted to grounded heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control electrode	Low-impedance input (C_iss = 1990pF) requiring <19nC charge for full enhancement; sensitive to ESD
2 - Drain	High-side power terminal	Internally bonded to metal tab; electrically tied to Pin 4 - must be insulated from chassis ground
3 - Source	Reference node / return path	Common connection point for gate driver return, current sensing, and load return - defines local ground reference
4 - Drain	Secondary drain connection	Redundant drain bond for lower inductance and improved thermal spreading; shares same potential as Pin 2

Key Features

Feature	Design Value
Ultra-low R_DS(on)	12.5mΩ @ 10V enables >95% efficiency in 48V→12V synchronous buck converters at 50A
Fully characterized avalanche	213mJ E_AS rating verified per JEDEC JESD24-11 - eliminates need for external snubbers in inductive switching
Optimized gate charge	Q_gd/Q_g ratio of ~33% reduces Miller plateau duration, improving controllability during dV/dt transitions
Lead-free construction	RoHS-compliant Pb-free plating and packaging - qualified for industrial and telecom equipment with IPC-J-STD-020 reflow profiles

Applications

Telecom DC-DC Converters

Server VRMs

Use Scenario: Primary-side switch in 48V input, 12V/60A isolated forward converter for central office power systems.

IC Role / Device Role / Timing Role: Main power switch operating at 200–500kHz with synchronous rectification on secondary side.

Use Value: 12.5mΩ R_DS(on) and 248A I_DM support high peak current handling during load transients without derating.

Use Scenario: High-side FET in multiphase 48V→0.8V buck converter for AI accelerator cards.

IC Role / Device Role / Timing Role: Fast-switching power stage driven by integrated gate driver ICs with tight dead-time control.

Use Value: Low Q_gd (6.3nC) minimizes Miller-induced false turn-on, enabling stable operation at 1MHz+ switching frequencies.

Industrial SMPS

Renewable Energy Inverters

Use Scenario: Output rectifier in 24V/48V battery-charged DC-DC module for PLC backplanes.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diodes to reduce forward voltage drop and improve light-load efficiency.

Use Value: Body diode V_SD = 0.88V @ 31A enables <0.5W conduction loss vs. >2W for 40V Schottky alternatives.

Use Scenario: DC link switch in string-level solar microinverter power stage.

IC Role / Device Role / Timing Role: Hard-switched high-side switch in interleaved boost stage handling up to 15A average current.

Use Value: 175°C maximum junction temperature and 1.73°C/W R_θJC allow sustained operation under ambient temperatures up to 85°C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP30NF3LL	R_DS(on) = 14mΩ @ 10V; Q_g = 22nC; TO-220 package	Slightly higher conduction loss and gate drive requirement; identical avalanche rating (220mJ)	Preferred where STMicroelectronics supply chain alignment is required and 1.5mΩ R_DS(on) penalty is acceptable
IXTP30N30P	R_DS(on) = 13.5mΩ @ 10V; Q_g = 25nC; TO-220 package; 300V V_DS	Higher voltage rating increases cost and capacitance; unsuitable for 30V-optimized layouts	Only suitable if future-proofing for higher bus voltages is mandatory; otherwise over-specified

Compared with STP30NF3LL and IXTP30N30P, IRF3707PBF delivers the lowest R_DS(on) and gate charge in the 30V class, making it optimal for space-constrained, high-efficiency telecom and server power stages where thermal headroom and switching speed are critical.

Availability

IRF3707PBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and industrial SMPS requiring stable component supply, long-term lifecycle support, and RoHS-compliant lead-free assembly.

Supply support for IRF3707PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification standards aligned to AEC-Q101 and IEC 60747.

The HEXFET Power MOSFET product line targets high-efficiency switching power conversion, emphasizing low R_DS(on), robust avalanche performance, and thermal reliability for telecom, computing, and industrial infrastructure applications.

FAQ

What is the maximum junction temperature and thermal resistance of IRF3707PBF?

The absolute maximum junction temperature is +175°C. Its thermal resistance from junction to case (R_θJC) is 1.73°C/W, measured with the device mounted on a flat, greased heatsink. This value assumes full contact between the TO-220AB drain tab and heatsink surface - inadequate thermal interface material or mounting pressure will degrade actual performance.

Does IRF3707PBF have avalanche capability, and is it tested per industry standard?

Yes, IRF3707PBF is fully characterized for unclamped inductive switching with a rated single-pulse avalanche energy (E_AS) of 213mJ at T_J = 25°C. Testing follows JEDEC JESD24-11 methodology using standardized test circuits and waveforms, with results documented in the official Infineon datasheet revision dated 2022.

Can IRF3707PBF be used as a synchronous rectifier in a 48V-to-12V isolated converter?

Yes - its low R_DS(on) (12.5mΩ), fast body diode (t_rr = 39–63ns), and low Q_rr (49–93nC) make it suitable for secondary-side synchronous rectification in forward or LLC converters. Gate drive must be referenced to source and timed to avoid cross-conduction; typical V_GS(th) of 1.0–3.0V ensures reliable turn-on with 5V logic-level signals.

What is the gate threshold voltage range, and how does it affect drive circuit design?

V_GS(th) is specified from 1.0V to 3.0V at I_D = 250µA. This wide range means gate drive must exceed 4.5V to ensure full enhancement across process and temperature extremes. At V_GS = 4.5V, R_DS(on) rises to 12.6–17mΩ - design must verify conduction loss meets target efficiency at worst-case V_GS and T_J.

IRF3707PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 62A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1990 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 87W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF3707PBF FAQ

1.How can I place an order for IRF3707PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3707PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3707PBF reliable?

The price and inventory of IRF3707PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3707PBF is usually 5 days.

3.What payment methods are accepted for IRF3707PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3707PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3707PBF?

IRF3707PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3707PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3707PBF?

For technical support, including IRF3707PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3707PBF requirements.

6.How does Aetrix verify that IRF3707PBF is sourced from the original manufacturer or authorized distributors?

All IRF3707PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3707PBF meets industry standards.

7.What is the process for return or replacement of IRF3707PBF?

All IRF3707PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3707PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3707PBF part is unused and in its original packaging.

Return procedure for IRF3707PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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