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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3708

Name: IRF3708
Brand: Infineon Technologies
SKU: IRF3708
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3708

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF3708.pdf

Description:: MOSFET N-CH 30V 62A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF3708 from Infineon Technologies is a 30V, 62A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-frequency synchronous rectification in isolated DC-DC converters and buck regulators. It delivers 12 mΩ R_DS(on) at V_GS = 10 V, ultra-low gate charge (Q_g = 24 nC), and fully characterized avalanche capability (E_AS = 213 mJ), enabling efficient telecom and industrial power supply designs.

For engineers reviewing the IRF3708 datasheet, IRF3708 pinout, IRF3708 application, or IRF3708 equivalent, key selection criteria include its 4.5V logic-level drive compatibility, 62A continuous drain current at T_C = 25°C, low C_iss (2417 pF), fast switching (t_r = 50 ns), and robust body diode with t_rr = 41 ns - all critical for high-efficiency, high-density SMPS layouts.

Technical Context

The IRF3708 employs planar vertical DMOS technology with optimized cell pitch and trench-free gate structure to achieve low R_DS(on) while maintaining high dV/dt immunity and avalanche ruggedness. Its gate threshold voltage (V_GS(th) = 0.6–2.0 V) enables reliable turn-on with 3.3V/4.5V microcontroller outputs.

Dynamic parameters are characterized at T_J = 25°C with V_DD = 15 V and R_G = 0.6 Ω: total gate charge is 24 nC, Miller charge Q_gd is 5.8 nC, and output capacitance C_oss is 707 pF at V_DS = 15 V - supporting MHz-range switching in resonant and synchronous buck topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24V-input telecom and industrial DC-DC stages
R_DS(on) max	12 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 62 A, reducing heatsink requirements
I_D continuous	62 A @ T_C = 25°C - Supports high-current output rails in server VRMs and base station PSUs
Q_g	24 nC - Low gate drive power demand, compatible with standard PWM controllers without gate drivers
E_AS	213 mJ - Confirmed single-pulse avalanche energy rating ensures reliability under inductive switching stress
t_r/t_f	50 ns / 3.7 ns - Fast edge rates minimize switching losses in >500 kHz converter designs
C_iss	2417 pF - Input capacitance value used for gate driver sizing and loop stability analysis

Pinout & Package

IRF3708 is housed in a through-hole TO-220AB package with exposed drain tab for thermal mounting. The case is electrically connected to the drain terminal (Pin 2 and Pin 4), requiring insulating hardware when mounted to grounded heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control electrode; requires ≤±12 V drive; 24 nC total charge dictates gate resistor selection for EMI/loss trade-off
2	Drain	Main high-side switching node; electrically tied to metal tab; must be isolated from heatsink unless system ground referenced
3	Source	Power return path and reference for gate drive; connects to low-side switch source or ground plane in synchronous rectifier configuration
4	Drain (Tab)	Secondary drain connection via thermally conductive but electrically identical path; used for mechanical mounting and heat transfer

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	13.5 mΩ - Enables direct drive from 3.3V/5V logic without level-shifting, simplifying control circuitry
Fully characterized avalanche	213 mJ E_AS, 62 A I_AR - Eliminates need for external snubbers in hard-switched topologies
Low gate-to-drain charge	5.8 nC Q_gd - Reduces Miller-induced shoot-through risk and improves dv/dt immunity
Fast body diode recovery	t_rr = 41 ns, Q_rr = 64 nC - Minimizes reverse recovery loss in synchronous rectifier mode
Thermal resistance R_θJC	1.73 °C/W - Enables 87 W dissipation with modest heatsinking; supports compact board layout

Applications

Telecom DC-DC Converters

Industrial SMPS

Use Scenario: 48V-to-12V isolated forward converter in telecom shelf power supplies.

IC Role / Device Role: Primary-side synchronous rectifier MOSFET replacing Schottky diodes to reduce conduction loss.

Use Value: 12 mΩ R_DS(on) cuts rectifier loss by >60% vs. 40V Schottky, improving full-load efficiency from 92% to 95.2%.

Use Scenario: High-current 24V input buck regulator powering PLC I/O modules.

IC Role / Device Role: Low-side switch in multiphase VRM architecture driving 60+ A load currents.

Use Value: 62A continuous rating and 24 nC Q_g allow parallel operation with minimal gate drive overhead and thermal derating.

Server Processor VRMs

High-Frequency Buck Converters

Use Scenario: 12V-to-1.2V point-of-load converter supplying CPU core voltage.

IC Role / Device Role: High-side switch operating at 300–600 kHz with synchronous rectification.

Use Value: 5.8 nC Q_gd and 50 ns t_r enable clean switching transitions, reducing EMI filtering burden and PCB area.

Use Scenario: Notebook adapter secondary-side synchronous rectifier.

IC Role / Device Role: Logic-level driven MOSFET replacing diode in 5V/3A output stage.

Use Value: 13.5 mΩ R_DS(on) at V_GS = 4.5 V ensures <200 mW conduction loss at full load, meeting CoC Tier 2 efficiency targets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP30NF20	200V V_DS, 30A I_D, 40 mΩ R_DS(on) - higher voltage rating but lower current and higher on-resistance	Suitable for higher bus voltage systems (>48V), not drop-in for 30V designs due to R_DS(on) penalty	Select only if system requires >100V blocking; avoid for 30V telecom converters where IRF3708's 12 mΩ provides 3.3× lower conduction loss
IRL3705N	55V V_DS, 65A I_D, 16 mΩ R_DS(on) @ 4.5V - slightly higher on-resistance, same logic-level drive	Compatible in 48V-input buck converters but exhibits 33% higher conduction loss at 62A	Acceptable for cost-sensitive designs where 3–5% efficiency loss is tolerable; IRF3708 preferred for thermally constrained telecom modules

Compared with STP30NF20 and IRL3705N, IRF3708 offers the lowest R_DS(on) per ampere in the 30V class, delivering superior thermal performance in high-current, high-frequency SMPS where conduction and switching losses dominate system efficiency.

Availability

IRF3708 is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial SMPS, and server VRMs requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for IRF3708 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The HEXFET Power MOSFET product line, including IRF3708, was engineered specifically for high-efficiency, high-reliability switching power supplies in telecom infrastructure, industrial automation, and computing - emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum junction temperature for continuous operation of IRF3708?

The IRF3708 has a specified junction temperature range of –55°C to +175°C. For continuous operation, the device must be thermally designed so that steady-state T_J remains ≤175°C under worst-case ambient and power dissipation conditions. Derating begins at T_C = 70°C, with linear reduction of P_D at 0.58 W/°C.

Can IRF3708 be driven directly from a 3.3V microcontroller GPIO?

Yes - IRF3708 is a logic-level MOSFET with V_GS(th) as low as 0.6 V and guaranteed R_DS(on) ≤13.5 mΩ at V_GS = 4.5 V. At 3.3 V, typical R_DS(on) is ~14.5 mΩ, sufficient for moderate-current applications (<30 A). For full 62 A capability, 4.5–10 V drive is recommended.

Does IRF3708 have an integrated body diode, and what are its recovery characteristics?

Yes - IRF3708 includes a monolithic parasitic body diode between source and drain. Its reverse recovery time is 41 ns (typical) at T_J = 25°C, I_F = 31 A, and dI/dt = 100 A/µs, with Q_rr = 64 nC. These values are fully characterized and support synchronous rectifier operation without external diode replacement.

Is IRF3708 RoHS-compliant and lead-free?

Yes - the part number suffix "PbF" (e.g., IRF3708PbF) explicitly denotes lead-free, RoHS-compliant construction. All variants listed (IRF3708, IRF3708S, IRF3708L, IRF3708LPbF) meet JEDEC J-STD-609A Class 3 moisture sensitivity and IPC/JEDEC J-STD-020D reflow profile requirements.

IRF3708 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 62A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.8V, 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2417 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 87W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF3708 FAQ

1.How can I place an order for IRF3708 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3708 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3708 reliable?

The price and inventory of IRF3708 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3708 is usually 5 days.

3.What payment methods are accepted for IRF3708?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3708 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3708?

IRF3708 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3708 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3708?

For technical support, including IRF3708 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3708 requirements.

6.How does Aetrix verify that IRF3708 is sourced from the original manufacturer or authorized distributors?

All IRF3708 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3708 meets industry standards.

7.What is the process for return or replacement of IRF3708?

All IRF3708 units undergo pre-shipment inspection (PSI). If there is an issue with IRF3708, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3708 part is unused and in its original packaging.

Return procedure for IRF3708:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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