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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3707SPBF

Name: IRF3707SPBF
Brand: Infineon Technologies
SKU: IRF3707SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3707SPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF3707SPBF.pdf

Description:: MOSFET N-CH 30V 62A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF3707SPBF from Infineon Technologies (formerly International Rectifier) is a 30V, 62A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-frequency synchronous rectification in isolated DC-DC converters and buck regulators. It delivers ultra-low 12.5 mΩ R_DS(on) at V_GS = 10 V, fully characterized avalanche capability (213 mJ), and low gate charge (19 nC), enabling efficient switching in telecom and industrial power supplies.

For engineers reviewing the IRF3707SPBF datasheet, IRF3707SPBF pinout, IRF3707SPBF application, or IRF3707SPBF equivalent, key selection criteria include its 30V V_DS, 12.5 mΩ on-resistance at 10V drive, 62A continuous drain current at T_C = 25°C, fast 78 ns rise time, and body diode reverse recovery charge of 49–74 nC - all critical for high-efficiency SMPS design.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-free process to minimize conduction and switching losses. Its gate threshold voltage (1.0–3.0 V) enables compatibility with 4.5V logic-level drive, while the 19 nC total gate charge and 6.3 nC Miller charge support clean, fast turn-on/turn-off under 1.8 Ω gate resistance.

The device integrates a robust intrinsic body diode with 39–63 ns reverse recovery time and 49–93 nC Q_rr, making it suitable for hard-switched and synchronous rectifier topologies where diode conduction and recovery behavior directly impact efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24V-input DC-DC stages and point-of-load converters
R_DS(on) max	12.5 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 62 A, reducing heatsink requirements
I_D cont	62 A @ T_C = 25°C - Supports high-current output rails in server VRMs and telecom rectifiers
Q_g	19 nC - Allows efficient gate driving with standard 1A peak drivers at >500 kHz switching
E_AS	213 mJ - Withstands unclamped inductive energy during fault conditions without failure
t_r/t_f	78 ns / 3.3 ns - Fast edge rates reduce switching transition losses in high-frequency operation
Q_rr	49–74 nC @ T_J = 25°C - Low recovered charge minimizes diode-induced shoot-through and ringing

Pinout & Package

IRF3707SPBF uses the industry-standard TO-220AB package (JEDEC outline), with exposed drain tab for thermal mounting and mechanical stability. The case is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
1 – Gate	Control electrode	Receives voltage-controlled signal to modulate channel conductivity; requires low-impedance drive due to 19 nC Q_g
2 – Drain	High-side power terminal	Connected to heat sink and primary-side rail; carries full load current and withstands 30 V breakdown
3 – Source	Reference node / return path	Serves as common reference for gate drive and current sensing; tied to power ground in low-side switch configuration
4 – Drain (tab)	Thermal & electrical connection	Provides low-thermal-resistance path (R_θJC = 1.73 °C/W) and reinforces drain current handling capacity

Key Features

Feature	Design Value
Ultra-low R_DS(on)	12.5 mΩ @ 10 V enables <1.2 W conduction loss at 50 A, reducing thermal stress in compact layouts
Fully characterized avalanche	213 mJ single-pulse rating allows reliable operation in inductive switching faults without derating
Low gate impedance	19 nC Q_g and 6.3 nC Q_gd minimize Miller effect, supporting stable 1 MHz+ switching with minimal gate oscillation
Enhanced body diode	49–74 nC Q_rr and 39–63 ns t_rr reduce reverse recovery losses in synchronous rectifier applications
Lead-free & RoHS-compliant	"PbF" suffix confirms exemption-compliant termination, meeting IPC-J-STD-020 moisture sensitivity level 1 (MSL-1)

Applications

Telecom DC-DC Converters

Server Voltage Regulator Modules (VRMs)

Use Scenario: Isolated 48V-to-12V intermediate bus converter with synchronous rectification in 1U telecom shelf.

IC Role / Device Role / Timing Role: Primary-side high-side switch and secondary-side synchronous rectifier MOSFET in forward or LLC topology.

Use Value: 12.5 mΩ R_DS(on) and 213 mJ avalanche energy ensure high efficiency (>94%) and fault tolerance during line transients.

Use Scenario: Multiphase buck converter delivering up to 200 A to CPU/GPU cores in data center servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–600 kHz with 4.5V gate drive.

Use Value: 49–74 nC Q_rr and fast 3.3 ns fall time minimize dead-time losses and improve light-load efficiency.

Industrial Motor Drive Inverters

High-Frequency Buck Converters

Use Scenario: 24V/48V BLDC inverter stage for HVAC blowers and factory automation actuators.

IC Role / Device Role / Timing Role: Half-bridge low-side switch controlling PWM-modulated phase current.

Use Value: 62 A continuous rating and 1.73 °C/W R_θJC allow direct heatsink mounting without thermal derating at full load.

Use Scenario: Notebook adapter or PoE++ PSE controller delivering 5–20 V at up to 90 W.

IC Role / Device Role / Timing Role: Main switching FET in fixed-frequency synchronous buck regulator.

Use Value: 78 ns rise time and 19 nC Q_g enable clean transitions at 1 MHz, reducing output filter size and cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP30NF20	200 V V_DS, 30 A I_D, 40 mΩ R_DS(on), TO-220 package	Higher voltage rating but lower current and higher on-resistance; suited for 100–200 V flyback or PFC stages	Select when system requires >100 V blocking and lower cost outweighs conduction loss penalty
IRF1404PBF	40 V V_DS, 169 A I_D, 4.9 mΩ R_DS(on), TO-220AB package	Higher current and lower R_DS(on), but larger gate charge (131 nC) and slower switching	Prefer for high-current, lower-frequency (<200 kHz) applications where conduction loss dominates

Compared with STP30NF20 and IRF1404PBF, IRF3707SPBF offers the optimal balance of 30 V rating, 12.5 mΩ on-resistance, and 19 nC gate charge - making it uniquely suited for high-frequency, medium-current telecom and computing power stages where both switching and conduction losses must be minimized.

Availability

IRF3707SPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and industrial motor drive inverters requiring stable component supply, long-term lifecycle support, and traceable lead-free sourcing.

Supply support for IRF3707SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon MOSFET innovation and reliability engineering.

The HEXFET Power MOSFET product line was originally developed by International Rectifier and acquired by Infineon in 2015; it targets high-efficiency, high-reliability power conversion in telecom infrastructure, computing, and industrial automation.

FAQ

Is IRF3707SPBF suitable for 4.5V logic-level gate drive?

Yes. With a gate threshold voltage range of 1.0–3.0 V and guaranteed R_DS(on) ≤ 17 mΩ at V_GS = 4.5 V, IRF3707SPBF supports direct drive from 4.5V microcontrollers or gate drivers without level-shifting. Its 8.2 nC gate-to-source charge further ensures fast turn-on under low-voltage conditions.

What is the maximum junction temperature and how does it affect R_DS(on)?

The absolute maximum junction temperature is +175°C. R_DS(on) increases linearly with temperature - typical normalized resistance rises to ~2.0× at 175°C versus 25°C. Derating curves in Figure 4 confirm this behavior, requiring thermal design to maintain T_J ≤ 150°C for sustained 62 A operation.

Can IRF3707SPBF replace IRF3707PBF in existing designs?

Yes - IRF3707SPBF is the lead-free (PbF) variant of IRF3707PBF, sharing identical electrical specifications, pinout, package (TO-220AB), and thermal performance. The "S" denotes same die and assembly process; only the termination plating differs (matte tin vs. lead-based), complying with RoHS Directive 2011/65/EU.

Does the body diode support continuous bidirectional current in synchronous rectification?

No - the body diode is integral and unidirectional (source-to-drain). In synchronous rectification, it conducts only during the off-time of the complementary switch. Its 31 A continuous source current rating and 248 A pulsed capability are validated for short-duration freewheeling, not steady-state reverse conduction.

IRF3707SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 62A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1990 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 87W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF3707SPBF FAQ

1.How can I place an order for IRF3707SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3707SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3707SPBF reliable?

The price and inventory of IRF3707SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3707SPBF is usually 5 days.

3.What payment methods are accepted for IRF3707SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3707SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3707SPBF?

IRF3707SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3707SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3707SPBF?

For technical support, including IRF3707SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3707SPBF requirements.

6.How does Aetrix verify that IRF3707SPBF is sourced from the original manufacturer or authorized distributors?

All IRF3707SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3707SPBF meets industry standards.

7.What is the process for return or replacement of IRF3707SPBF?

All IRF3707SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3707SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3707SPBF part is unused and in its original packaging.

Return procedure for IRF3707SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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