Infineon Technologies IRF3707Z

Overview

IRF3707Z from Infineon Technologies is an N-channel enhancement-mode HEXFET Power MOSFET optimized for high-frequency synchronous buck converters in computer processor power delivery. It delivers 30V V_DSS, 7.5 mΩ R_DS(on) at V_GS = 10 V, 9.7 nC total gate charge, and 230 A pulsed drain current - enabling low conduction loss and fast switching in compact VRM/VRD designs.

For engineers reviewing the IRF3707Z datasheet, IRF3707Z pinout, IRF3707Z application, or IRF3707Z equivalent, key selection criteria include its ultra-low gate impedance, fully characterized avalanche capability (E_AS = 150 mJ), body diode reverse recovery performance (Q_rr = 5.2–7.8 nC), and thermal resistance (R_θJC = 2.65 °C/W) for TO-220AB mounting.

Technical Context

This MOSFET employs a planar silicon process with optimized cell pitch and trench-free structure to achieve low R_DS(on) while maintaining robust unclamped inductive switching (UIS) capability. Its gate threshold voltage (V_GS(th) = 1.35–2.25 V) and negative temperature coefficient (−5.3 mV/°C) support stable parallel operation and predictable turn-on behavior across −55°C to +175°C junction range.

The device features a monolithic integrated body diode with 14–21 ns reverse recovery time and 1.0 V forward voltage at 17 A, enabling efficient freewheeling in synchronous rectification. Its C_iss/C_oss/C_rss values (1210 pF / 260 pF / 130 pF at V_DS = 15 V) are tuned for minimal Miller effect and reduced dv/dt-induced turn-on risk in high-side control configurations.

Key Specifications

Pinout & Package

IRF3707Z is packaged in TO-220AB - a through-hole, single-ended, insulated-tab package with copper leadframe, rated for 1.1 N·m mounting torque and 10 s soldering at 1.6 mm from case.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP30NF20 and IXTP10N50L2, IRF3707Z provides superior conduction efficiency, lower gate drive demand, and tighter thermal coupling - making it uniquely suited for high-density, high-efficiency 30 V-class synchronous buck stages where R_DS(on), Q_g, and Q_rr dominate system loss budgets.

Availability

IRF3707Z is available at Aetrix Electronics and suitable for server VRM design, GPU power delivery, and industrial PLC power rails requiring stable component supply and consistent parametric performance across production lots.

Supply support for IRF3707Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The IRF3707Z belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-current DC/DC conversion in computing and communications infrastructure where low R_DS(on), fast switching, and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRF3707Z supports 30 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This value reflects thermal limitation of the TO-220AB package rather than silicon capability, and requires adequate heatsinking to maintain case temperature at or below 100°C under sustained load.

Does IRF3707Z have a built-in body diode, and what are its key parameters?

Yes - IRF3707Z integrates a monolithic N-channel body diode with V_SD = 1.0 V at I_S = 17 A, t_rr = 14–21 ns, and Q_rr = 5.2–7.8 nC. These values are measured under standardized conditions (V_DD = 15 V, I_F = 17 A, di/dt = 100 A/µs, T_J = 25°C), and enable efficient synchronous rectification without external diodes in buck topologies.

Can IRF3707Z be used in parallel configurations, and what design considerations apply?

Yes - its negative V_GS(th) temperature coefficient (−5.3 mV/°C) promotes current sharing across paralleled devices. Key requirements include matched gate drive impedance (<5% variation), symmetrical PCB layout with identical trace lengths, and individual source resistors for current sensing. Thermal coupling between devices must also be uniform to prevent thermal runaway.

Is IRF3707Z compliant with RoHS and lead-free assembly standards?

Yes - the IRF3707ZPbF, IRF3707ZSPbF, and IRF3707ZLPbF variants are all lead-free and RoHS-compliant. The "PbF" suffix denotes lead-free plating, and the device supports standard reflow profiles including JEDEC J-STD-020D for MSL3 handling, with peak temperature tolerance up to 260°C for 10 seconds at 1.6 mm from case.