Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3707ZSTRLPBF

Name: IRF3707ZSTRLPBF
Brand: Infineon Technologies
SKU: IRF3707ZSTRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF3707ZSTRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF3707ZSTRLPBF.pdf

Description:: MOSFET N-CH 30V 59A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,955

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF3707ZSTRLPBF from Infineon Technologies is a 30V, 59A N-channel HEXFET Power MOSFET in D2PAK (TO-263) package, optimized as a synchronous rectifier or control FET in high-frequency DC/DC converters. It delivers 7.5 mΩ R_DS(on) at V_GS = 10 V, 9.7 nC total gate charge, and supports 230 A pulsed drain current - enabling efficient power delivery in CPU VRMs and point-of-load regulators.

For engineers reviewing the IRF3707ZSTRLPBF datasheet, IRF3707ZSTRLPBF pinout, IRF3707ZSTRLPBF application, or IRF3707ZSTRLPBF equivalent, key selection criteria include its low R_DS(on) at 4.5 V V_GS, fully characterized avalanche capability, ultra-low gate impedance, and thermal resistance of 2.65 °C/W (junction-to-case), critical for thermally constrained synchronous buck stages.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with integral body diode, designed specifically for unidirectional high-current switching in non-isolated DC/DC topologies. Its gate threshold voltage (1.35–2.25 V) and negative temperature coefficient (−5.3 mV/°C) enable stable turn-on behavior across −55°C to +175°C junction range.

The device features tightly specified dynamic parameters: Q_gd/Q_gs1 ratio ≤ 1.22 (3.4 nC / 2.8 nC), minimizing C_dv/dt induced turn-on risk in high-dV/dt synchronous nodes; Q_rr = 5.2–7.8 nC and t_rr = 14–21 ns support fast body-diode commutation without excessive shoot-through loss in dual-FET configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient overvoltage margins in server and telecom POL converters.
R_DS(on) max @ 10 V	9.5 mΩ - Ensures ≤ 33 W conduction loss at 59 A DC, critical for maintaining <1% efficiency penalty in high-current VRMs.
Q_g total	9.7 nC - Enables fast switching with moderate gate drive strength (e.g., 1 A peak), reducing transition losses below 500 kHz operation.
I_D @ T_C = 25°C	59 A - Supports continuous output currents up to 60 A in PCB-mounted D2PAK layout with adequate heatsinking.
R_θJC	2.65 °C/W - Allows direct thermal interface to heatsink or copper plane, enabling junction temperatures ≤125°C under 40 W dissipation.
E_AS	150 mJ - Rated single-pulse avalanche energy permits safe operation during inductive load transients without external snubbers.
Q_rr	5.2–7.8 nC - Low reverse recovery charge minimizes cross-conduction loss when used as synchronous rectifier alongside control FET.

Pinout & Package

IRF3707ZSTRLPBF is housed in a surface-mount D2PAK (TO-263) package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard G-D-S order (left-to-right when viewed from top with marking side up).

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Receives voltage-controlled signal to modulate channel conductivity; low input capacitance (C_iss = 1210 pF) reduces driver loading.
Drain (D)	High-side current path	Connected to exposed metal tab - must be electrically and thermally tied to PCB ground plane or heatsink; carries full load current.
Source (S)	Reference node	Serves as return path for drain current and gate drive reference; low-inductance layout essential to suppress ringing in high-dI/dt applications.

Key Features

Feature	Design Value
Low R_DS(on) @ 4.5 V	12.5 mΩ - Enables robust gate drive from 5 V controllers (e.g., Intel VR13/VR14 PWM ICs) without sacrificing conduction efficiency.
Fully characterized avalanche	Rated E_AS = 150 mJ, I_AR = 30 A - Guarantees ruggedness against inductive switching stress without derating or external protection.
Ultra-low gate impedance	Q_gd/Q_gs1 ≈ 1.22 - Reduces susceptibility to parasitic turn-on in high-dV/dt synchronous nodes, improving system reliability.
Lead-free & RoHS compliant	Meets JEDEC J-STD-020 reflow profile - supports automated SMT assembly with peak temperature up to 260°C for 10 seconds.
Thermally enhanced D2PAK	R_θJA (PCB mount) = 40 °C/W - Achieves higher power density than TO-220 alternatives without requiring bolted heatsinks.

Applications

Server CPU Voltage Regulator

Telecom Point-of-Load Converter

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.8 V to x86 or ARM processors in rack-mounted servers.

IC Role / Device Role / Timing Role: Used as low-side synchronous rectifier (S-FET) in each phase, conducting during bottom-switch conduction interval.

Use Value: 7.5 mΩ R_DS(on) and 5.2 nC Q_rr reduce conduction and commutation losses, enabling >92% efficiency at 50 A per phase.

Use Scenario: 12 V input to 3.3 V/5 V isolated or non-isolated POL module powering baseband processing units in 5G radio units.

IC Role / Device Role / Timing Role: Functions as primary control FET (C-FET) switching at 300–600 kHz, handling full input voltage and load current.

Use Value: 30 V V_DSS and 2.65 °C/W R_θJC allow reliable operation under 12 V nominal + 20% surge, with minimal thermal margin required.

Industrial Motor Drive Inverter

Automotive ADAS Power Supply

Use Scenario: Half-bridge stage in compact BLDC motor controller for HVAC blowers or pump modules operating at 24 V DC bus.

IC Role / Device Role / Timing Role: Configured as high-side switch with bootstrap gate drive; body diode conducts freewheeling current during dead time.

Use Value: 14–21 ns t_rr and 1.0 V V_SD minimize freewheeling loss and voltage overshoot during commutation.

Use Scenario: Input-stage synchronous buck supplying 5 V to radar sensor SoCs in automotive ADAS domain controllers.

IC Role / Device Role / Timing Role: Operates as low-side FET in 2-phase interleaved converter, subject to automotive-grade thermal cycling and EMC constraints.

Use Value: −55°C to +175°C T_J rating and AEC-Q101 qualification (per IRF3707ZSPbF family) ensure compliance with automotive power supply requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3713PBF	R_DS(on) = 10.5 mΩ @ 4.5 V; Q_g = 11.5 nC; TO-220AB package	Higher R_DS(on) and gate charge; lacks D2PAK thermal performance	Preferred only where through-hole mounting or legacy footprint compatibility is required.
STL110N3LLH6	R_DS(on) = 5.2 mΩ @ 10 V; Q_g = 24 nC; PowerFLAT 5x6 package	Lower on-resistance but higher gate charge increases driver loss; smaller footprint limits thermal mass	Better for space-constrained designs with strong gate drivers; less suitable for high-temperature ambient environments.

Compared with IRF3707ZSTRLPBF, IRL3713PBF trades thermal performance for mechanical robustness in through-hole systems, while STL110N3LLH6 prioritizes R_DS(on) reduction at the expense of gate drive complexity and thermal derating - making the IRF3707ZSTRLPBF optimal for balanced efficiency, thermal management, and manufacturability in mid-power synchronous buck stages.

Availability

IRF3707ZSTRLPBF is available at Aetrix Electronics and suitable for server CPU voltage regulators, telecom point-of-load converters, and industrial motor drive inverters requiring stable component supply and long-term production continuity.

Supply support for IRF3707ZSTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The IRF3707Z series belongs to Infineon's HEXFET Power MOSFET product line, engineered for high-efficiency, high-reliability switching in DC/DC conversion - particularly targeting synchronous rectification and control FET roles in computing, telecom, and industrial power supplies.

FAQ

Is IRF3707ZSTRLPBF suitable for 5 V gate drive applications?

Yes. Its gate threshold voltage range (1.35–2.25 V) and guaranteed R_DS(on) of 12.5 mΩ at V_GS = 4.5 V make it fully compatible with 5 V logic-level gate drivers. The device remains strongly enhanced at 4.5 V, delivering >90% of its rated current capability without requiring 10 V drive.

What is the maximum continuous drain current at 100°C case temperature?

The datasheet specifies I_D = 30 A at T_C = 100°C with V_GS = 10 V. This reflects thermal derating due to reduced channel mobility and increased R_DS(on); actual usable current depends on PCB copper area, airflow, and heatsink interface - design validation requires thermal simulation or measurement.

Does IRF3707ZSTRLPBF have avalanche capability, and is it tested per JEDEC standards?

Yes. It is fully characterized for unclamped inductive switching with E_AS = 150 mJ (T_J = 25°C) and I_AR = 30 A. Testing follows JEDEC JESD24-11 methodology using standardized clamped inductive test circuits, and results are published in the official datasheet (page 12, "Avalanche Characteristics").

Can IRF3707ZSTRLPBF be used in parallel configurations?

Yes, but with careful attention to gate loop inductance and source inductance matching. Its positive R_DS(on) temperature coefficient (7.5 → 9.5 mΩ from 25°C to 175°C) enables inherent current sharing. Layout must minimize asymmetry - use Kelvin source connections and matched gate resistors to prevent oscillation or current hogging.

IRF3707ZSTRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 59A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.5mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1210 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 57W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF3707ZSTRLPBF FAQ

1.How can I place an order for IRF3707ZSTRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3707ZSTRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3707ZSTRLPBF reliable?

The price and inventory of IRF3707ZSTRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3707ZSTRLPBF is usually 5 days.

3.What payment methods are accepted for IRF3707ZSTRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3707ZSTRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3707ZSTRLPBF?

IRF3707ZSTRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3707ZSTRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3707ZSTRLPBF?

For technical support, including IRF3707ZSTRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3707ZSTRLPBF requirements.

6.How does Aetrix verify that IRF3707ZSTRLPBF is sourced from the original manufacturer or authorized distributors?

All IRF3707ZSTRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3707ZSTRLPBF meets industry standards.

7.What is the process for return or replacement of IRF3707ZSTRLPBF?

All IRF3707ZSTRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3707ZSTRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3707ZSTRLPBF part is unused and in its original packaging.

Return procedure for IRF3707ZSTRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…