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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3707ZSTRR

Name: IRF3707ZSTRR
Brand: Infineon Technologies
SKU: IRF3707ZSTRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3707ZSTRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF3707ZSTRR.pdf

Description:: MOSFET N-CH 30V 59A D2PAK

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Product details

Overview

IRF3707ZSTRR from Infineon Technologies is a 30V N-channel HEXFET Power MOSFET in D2PAK (TO-263) package, optimized for high-frequency synchronous buck converters in CPU power delivery. It delivers 7.5 mΩ R_DS(on) at V_GS = 10 V, 9.7 nC total gate charge, and supports 30 A continuous drain current at T_C = 25°C - enabling efficient low-voltage, high-current DC/DC regulation in server VRMs.

For engineers reviewing the IRF3707ZSTRR datasheet, IRF3707ZSTRR pinout, IRF3707ZSTRR application, or IRF3707ZSTRR equivalent, key selection criteria include its ultra-low gate impedance, fully characterized avalanche capability (E_AS = 150 mJ), body diode reverse recovery performance (Q_rr = 5.2–7.8 nC), and thermal resistance (R_θJC = 2.65 °C/W) for thermally constrained PCB layouts.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-free design to minimize R_DS(on) × Q_g figure-of-merit. Its gate threshold voltage (V_GS(th) = 1.35–2.25 V) enables robust 4.5 V logic-level drive compatibility while maintaining stable turn-on behavior across –55°C to +175°C junction temperature range.

The device integrates a monolithic body diode with fast reverse recovery (t_rr = 14–21 ns) and low forward voltage (V_SD ≤ 1.0 V at I_S = 17 A), critical for minimizing shoot-through losses and cross-conduction risk in synchronous rectification topologies where dV/dt immunity depends on Q_gd/Q_gs1 ratio (measured at 3.4 nC / 2.8 nC).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum blocking voltage compatible with 12 V input rails and transient overshoot margins in point-of-load converters
R_DS(on) max	9.5 mΩ @ V_GS = 10 V - ensures <1.5 W conduction loss at 40 A RMS in VRM phase legs
Q_g	9.7 nC - enables fast switching with moderate gate driver current (e.g., 1 A peak drives 10 ns rise time)
I_D cont @ T_C=25°C	30 A - supports high-current single-phase CPU power stages without parallel devices
E_AS	150 mJ - withstands unclamped inductive energy during fault conditions without failure
t_rr	14–21 ns - reduces diode recovery-induced voltage spikes and EMI in high-dV/dt node switching
R_θJC	2.65 °C/W - allows direct heatsink mounting for thermal management in compact VRM modules

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for low-inductance, high-current PCB routing and thermal transfer to internal copper planes or external heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically and thermally connected to large metal tab - must be soldered to ≥2 oz Cu pour for thermal and current handling
Source	Reference node for gate drive and current sensing	Low-impedance return path; used for Kelvin source connection in precision current monitoring designs
Gate	Control electrode for channel modulation	High-impedance input requiring <100 nA leakage; sensitive to ESD - requires gate resistor (10–47 Ω) and TVS protection

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V V_GS	Enables direct drive from PWM controller outputs without level-shifting, reducing BOM count in compact VRMs
Fully characterized avalanche rating	Guarantees reliable operation under inductive switching faults without derating - eliminates need for external snubbers
Low Q_gd/Q_gs1 ratio (1.2)	Minimizes C_dv/dt-induced false turn-on in high-side synchronous FET applications with fast-switching nodes
Lead-free and RoHS-compliant	Meets IPC-J-STD-020D reflow profile requirements for Pb-free assembly - compatible with standard SMT processes

Applications

Server VRM Phase Legs

Laptop CPU Core Regulators

Use Scenario: High-density, multi-phase buck converters delivering 1–2 V @ >100 A to modern x86 processors in rack-mounted servers.

IC Role / Device Role: Low-side synchronous rectifier FET in interleaved 3–6 phase topology.

Use Value: 7.5 mΩ R_DS(on) and 9.7 nC Q_g reduce both conduction and switching losses, improving full-load efficiency by ~0.8% vs. legacy 12 mΩ alternatives.

Use Scenario: Single-phase or dual-phase core voltage regulators powering mobile CPUs in space-constrained ultrabooks.

IC Role / Device Role: High-current, low-R_DS(on) power switch operating at 300–600 kHz switching frequency.

Use Value: D2PAK thermal performance (R_θJC = 2.65 °C/W) enables >25 A continuous current on 2-layer PCBs without external heatsinks.

GPU Power Delivery Modules

Industrial PLC I/O Power Switches

Use Scenario: Compact, high-efficiency power stages supplying 0.8–1.2 V to discrete GPUs in edge AI inference systems.

IC Role / Device Role: Synchronous FET in adaptive voltage positioning (AVP) controlled buck converter.

Use Value: Fast body diode recovery (t_rr = 14 ns) suppresses voltage ringing during light-load discontinuous conduction mode (DCM), improving stability.

Use Scenario: 24 V DC load switching for programmable logic controller digital outputs driving solenoids or relays.

IC Role / Device Role: Robust, avalanche-rated power switch replacing mechanical relays in industrial control cabinets.

Use Value: 150 mJ single-pulse avalanche energy rating allows safe interruption of inductive loads without external flyback diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3705ZPBF	R_DS(on) = 12 mΩ @ 4.5 V; higher Q_g (18 nC); TO-220AB package	Lower switching speed; better suited for lower-frequency (<100 kHz), higher-voltage (24–48 V) industrial loads	Select when cost sensitivity outweighs efficiency targets and thermal constraints permit through-hole mounting
STL325N3LLH6	R_DS(on) = 1.2 mΩ @ 4.5 V; 30 V rating; PowerFLAT 5x6 package; no integrated body diode	Requires external Schottky diode; optimized for ultra-high-current, ultra-low-voltage (≤0.8 V) AI accelerator supplies	Select only when board layout supports dual-device footprint and system-level diode recovery is managed externally

Compared with IRL3705ZPBF and STL325N3LLH6, IRF3707ZSTRR offers the best balance of low gate charge, proven body diode performance, and D2PAK thermal capability for mainstream high-frequency CPU/GPU VRMs - avoiding both excessive drive loss and external diode complexity.

Availability

IRF3707ZSTRR is available at Aetrix Electronics and suitable for server VRM design, laptop CPU core regulation, and GPU power delivery modules requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF3707ZSTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF3707ZSTRR belongs to the HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing and communications infrastructure where low R_DS(on), fast switching, and avalanche ruggedness are mandatory.

FAQ

What is the maximum recommended gate drive voltage for IRF3707ZSTRR?

The absolute maximum V_GS rating is ±20 V, but the device is characterized and optimized for 10 V drive in power conversion applications. Operating above 12 V provides negligible R_DS(on) improvement while increasing gate oxide stress and risk of overdrive-induced instability in high-dV/dt environments.

Can IRF3707ZSTRR be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (0.023 mV/°C) ensures inherent current sharing between paralleled units. For stable operation, match gate resistors within 5%, use symmetrical PCB layout with Kelvin source connections, and limit mismatched thermal gradients to <10°C across devices.

Does IRF3707ZSTRR require a gate resistor in typical VRM applications?

Yes - a 10–22 Ω non-inductive gate resistor is required to dampen gate ringing, control slew rate, and prevent C_dv/dt turn-on. The resistor value balances switching speed against EMI and shoot-through risk; values below 5 Ω increase risk of oscillation with common gate drivers like IR35201.

How does the body diode performance impact synchronous rectification efficiency?

The body diode's low V_SD (≤1.0 V) and fast t_rr (14–21 ns) reduce conduction loss and reverse recovery energy (Q_rr = 5.2–7.8 nC), directly lowering heat generation in the low-side FET and minimizing voltage spikes that degrade high-side FET reliability during dead-time transitions.

IRF3707ZSTRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 59A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.5mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1210 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 57W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF3707ZSTRR FAQ

1.How can I place an order for IRF3707ZSTRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3707ZSTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3707ZSTRR reliable?

The price and inventory of IRF3707ZSTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3707ZSTRR is usually 5 days.

3.What payment methods are accepted for IRF3707ZSTRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3707ZSTRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3707ZSTRR?

IRF3707ZSTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3707ZSTRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3707ZSTRR?

For technical support, including IRF3707ZSTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3707ZSTRR requirements.

6.How does Aetrix verify that IRF3707ZSTRR is sourced from the original manufacturer or authorized distributors?

All IRF3707ZSTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3707ZSTRR meets industry standards.

7.What is the process for return or replacement of IRF3707ZSTRR?

All IRF3707ZSTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF3707ZSTRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3707ZSTRR part is unused and in its original packaging.

Return procedure for IRF3707ZSTRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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