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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3707ZPBF

Name: IRF3707ZPBF
Brand: Infineon Technologies
SKU: IRF3707ZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3707ZPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF3707ZPBF.pdf

Description:: MOSFET N-CH 30V 59A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF3707ZPBF from Infineon Technologies is a 30V, 59A N-channel HEXFET Power MOSFET in TO-262 (I²PAK) package, optimized as a low-side synchronous rectifier in high-frequency DC/DC buck converters for CPU power delivery. It delivers 7.5 mΩ R_DS(on) at V_GS = 10 V, 9.7 nC total gate charge, and 14–21 ns reverse recovery time with integrated body diode.

For engineers reviewing the IRF3707ZPBF datasheet, IRF3707ZPBF pinout, IRF3707ZPBF application, or IRF3707ZPBF equivalent, key selection criteria include its ultra-low gate impedance, fully characterized avalanche capability (23 mJ E_AS), and thermal resistance of 2.65 °C/W (junction-to-case), critical for thermally constrained server and notebook VRM designs.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-free die design to achieve low R_DS(on) while maintaining robust unclamped inductive switching (UIS) performance. Its gate threshold voltage (1.35–2.25 V) and negative temperature coefficient (−5.3 mV/°C) enable stable parallel operation under thermal stress.

The device features a fully rated body diode with 5.2–7.8 nC Q_rr, 14–21 ns t_rr, and 1.0 V V_SD at 17 A, supporting zero-voltage switching (ZVS) transitions in synchronous buck topologies. Its C_iss/C_oss/C_rss values (1210/260/130 pF at V_DS = 15 V) are tuned for minimal switching loss at 300–1000 kHz operating frequencies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports input rails up to 24 V with 25 % margin for transient overshoot in CPU core supplies.
R_DS(on) max @ 10 V	9.5 mΩ - Limits conduction loss to ≤1.2 W at 35 A RMS in 12 V → 1.2 V buck stage.
Q_g	9.7 nC - Enables fast turn-on with ≤20 ns delay using 1-A gate driver; reduces switching loss in high-f_SW designs.
I_D @ T_C = 25°C	59 A - Sustains peak load current in single-phase VRMs delivering ≥60 W to modern processors.
E_AS	23 mJ - Withstands single-pulse inductive energy from 15 V, 17 A loads without failure during startup or fault events.
t_r/t_f	41 ns / 3.6 ns - Asymmetric switching profile minimizes cross-conduction risk in synchronous FET position.
R_θJC	2.65 °C/W - Allows 45 °C junction rise above case at 17 W dissipation, compatible with standard heatsink mounting.

Pinout & Package

IRF3707ZPBF uses the TO-262 (I²PAK) package: 3-pin, surface-mountable variant of TO-220 with isolated drain tab, lead-free finish, and 1.1 N·m mounting torque rating.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Power output node / Heat sink interface	Electrically connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits.
Source	Return path for load current / Reference for gate drive	Common node for body diode cathode and source terminal; defines local ground for gate control loop.
Gate	Control input for channel modulation	High-impedance MOS input requiring <100 nA leakage; sensitive to dV/dt coupling-requires tight layout to minimize Q_gd-induced shoot-through.

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V	12.5 mΩ - Enables direct drive from 5 V PWM controllers without level-shifting, reducing BOM count.
Fully characterized avalanche	23 mJ E_AS at T_J = 25°C - Eliminates need for external snubbers in non-isolated buck converters with high di/dt.
Ultra-low gate impedance	Q_gd/Q_gs1 = 3.4/2.8 ≈ 1.2 - Minimizes C_dv/dt turn-on risk when used as synchronous FET in high-dV/dt nodes.
Lead-free D2Pak-compatible footprint	TO-262 package with same PCB land pattern as IRF3707ZSPbF (TO-220AB) - Enables drop-in replacement across form factors.

Applications

Server VRM Phase Legs

Notebook CPU Power Stages

Use Scenario: Single-phase 12 V → 1.05 V buck converter supplying Intel Core i9 processor under 120 W peak load.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switching at 500 kHz, commutating current during bottom-half of PWM cycle.

Use Value: 7.5 mΩ R_DS(on) reduces conduction loss by 38 % vs. legacy 12 mΩ MOSFETs, improving full-load efficiency from 89.2 % to 91.5 %.

Use Scenario: Dual-phase 19 V → 1.2 V buck regulator in ultrabook platform with strict thermal envelope (<45 °C board temp).

IC Role / Device Role / Timing Role: High-current synchronous FET handling 30 A RMS per phase with forced-air cooling.

Use Value: 2.65 °C/W R_θJC enables 42 °C junction rise at 15 W dissipation-within safe limit for 150 °C max T_J.

Industrial PLC I/O Power Supplies

Automotive ADAS Domain Controllers

Use Scenario: 24 V input buck converter powering FPGA and DDR4 memory on programmable logic controller backplane.

IC Role / Device Role / Timing Role: Primary power switch in 300 kHz fixed-frequency converter with 100 µs overcurrent response requirement.

Use Value: 23 mJ E_AS withstands 100 A surge for 10 µs during short-circuit events-meets IEC 61000-4-5 Level 4 immunity.

Use Scenario: 12 V → 1.8 V point-of-load supply for NVIDIA Orin SoC in autonomous driving compute module.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck with adaptive frequency scaling (200–800 kHz).

Use Value: 14–21 ns t_rr and 5.2–7.8 nC Q_rr reduce body-diode conduction loss by 65 % vs. discrete Schottky solution, lowering thermal stress on adjacent SoC.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3705ZPBF	R_DS(on) = 12 mΩ @ 4.5 V; Q_g = 62 nC; TO-262 package	Higher gate charge increases driver loss; better suited for lower-frequency (<200 kHz), higher-V_GS drive systems	Select when gate drive voltage is limited to 4.5 V and switching frequency is below 250 kHz.
IPB017N04LG	R_DS(on) = 1.7 mΩ @ 10 V; Q_g = 33 nC; TSDSON-8 package	Lower R_DS(on) but requires PCB-level thermal vias; no isolated tab for heatsinking	Choose for ultra-high-efficiency, space-constrained designs where thermal management is via PCB copper, not external heatsink.

Compared with IRF3707ZPBF, IRL3705ZPBF trades higher switching loss for enhanced 4.5 V drive compatibility, while IPB017N04LG delivers superior conduction efficiency at the cost of mechanical thermal interface flexibility and higher gate drive demand.

Availability

IRF3707ZPBF is available at Aetrix Electronics and suitable for server VRM phase legs, notebook CPU power stages, and industrial PLC I/O power supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF3707ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The HEXFET Power MOSFET product line targets high-efficiency, high-reliability power conversion in computing, industrial, and automotive applications-designed specifically for synchronous rectification, motor control, and DC/DC regulation where low R_DS(on) and robust UIS performance are mandatory.

FAQ

What is the maximum continuous drain current for IRF3707ZPBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 42 A, derated linearly from 59 A at 25°C using the 0.38 W/°C derating factor. This value assumes proper heatsinking to maintain case temperature at or below 100°C and accounts for increased R_DS(on) at elevated junction temperatures.

Can IRF3707ZPBF be used as a high-side switch in a buck-boost topology?

No-IRF3707ZPBF is an N-channel MOSFET requiring gate voltage ≥ V_DS + V_GS(th) for full enhancement. In high-side configuration, it needs a floating gate driver with bootstrap or isolated supply. Its design intent and characterization focus on low-side synchronous rectification, not high-side switching.

Does IRF3707ZPBF have AEC-Q101 qualification for automotive use?

No-IRF3707ZPBF is not AEC-Q101 qualified. While its absolute maximum ratings (T_J = −55 to +175°C) meet automotive temperature ranges, it lacks the required stress testing, failure analysis, and documentation for automotive-grade qualification. For ADAS applications, use Infineon's AEC-Q101 qualified variants like IPB180N04S4-02.

How does the body diode's reverse recovery charge affect synchronous buck efficiency?

With Q_rr = 5.2–7.8 nC, the body diode injects stored charge into the high-side switch during commutation, increasing its turn-off loss and generating heat in Q1. In 500 kHz operation, this contributes ~0.8 W extra loss per phase-making Q_rr a critical parameter when selecting the low-side FET for high-efficiency designs.

IRF3707ZPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 59A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.5mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1210 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 57W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF3707ZPBF FAQ

1.How can I place an order for IRF3707ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3707ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3707ZPBF reliable?

The price and inventory of IRF3707ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3707ZPBF is usually 5 days.

3.What payment methods are accepted for IRF3707ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3707ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3707ZPBF?

IRF3707ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3707ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3707ZPBF?

For technical support, including IRF3707ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3707ZPBF requirements.

6.How does Aetrix verify that IRF3707ZPBF is sourced from the original manufacturer or authorized distributors?

All IRF3707ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3707ZPBF meets industry standards.

7.What is the process for return or replacement of IRF3707ZPBF?

All IRF3707ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3707ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3707ZPBF part is unused and in its original packaging.

Return procedure for IRF3707ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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