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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3708L

Name: IRF3708L
Brand: Infineon Technologies
SKU: IRF3708L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3708L

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF3708L.pdf

Description:: MOSFET N-CH 30V 62A TO262

Quantity:: RFQ Add To RFQ list

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Inventory:6,811

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Product details

Overview

IRF3708L from Infineon Technologies is a 30V, 62A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-frequency synchronous rectification in isolated DC-DC converters and buck regulators for telecom and CPU power delivery. It delivers 12 mΩ R_DS(on) at V_GS = 4.5 V, ultra-low gate charge (Q_g = 24 nC), and fully characterized avalanche capability (E_AS = 213 mJ).

For engineers reviewing the IRF3708L datasheet, IRF3708L pinout, IRF3708L application, or IRF3708L equivalent, key selection criteria include its low-voltage gate drive compatibility (4.5 V logic-level operation), robust unclamped inductive switching performance, thermal resistance (R_θJC = 1.73 °C/W), and lead-free TO-220AB mechanical footprint.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-assisted channel design to achieve low R_DS(on) while maintaining fast switching transitions. Its gate threshold voltage (V_GS(th) = 0.6–2.0 V) enables reliable turn-on with 3.3 V and 5 V controllers, and its low C_iss (2417 pF) and C_rss (52 pF) reduce Miller-induced shoot-through risk in half-bridge topologies.

The device integrates a co-packaged body diode with low reverse recovery charge (Q_rr = 64–96 nC) and fast trr (41–65 ns), supporting high-efficiency synchronous rectification without external Schottky replacement. Thermal design is enabled by direct case-to-heatsink mounting via Pin 4 (Drain), with validated junction-to-case thermal resistance of 1.73 °C/W.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V input bus and transient margin in telecom/industrial SMPS
R_DS(on) @ 4.5 V	12 mΩ - Enables <1 W conduction loss at 30 A in 48 V→12 V isolated converters
I_D @ T_C = 25°C	62 A - Sustains full-load current in high-density server VRMs with forced-air cooling
Q_g	24 nC - Reduces gate driver power demand and enables >500 kHz switching in synchronous buck stages
E_AS	213 mJ - Supports unclamped inductive switching during fault conditions without failure
R_θJC	1.73 °C/W - Allows direct heatsink mounting for thermal management in space-constrained PCB layouts
trr / Q_rr	41–65 ns / 64–96 nC - Minimizes body-diode switching loss and EMI in hard-switched synchronous rectifiers

Pinout & Package

IRF3708L uses the standard TO-220AB package with 4 leads: Gate (Pin 1), Drain (Pin 2), Source (Pin 3), and secondary Drain connection (Pin 4) for enhanced thermal and current-carrying capability. The metal tab is electrically connected to Drain (Pins 2 and 4), enabling low-inductance heatsink attachment.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Accepts 3.3–12 V logic-level drive; low input capacitance (C_iss = 2417 pF) eases driver selection
2 (Drain)	Main high-side current path	Primary drain terminal; electrically tied to metal tab and Pin 4 for parallel current sharing
3 (Source)	Reference node for gate drive	Common return for load current and gate loop; critical for minimizing switching noise coupling
4 (Drain)	Secondary drain connection	Redundant drain terminal improving thermal conduction and reducing package inductance in high-dI/dt applications

Key Features

Feature	Design Value
Logic-level gate drive	Guaranteed turn-on at V_GS = 4.5 V supports direct interface with microcontroller GPIO or PWM IC outputs
Ultra-low R_DS(on)	12 mΩ @ 4.5 V reduces conduction loss by >35% vs. legacy 30 V MOSFETs in 48 V intermediate bus converters
Low gate charge	Q_g = 24 nC lowers required gate driver peak current and improves efficiency above 300 kHz
Robust avalanche rating	213 mJ single-pulse E_AS eliminates need for external snubbers in flyback and forward converter primary switches
Lead-free TO-220AB	RoHS-compliant packaging with industry-standard footprint and thermal pad geometry for drop-in replacement

Applications

Telecom DC-DC Converters

Server CPU Voltage Regulators

Use Scenario: 48 V to 12 V isolated half-bridge DC-DC converter in 1RU telecom shelf with 92% target efficiency.

IC Role / Device Role: Primary-side synchronous rectifier MOSFET in active-clamp forward topology.

Use Value: Low R_DS(on) and fast trr minimize conduction and reverse recovery losses, enabling >500 kHz operation without thermal derating.

Use Scenario: Multiphase buck converter delivering up to 200 A at 1.0–1.8 V to modern Xeon/EPYC processors.

IC Role / Device Role: High-side switch in each phase leg, driven by dedicated gate controller (e.g., IR35201).

Use Value: 4.5 V gate compatibility allows use with integrated driver ICs; low Q_g reduces gate drive power and improves transient response.

Industrial Motor Drives

LED Driver Power Stages

Use Scenario: 24 V input H-bridge in compact servo amplifier for brushless DC motor control.

IC Role / Device Role: Low-side switching element handling continuous 40 A load current with PWM frequencies up to 20 kHz.

Use Value: Avalanche ruggedness ensures reliability during inductive kickback from motor windings without external clamping diodes.

Use Scenario: Constant-current buck LED driver for high-bay lighting (100–200 W output).

IC Role / Device Role: Main switching transistor operating at 200–500 kHz with 100% duty-cycle capability during dimming.

Use Value: Low V_GS(th) and stable R_DS(on) over temperature enable precise current regulation across ambient range (-40°C to +85°C).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP30NF20	200 V V_DS, 30 A I_D, 35 mΩ R_DS(on) @ 10 V - higher voltage rating but lower current and higher on-resistance	Suitable for higher-input industrial supplies (>100 V), not optimal for 24–48 V telecom rails due to excessive conduction loss	Select only when system requires >100 V blocking; avoid for 30 V-class synchronous rectification
IXTP30N10P	100 V V_DS, 30 A I_D, 32 mΩ R_DS(on) @ 10 V - higher R_DS(on), no 4.5 V drive spec, TO-220 package without dual-drain pin	Designed for general-purpose switching where logic-level drive and low Q_g are not critical	Use only in non-high-frequency, non-synchronous applications; lacks IRF3708L's optimized body diode and thermal path

Compared with STP30NF20 and IXTP30N10P, IRF3708L offers superior performance in 30 V synchronous rectification due to its 4.5 V logic-level gate, 12 mΩ on-resistance, dual-drain thermal path, and tightly specified Q_rr/trr - making it uniquely suited for high-efficiency, high-density DC-DC conversion.

Availability

IRF3708L is available at Aetrix Electronics and suitable for telecom power systems, server VRMs, industrial motor drives, and LED driver power stages requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF3708L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRF3708L belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-frequency, high-efficiency power conversion in telecom infrastructure, computing, and industrial automation where low gate charge and robust avalanche performance are essential.

FAQ

Is IRF3708L compatible with 3.3 V microcontroller GPIO for direct gate driving?

Yes - IRF3708L has a guaranteed gate threshold voltage (V_GS(th)) of 0.6–2.0 V and is fully characterized down to V_GS = 4.5 V, enabling reliable turn-on with 3.3 V logic when used with appropriate gate resistor and layout. However, full R_DS(on) specification applies at ≥4.5 V, so 3.3 V operation yields higher on-resistance and must be verified under worst-case load/temperature.

What is the maximum recommended continuous drain current at 70°C case temperature?

The datasheet specifies I_D = 52 A at T_C = 70°C with V_GS = 10 V. This value assumes proper heatsinking and PCB copper area per AN-994 guidelines. At 4.5 V gate drive, derating is required due to higher R_DS(on); typical usable current drops to ~40 A under same thermal conditions.

Does IRF3708L require an external freewheeling diode in synchronous rectifier applications?

No - IRF3708L integrates a low-Q_rr body diode (64–96 nC) with fast trr (41–65 ns), enabling direct use as a synchronous rectifier without external diode. Its diode characteristics are fully characterized and qualified for repetitive hard commutation in buck and forward converters.

How does the dual-drain pin configuration (Pins 2 and 4) affect PCB layout and thermal design?

Pins 2 and 4 are internally connected to the same drain node and metal tab. Using both pins reduces current density in the leadframe, lowers package inductance, and improves thermal conduction to the heatsink. PCB layout should connect both pins to the same large copper pour or heatsink pad, avoiding narrow traces between them to preserve low-inductance and low-thermal-resistance paths.

IRF3708L Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 62A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.8V, 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2417 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 87W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRF3708L FAQ

1.How can I place an order for IRF3708L through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3708L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3708L reliable?

The price and inventory of IRF3708L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3708L is usually 5 days.

3.What payment methods are accepted for IRF3708L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3708L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3708L?

IRF3708L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3708L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3708L?

For technical support, including IRF3708L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3708L requirements.

6.How does Aetrix verify that IRF3708L is sourced from the original manufacturer or authorized distributors?

All IRF3708L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3708L meets industry standards.

7.What is the process for return or replacement of IRF3708L?

All IRF3708L units undergo pre-shipment inspection (PSI). If there is an issue with IRF3708L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3708L part is unused and in its original packaging.

Return procedure for IRF3708L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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