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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3707ZCSTRRP

Name: IRF3707ZCSTRRP
Brand: Infineon Technologies
SKU: IRF3707ZCSTRRP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3707ZCSTRRP

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF3707ZCSTRRP.pdf

Description:: MOSFET N-CH 30V 59A D2PAK

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Product details

Overview

IRF3707ZCSTRRP from Infineon Technologies is an N-channel enhancement-mode HEXFET Power MOSFET in D2PAK (TO-263) package, designed as a low-side synchronous rectifier or control FET in high-frequency DC/DC converters. It delivers 30 V V_DS, 7.5 mΩ R_DS(on) at V_GS = 10 V, 9.7 nC total gate charge, and supports 59 A continuous drain current at T_C = 25°C - enabling efficient power delivery in CPU VRMs and notebook adapters.

For engineers reviewing the IRF3707ZCSTRRP datasheet, IRF3707ZCSTRRP pinout, IRF3707ZCSTRRP application, or IRF3707ZCSTRRP equivalent, key selection criteria include its ultra-low R_DS(on) at 4.5 V drive, fully characterized avalanche capability, and optimized Q_gd/Q_gs1 ratio to suppress C_dv/dt turn-on in synchronous buck topologies.

Technical Context

This MOSFET employs planar silicon process technology with integrated body diode, optimized for unclamped inductive switching and clamped avalanche energy handling up to 57 mJ. Its gate threshold voltage (1.35–2.25 V) and negative temperature coefficient (−5.3 mV/°C) ensure stable turn-on behavior across −55°C to +175°C junction range.

The device exhibits low output capacitance (C_oss = 260 pF) and reverse transfer capacitance (C_rss = 130 pF), supporting fast switching at >1 MHz frequencies. Its linear SOA is limited by R_DS(on) above 100 µs pulse width, with thermal resistance R_θJC = 2.65 °C/W enabling high-power density PCB mounting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum blocking voltage compatible with 24 V input rails and transient overvoltage margin in point-of-load converters
R_DS(on) @ V_GS = 10 V	7.5 mΩ typ - enables ≤1.2 W conduction loss at 40 A RMS in 12 V→1.2 V VRM stages
Q_g	9.7 nC - determines gate driver current requirement (e.g., 1 A peak for 10 ns rise time)
I_D @ T_C = 25°C	59 A - supports high-current single-phase CPU core power stages without forced air cooling
E_AS	57 mJ - withstands single-pulse inductive energy during startup/fault in synchronous buck without failure
V_GS(th)	1.8 V typ - ensures reliable turn-on with 3.3 V or 5 V logic-level gate drivers
C_iss	1210 pF - defines Miller plateau duration and impacts gate drive loop stability

Pinout & Package

IRF3707ZCSTRRP uses the surface-mount D2PAK (TO-263) package with exposed drain pad for thermal performance. The three terminals are arranged in standard G-D-S order (left-to-right when viewing top marking side).

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Receives PWM signal; low input capacitance (C_iss) reduces driver loading
Drain (D)	High-side switch node connection	Exposed copper pad soldered to PCB ground plane for thermal dissipation and low-inductance return path
Source (S)	Power return reference	Connected to power ground; serves as common reference for gate drive and current sensing

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V V_GS	9.5 mΩ max - enables direct drive from 5 V microcontrollers or PWM controllers without level-shifting
Fully characterized avalanche rating	57 mJ E_AS - eliminates need for external snubbers in hard-switched synchronous buck designs
Optimized Q_gd/Q_gs1 ratio	3.4 nC / 2.8 nC ≈ 1.2 - minimizes risk of spurious C_dv/dt turn-on during high dV/dt node transitions
Low reverse recovery charge (Q_rr)	5.2–7.8 nC - reduces shoot-through losses and EMI in synchronous rectification mode

Applications

Server CPU Voltage Regulator

Notebook DC/DC Converter

Use Scenario: High-current, multi-phase buck converter supplying 1.0–1.3 V to Intel/AMD server CPUs under dynamic load transients.

IC Role / Device Role: Low-side synchronous FET conducting during bottom-half switching cycle; handles 40–60 A RMS current.

Use Value: 7.5 mΩ R_DS(on) limits conduction loss to <1.5 W per phase, reducing thermal stress on 6-layer PCBs.

Use Scenario: Single-phase 19 V input → 5 V/3.3 V output converter in ultrabook power adapter subsystems.

IC Role / Device Role: Control FET in primary-side switching stage; operates at 300–500 kHz with 50% duty cycle.

Use Value: 9.7 nC Q_g enables efficient drive with low-cost SOT-23 gate drivers, cutting BOM cost vs. discrete driver ICs.

Industrial PLC Power Module

Automotive Infotainment DC/DC

Use Scenario: 24 V industrial rail converted to 3.3 V/5 V for FPGA and MCU logic supplies in harsh ambient conditions.

IC Role / Device Role: Secondary-side synchronous rectifier in isolated flyback or forward converter; rated for −40°C to +105°C operation.

Use Value: 175°C max T_J and −55°C to +175°C T_STG support extended temperature qualification without derating.

Use Scenario: 12 V automotive battery input stepped down to 5 V USB power and 3.3 V SoC supply in head unit designs.

IC Role / Device Role: High-efficiency buck controller FET; must survive load dump (40 V transient) and cold crank (4.5 V min).

Use Value: 30 V V_DS with 230 A pulsed I_DM provides margin against ISO 7637-2 pulses and cranking dips.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3705ZPBF	R_DS(on) = 12 mΩ @ 4.5 V; higher gate charge (18 nC); same D2PAK package	Better 4.5 V drive margin but lower efficiency at high current due to higher R_DS(on)	Select when gate drive voltage is constrained to ≤4.5 V and peak current <30 A
STB30NF20L	200 V V_DS; R_DS(on) = 30 mΩ @ 10 V; TO-263 package; no specified Q_rr	Higher voltage rating sacrifices R_DS(on) and Q_g efficiency for industrial isolation compliance	Select only when system requires >60 V blocking capability and can accept 4× conduction loss

Compared with IRL3705ZPBF and STB30NF20L, IRF3707ZCSTRRP offers optimal balance of low R_DS(on), moderate Q_g, and verified Q_rr for high-frequency synchronous buck designs - making it preferred for CPU VRMs and portable power where efficiency and thermal density are critical.

Availability

IRF3707ZCSTRRP is available at Aetrix Electronics and suitable for server CPU voltage regulators, notebook DC/DC converters, and industrial PLC power modules requiring stable component supply and long-term production continuity.

Supply support for IRF3707ZCSTRRP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing and consumer power systems.

FAQ

Is IRF3707ZCSTRRP suitable for 3.3 V gate drive?

No - its typical V_GS(th) is 1.8 V, but R_DS(on) rises sharply below 4.5 V. At 3.3 V, R_DS(on) exceeds 25 mΩ, increasing conduction loss by >3×. It requires ≥4.5 V gate drive for specified performance, and 10 V for minimum R_DS(on).

What is the maximum recommended PCB copper area for thermal relief?

For optimal R_θJC = 2.65 °C/W, the exposed drain pad must be soldered to ≥400 mm² (20 mm × 20 mm) of 2-oz copper on inner layers, with ≥6 thermal vias (0.3 mm diameter) connecting to internal ground planes. Smaller areas increase junction temperature by up to 15°C at 50 W dissipation.

Does IRF3707ZCSTRRP have avalanche ruggedness certification?

Yes - it is fully characterized for unclamped inductive switching per JEDEC JESD24-1. Single-pulse avalanche energy is tested and guaranteed at 57 mJ (T_J = 25°C), with waveform parameters defined in Fig. 12a–c of the official datasheet.

Can IRF3707ZCSTRRP replace IRF3707ZCPBF in existing designs?

Yes - both share identical electrical specs, D2PAK package, and pinout. IRF3707ZCSTRRP is the tape-and-reel version of IRF3707ZCPBF; differences are only in packaging format and reel quantity (2000 pcs vs. tube). No layout or thermal changes are required.

IRF3707ZCSTRRP Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 59A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.5mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1210 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 57W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF3707ZCSTRRP FAQ

1.How can I place an order for IRF3707ZCSTRRP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3707ZCSTRRP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3707ZCSTRRP reliable?

The price and inventory of IRF3707ZCSTRRP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3707ZCSTRRP is usually 5 days.

3.What payment methods are accepted for IRF3707ZCSTRRP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3707ZCSTRRP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3707ZCSTRRP?

IRF3707ZCSTRRP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3707ZCSTRRP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3707ZCSTRRP?

For technical support, including IRF3707ZCSTRRP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3707ZCSTRRP requirements.

6.How does Aetrix verify that IRF3707ZCSTRRP is sourced from the original manufacturer or authorized distributors?

All IRF3707ZCSTRRP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3707ZCSTRRP meets industry standards.

7.What is the process for return or replacement of IRF3707ZCSTRRP?

All IRF3707ZCSTRRP units undergo pre-shipment inspection (PSI). If there is an issue with IRF3707ZCSTRRP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3707ZCSTRRP part is unused and in its original packaging.

Return procedure for IRF3707ZCSTRRP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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