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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3707ZSTRL

Name: IRF3707ZSTRL
Brand: Infineon Technologies
SKU: IRF3707ZSTRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3707ZSTRL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF3707ZSTRL.pdf

Description:: MOSFET N-CH 30V 59A D2PAK

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Product details

Overview

IRF3707ZSTRL from Infineon Technologies is a 30V, 59A N-channel HEXFET Power MOSFET in D2PAK (TO-263) package, optimized as a low-side synchronous rectifier in high-frequency DC/DC buck converters for CPU core power delivery. It features 7.5 mΩ R_DS(on) at V_GS = 10 V, 9.7 nC total gate charge, and 100% rated avalanche energy of 50 mJ, enabling efficient switching with minimized conduction and gate-drive losses.

For engineers reviewing the IRF3707ZSTRL datasheet, IRF3707ZSTRL pinout, IRF3707ZSTRL application, or IRF3707ZSTRL equivalent, key selection criteria include its 4.5V gate-threshold compatibility with PWM controllers, ultra-low gate impedance for fast turn-on/turn-off, and validated performance in 500 kHz–1 MHz synchronous buck topologies under 85°C case temperature.

Technical Context

This MOSFET employs planar silicon process technology with integral body diode and fully characterized unclamped inductive switching (UIS) capability. Its gate threshold voltage (1.35–2.25 V) and negative temperature coefficient (−5.3 mV/°C) ensure stable turn-on behavior across −55°C to +175°C junction range.

The device's low output charge (Q_oss = 6.2 nC) and reverse recovery charge (Q_rr = 5.2–7.8 nC) directly reduce switching node ringing and cross-conduction risk in synchronous FET position, while its 130 pF Cr_ss supports robust dv/dt immunity when used with standard gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in point-of-load converters
R_DS(on) max @ 10 V	9.5 mΩ - Limits conduction loss to ≤2.1 W at 46 A RMS in 12 V→1.2 V, 40 A load
Q_g	9.7 nC - Enables full enhancement with ≤1 A peak gate drive current at 1 MHz switching
I_D @ T_C = 100°C	42 A - Sustains continuous operation in thermally constrained PCB-mount applications
E_AS	50 mJ - Withstands single-pulse inductive energy without failure during startup or overload
Q_rr	5.2–7.8 nC - Reduces shoot-through risk and associated losses in synchronous rectification mode
R_θJC	2.65 °C/W - Enables direct heatsink mounting for thermal management in high-power density designs

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S), lead-free and RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives PWM signal; low input capacitance (C_iss = 1210 pF) minimizes driver loading
D (Drain)	High-side switch node connection	Exposed metal tab - electrically tied to drain; must be isolated from heatsink unless referenced to same potential
S (Source)	Power return path	Common reference for gate drive and current sensing; connects to low-side shunt or controller ground

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	12.5 mΩ - Supports logic-level gate drive from standard PWM ICs without level-shifting
Fully characterized avalanche rating	50 mJ E_AS - Eliminates need for external snubbers in hard-switched inductive loads
Low Q_gd/Q_gs1 ratio	3.4/2.8 ≈ 1.2 - Reduces susceptibility to dv/dt-induced turn-on in high-dV/dt synchronous nodes
Optimized body diode	t_rr = 14–21 ns, Q_rr = 5.2–7.8 nC - Minimizes reverse recovery loss and EMI in discontinuous conduction mode

Applications

Server VRM Core Power

Laptop CPU Voltage Regulator

Use Scenario: 12 V input → 1.0–1.3 V output, 40–60 A load, 500 kHz–1 MHz switching frequency.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in dual-MOSFET buck stage; replaces Schottky diode to reduce conduction loss.

Use Value: Achieves >92% efficiency at full load by cutting R_DS(on)-based loss to <1.5 W versus >4 W with diode solution.

Use Scenario: Thin-profile motherboard with limited airflow; ambient up to 70°C, peak current bursts to 50 A.

IC Role / Device Role / Timing Role: Output FET in compact 2-phase interleaved buck converter; thermally coupled to copper pour.

Use Value: Junction temperature stays below 130°C due to 2.65 °C/W R_θJC and low Q_g, avoiding thermal throttling.

Industrial PLC I/O Power Supply

Automotive ADAS Domain Controller

Use Scenario: 24 V bus → 3.3 V/5 V auxiliary rail; subjected to load dump transients and wide temperature cycling.

IC Role / Device Role / Timing Role: Primary switching FET in isolated flyback secondary synchronous rectifier stage.

Use Value: Rated avalanche energy absorbs 100 V/50 ms transients without derating; −55°C to +175°C T_J rating ensures reliability.

Use Scenario: 12 V battery input → 1.1 V GPU core supply; operates in vibration-prone, sealed enclosure with no forced cooling.

IC Role / Device Role / Timing Role: High-current synchronous FET in multi-phase buck regulator powering vision processor.

Use Value: Low Q_rr prevents shoot-through during rapid phase shedding; qualified per AEC-Q101 stress test conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3707ZPBF	R_DS(on) = 12.5 mΩ @ 4.5 V; higher gate charge (12.5 nC); TO-220AB package	Lower switching frequency suitability (<300 kHz); requires mechanical mounting and heatsink	Preferred where cost-sensitive, lower-frequency, through-hole assembly is required
STL30DN6LF7AG	30 V, 30 A; R_DS(on) = 10.5 mΩ @ 4.5 V; DFN5x6 package; no avalanche rating	Not rated for unclamped inductive switching; unsuitable for high-energy transient environments	Selected only for space-constrained, low-energy consumer applications with strict footprint limits

Compared with IRL3707ZPBF and STL30DN6LF7AG, IRF3707ZSTRL delivers superior thermal performance via D2PAK's 2.65 °C/W R_θJC, verified avalanche ruggedness for industrial reliability, and optimal Q_g/Q_gd balance for high-frequency synchronous rectification without added gate protection circuitry.

Availability

IRF3707ZSTRL is available at Aetrix Electronics and suitable for server VRMs, laptop CPU regulators, industrial PLC power supplies, and automotive ADAS domain controllers requiring stable component supply and long-term production continuity.

Supply support for IRF3707ZSTRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The HEXFET Power MOSFET product line targets high-efficiency, high-reliability switching applications in computing, telecom, and automotive power conversion systems, with emphasis on low R_DS(on), fast switching, and ruggedness under real-world stress conditions.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRF3707ZSTRL supports 42 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating from the 59 A rating at 25°C and reflects safe operation with adequate heatsinking in high-ambient environments.

Is IRF3707ZSTRL suitable for 4.5 V gate drive in logic-level applications?

Yes - it delivers 12.5 mΩ R_DS(on) at V_GS = 4.5 V, confirmed in the Static Characteristics table. Its 1.35–2.25 V gate threshold enables reliable enhancement with standard 3.3 V or 5 V PWM controllers, eliminating need for gate boosters in most buck converter designs.

Does this MOSFET include an integrated body diode, and what are its recovery characteristics?

Yes - it integrates a monolithic p-n junction body diode with t_rr = 14–21 ns and Q_rr = 5.2–7.8 nC at I_F = 17 A, T_J = 25°C. These values are measured under standardized conditions (di/dt = 100 A/µs, V_DD = 15 V) and enable predictable synchronous rectification behavior without external diode supplementation.

Can IRF3707ZSTRL be used in avalanche-mode operation, and what is its rated energy?

Yes - it is fully characterized for unclamped inductive switching with a rated single-pulse avalanche energy (E_AS) of 50 mJ at T_J = 25°C. This rating is validated per JEDEC JESD24-11 and allows safe operation during overcurrent events without external clamping components in properly designed layouts.

IRF3707ZSTRL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 59A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.5mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1210 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 57W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF3707ZSTRL FAQ

1.How can I place an order for IRF3707ZSTRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3707ZSTRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3707ZSTRL reliable?

The price and inventory of IRF3707ZSTRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3707ZSTRL is usually 5 days.

3.What payment methods are accepted for IRF3707ZSTRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3707ZSTRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3707ZSTRL?

IRF3707ZSTRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3707ZSTRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3707ZSTRL?

For technical support, including IRF3707ZSTRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3707ZSTRL requirements.

6.How does Aetrix verify that IRF3707ZSTRL is sourced from the original manufacturer or authorized distributors?

All IRF3707ZSTRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3707ZSTRL meets industry standards.

7.What is the process for return or replacement of IRF3707ZSTRL?

All IRF3707ZSTRL units undergo pre-shipment inspection (PSI). If there is an issue with IRF3707ZSTRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3707ZSTRL part is unused and in its original packaging.

Return procedure for IRF3707ZSTRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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