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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3707ZS

Name: IRF3707ZS
Brand: Infineon Technologies
SKU: IRF3707ZS
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3707ZS

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF3707ZS.pdf

Description:: MOSFET N-CH 30V 59A D2PAK

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Product details

Overview

IRF3707ZS from Infineon Technologies is a 30V, 59A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-frequency synchronous buck converters in CPU power delivery. It features 7.5 mΩ R_DS(on) at V_GS = 10 V, 9.7 nC total gate charge, and fully characterized avalanche capability (E_AS = 150 mJ).

For engineers reviewing the IRF3707ZS datasheet, IRF3707ZS pinout, IRF3707ZS application, or IRF3707ZS equivalent, key selection criteria include low R_DS(on) at 4.5V drive, ultra-low gate impedance for fast switching, and robust body diode recovery (Q_rr = 5.2–7.8 nC, t_rr = 14–21 ns) in hard-switched DC/DC topologies.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with integrated body diode, designed for unidirectional high-current switching in non-isolated buck regulators. Its gate threshold voltage (V_GS(th) = 1.35–2.25 V) enables 4.5 V logic-level drive compatibility, while temperature-stable R_DS(on) (±20% over −55°C to +175°C) supports wide thermal operating margins.

The device exhibits low Crss (130 pF) and Q_gd/Q_gs1 ratio (3.4/2.8 ≈ 1.2), minimizing C_dv/dt turn-on risk in high-dV/dt synchronous FET positions. Avalanche energy rating (E_AS = 150 mJ, I_AR = 42 A) is validated under clamped inductive load conditions per JEDEC JESD24-11.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage for 12 V input bus applications with margin
R_DS(on) max @ 10 V	9.5 mΩ - Conduction loss ≤ 33 W at 59 A continuous (T_C = 25°C)
Q_g total	9.7 nC - Gate drive energy requirement for 1 MHz switching with 12 V gate swing
I_D @ T_C = 100°C	30 A - Sustained current capability in thermally constrained PCB-mount environments
t_rr / Q_rr	14–21 ns / 5.2–7.8 nC - Fast body diode recovery enabling efficient synchronous rectification
R_θJC	2.65 °C/W - Thermal path efficiency from junction to TO-220AB case surface
E_AS	150 mJ - Single-pulse avalanche energy handling without failure at T_J = 25°C

Pinout & Package

IRF3707ZS is housed in a TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole configuration, and screw-mount compatible flange.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current return path to ground/bus	Electrically connected to metal tab; requires insulating washer if mounted to grounded heatsink
Source	Reference node for gate control and current sensing	Low-inductance connection point for source resistor or Kelvin sense routing
Gate	Control terminal for channel modulation	High-impedance input requiring <10 Ω series resistance to suppress ringing in 1 MHz+ operation

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	12.5 mΩ - Enables direct drive from 5 V PWM controllers without level-shifting
Low Q_gd/Q_gs1 ratio	1.21 - Reduces susceptibility to spurious turn-on during high dV/dt node transitions
Fully characterized avalanche	150 mJ E_AS - Eliminates need for external snubbers in inductive load switching
Optimized body diode	Q_rr = 5.2–7.8 nC - Minimizes reverse recovery losses in synchronous FET position
Lead-free D2Pak-compatible variant	IRF3707ZSPbF - Same die in surface-mount package for automated assembly scalability

Applications

Server CPU VRM

Laptop DC/DC Converter

Use Scenario: High-density 12 V → 1.0–1.8 V buck converter delivering up to 120 A to dual-core processors.

IC Role / Device Role / Timing Role: Synchronous FET (low-side switch) with fast body diode recovery and low conduction loss.

Use Value: Enables >92% efficiency at 1 MHz switching with minimal thermal derating due to 2.65 °C/W R_θJC.

Use Scenario: Compact 19 V → 5 V/3.3 V secondary regulation for USB-C PD and system rails.

IC Role / Device Role / Timing Role: Control FET (high-side switch) driven by integrated controller with 4.5 V gate output.

Use Value: 12.5 mΩ R_DS(on) at 4.5 V ensures full-rated current delivery without gate boosting circuitry.

Industrial PLC Power Module

Automotive ADAS Camera Power Supply

Use Scenario: 24 V input buck regulator powering FPGA and I/O banks in harsh ambient (−40°C to +85°C).

IC Role / Device Role / Timing Role: Primary power switch with guaranteed avalanche performance under load dump transients.

Use Value: 150 mJ E_AS withstands repetitive 100 V/10 ms surges without degradation.

Use Scenario: 12 V → 3.3 V point-of-load supply for image sensor and ISP in automotive camera ECU.

IC Role / Device Role / Timing Role: Low-noise synchronous FET with minimized Q_rr-induced EMI during diode commutation.

Use Value: 14–21 ns t_rr reduces switching node ringing amplitude by ≥40% vs. standard MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP30NF20	200 V V_DSS, 30 A I_D, 45 mΩ R_DS(on) - higher voltage rating but 5× higher on-resistance	Designed for 48 V industrial systems, not optimized for 12 V CPU VRMs	Select only when higher blocking voltage is required; avoid for high-current, low-V_DS applications
IRL3705Z	55 A I_D, 12 mΩ R_DS(on) @ 4.5 V, 21 nC Q_g - lower gate drive sensitivity but higher switching loss	Targeted at 100 kHz–500 kHz motor drives, not MHz-class synchronous buck	Prefer for cost-sensitive, lower-frequency designs where gate drive power is less critical

Compared with STP30NF20 and IRL3705Z, IRF3707ZS delivers superior high-frequency efficiency in 12 V input buck converters due to its optimized Q_g/R_DS(on) ratio (0.32 nC/mΩ) and fast body diode, making it the preferred choice for CPU/GPU VRMs demanding >1 MHz operation.

Availability

IRF3707ZS is available at Aetrix Electronics and suitable for server CPU VRMs, laptop DC/DC converters, and industrial PLC power modules requiring stable component supply and long-term lifecycle support.

Supply support for IRF3707ZS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET Power MOSFET product line targets high-efficiency, high-reliability switching in computing, telecom, and automotive power conversion, with emphasis on low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

Is IRF3707ZS suitable for 4.5 V gate drive in synchronous buck topologies?

Yes. IRF3707ZS guarantees R_DS(on) ≤ 12.5 mΩ at V_GS = 4.5 V and I_D = 17 A, enabling direct interface with 5 V PWM controllers like TI UCC28220 or ON Semi NCP3101. Its 1.35–2.25 V gate threshold ensures reliable turn-on with margin across temperature and process variation.

What is the maximum continuous drain current at 85°C case temperature?

At T_C = 85°C, the maximum continuous drain current is 42 A, derived from linear derating of the 59 A rating at 25°C using the 0.38 W/°C derating factor and R_DS(on) thermal coefficient. This value assumes adequate heatsinking and 2.65 °C/W R_θJC path.

Does IRF3707ZS have a qualified AEC-Q101 rating for automotive use?

No. IRF3707ZS is not AEC-Q101 qualified. While its operating junction temperature range (−55°C to +175°C) meets automotive ambient requirements, it lacks the stress test validation (HTOL, TC, HTRB) required for automotive safety-critical applications. For such use, consider Infineon's AEC-Q101-certified IPA50R30CP or IPP60R099C7.

How does the body diode recovery performance compare to standard MOSFETs?

IRF3707ZS achieves t_rr = 14–21 ns and Q_rr = 5.2–7.8 nC at I_F = 17 A, V_DD = 15 V, and di/dt = 100 A/µs - approximately 40% faster and 35% lower Q_rr than legacy TO-220 MOSFETs like IRFZ44N. This directly reduces synchronous rectifier switching loss and EMI generation.

IRF3707ZS Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 59A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.5mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1210 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 57W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF3707ZS FAQ

1.How can I place an order for IRF3707ZS through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3707ZS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3707ZS reliable?

The price and inventory of IRF3707ZS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3707ZS is usually 5 days.

3.What payment methods are accepted for IRF3707ZS?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3707ZS transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3707ZS?

IRF3707ZS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3707ZS order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3707ZS?

For technical support, including IRF3707ZS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3707ZS requirements.

6.How does Aetrix verify that IRF3707ZS is sourced from the original manufacturer or authorized distributors?

All IRF3707ZS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3707ZS meets industry standards.

7.What is the process for return or replacement of IRF3707ZS?

All IRF3707ZS units undergo pre-shipment inspection (PSI). If there is an issue with IRF3707ZS, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3707ZS part is unused and in its original packaging.

Return procedure for IRF3707ZS:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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