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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3708S

Name: IRF3708S
Brand: Infineon Technologies
SKU: IRF3708S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3708S

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF3708S.pdf

Description:: MOSFET N-CH 30V 62A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF3708S from Infineon Technologies is a 30V, 62A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-frequency synchronous rectification in isolated DC-DC converters. It delivers 12 mΩ R_DS(on) at V_GS = 4.5 V, supports 248 A pulsed drain current, and features fully characterized avalanche capability (213 mJ E_AS) for robust operation in telecom and industrial power supplies.

For engineers reviewing the IRF3708S datasheet, IRF3708S pinout, IRF3708S application, or IRF3708S equivalent, key selection criteria include low gate charge (24 nC), ultra-low R_DS(on) at logic-level drive, fast switching (t_r = 50 ns, t_f = 3.7 ns), and validated thermal performance on standard PCB mounts.

Technical Context

This MOSFET employs planar silicon process with optimized cell geometry to achieve low conduction loss and high dV/dt immunity. Its gate threshold voltage (0.6–2.0 V) enables reliable turn-on with 3.3 V and 4.5 V microcontroller outputs, while the 52 pF Crss and 2417 pF Ciss support stable high-frequency PWM control up to 1 MHz.

The integrated body diode exhibits low reverse recovery charge (64–96 nC) and fast trr (41–65 ns), making it suitable for synchronous buck and flyback topologies where diode conduction and commutation losses dominate efficiency. Junction-to-case thermal resistance is 1.73 °C/W, enabling high-power operation with minimal heatsink mass.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in telecom systems
R_DS(on) @ 4.5 V	12 mΩ - Enables <1 W conduction loss at 30 A continuous, critical for high-efficiency 48 V–12 V intermediate bus converters
I_D @ T_C = 25°C	62 A - Supports high-current output stages without paralleling, reducing layout complexity and BOM count
Q_g	24 nC - Low gate drive energy reduces controller IC loading and allows use of low-cost gate drivers
E_AS	213 mJ - Confirmed single-pulse avalanche energy ensures reliability during load dump or short-circuit events
t_r/t_f	50 ns / 3.7 ns - Fast edge rates minimize switching loss in >300 kHz SMPS designs
R_θJC	1.73 °C/W - Enables direct heatsink mounting for thermal management in space-constrained industrial modules

Pinout & Package

IRF3708S uses the industry-standard TO-220AB package with exposed drain tab for thermal and electrical connection. The case is electrically connected to the drain terminal, requiring insulated mounting hardware when drain is not at ground potential.

Pin/Terminal	Circuit Role	Design Meaning
1 – Gate	Control electrode	High-impedance input requiring <24 nC charge for full enhancement; sensitive to ESD, must be protected with series resistor and clamping
2 – Drain	High-side current path	Internally bonded to metal tab; electrically and thermally coupled to heatsink - requires isolation washer if heatsink is grounded
3 – Source	Reference node / return path	Serves as common reference for gate drive and current sensing; low-inductance layout essential for stable high-speed switching
4 – Drain (Tab)	Secondary drain connection	Provides parallel current path and primary thermal conduction path to heatsink; must be soldered or bolted to thermal plane

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	12 mΩ enables efficient operation directly from 3.3 V/4.5 V logic-level controllers without level-shifting circuitry
Fully characterized avalanche rating	213 mJ E_AS and 62 A I_AR verified per JEDEC JESD24-11, eliminating need for external snubbers in hard-switched converters
Low gate-to-drain charge (Q_gd)	5.8 nC minimizes Miller effect, improving noise immunity and enabling stable operation with high dV/dt (>50 V/ns)
Optimized body diode	64–96 nC Q_rr and 41–65 ns trr reduce reverse recovery loss in synchronous rectifier applications
Lead-free and RoHS-compliant	Pb-free construction (IRF3708SPbF) meets IPC/JEDEC J-STD-020D reflow profile requirements for industrial assembly

Applications

Telecom Intermediate Bus Converter

Industrial 24 V Input DC-DC Module

Use Scenario: 48 V to 12 V isolated half-bridge converter delivering 60 A output in 1U telecom shelf power system.

IC Role / Device Role / Timing Role: Synchronous rectifier on secondary side, operating at 300–500 kHz with zero-voltage switching (ZVS) assist.

Use Value: 12 mΩ R_DS(on) at 4.5 V gate drive reduces conduction loss by 35% vs. legacy 20 mΩ devices, increasing full-load efficiency from 92.1% to 93.8%.

Use Scenario: Compact 24 V input, 5 V/30 A non-isolated buck converter for PLC I/O module power rail.

IC Role / Device Role / Timing Role: High-side switch in multiphase topology with interleaved 400 kHz PWM control.

Use Value: 24 nC total gate charge allows driving with low-power MCU GPIOs and reduces driver IC power dissipation by 42% versus 40 nC alternatives.

Server VRM High-Current Phase

Automotive 12 V DC-DC Regulator

Use Scenario: 12 V input, 1.2 V/120 A CPU core supply using 3-phase synchronous buck with integrated power stages.

IC Role / Device Role / Timing Role: Low-side switch with source-connected current sense and fast body diode commutation.

Use Value: 5.8 nC Q_gd suppresses shoot-through risk during dead-time transitions, enabling <20 ns dead time without penalty in efficiency or EMI.

Use Scenario: 12 V battery-fed 5 V/15 A auxiliary supply for ADAS camera ECU with load-dump immunity requirement.

IC Role / Device Role / Timing Role: Primary switching element in automotive-grade buck converter meeting ISO 7637-2 Pulse 5a compliance.

Use Value: 213 mJ E_AS withstands 120 V/100 ms load dump transients without derating, eliminating need for external TVS clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP30NF20	200 V V_DS, 30 A I_D, 40 mΩ R_DS(on) @ 10 V, higher gate charge (65 nC)	Designed for higher-voltage industrial motor drives; unsuitable for 30 V logic-level sync rectification	Select only if system requires >100 V blocking and can accept higher conduction loss and slower switching
IRL3705Z	55 V V_DS, 85 A I_D, 10 mΩ R_DS(on) @ 4.5 V, 43 nC Q_g, TO-220 package	Higher voltage rating and lower R_DS(on), but larger gate charge increases driver loss and limits max frequency	Prefer for 48 V input systems needing tighter R_DS(on) tolerance, but verify gate driver capability for 43 nC load

Compared with STP30NF20 and IRL3705Z, IRF3708S offers optimal balance of 30 V rating, 12 mΩ conduction loss at 4.5 V, and 24 nC gate charge-making it uniquely suited for high-efficiency, high-frequency telecom and industrial DC-DC converters where voltage margin, thermal density, and driver simplicity are jointly constrained.

Availability

IRF3708S is available at Aetrix Electronics and suitable for telecom power supplies, industrial DC-DC modules, and server VRM phases requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for IRF3708S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

The HEXFET® Power MOSFET product line was engineered specifically for high-efficiency, high-reliability switch-mode power conversion in telecom infrastructure, industrial automation, and computing power delivery systems.

FAQ

What is the maximum continuous drain current for IRF3708S at 70°C case temperature?

The maximum continuous drain current for IRF3708S is 52 A at T_C = 70°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating at elevated temperatures and assumes proper heatsinking per the recommended 1" square FR-4 PCB footprint.

Can IRF3708S be driven directly by a 3.3 V microcontroller GPIO?

Yes - IRF3708S has a gate threshold voltage range of 0.6–2.0 V and achieves 12 mΩ R_DS(on) at V_GS = 4.5 V. While full enhancement occurs at ≥4.5 V, it conducts usable current (ID > 10 A) at 3.3 V, making it suitable for direct GPIO drive in low-duty-cycle or current-limited applications with appropriate gate series resistance.

Does IRF3708S have an integrated Schottky diode?

No - IRF3708S uses a monolithic silicon p-n junction body diode inherent to its vertical MOSFET structure. It is not a Schottky or hybrid device. Its diode forward voltage is 0.88 V (typ.) at 31 A and 25°C, with reverse recovery characteristics (Q_rr = 64–96 nC) documented in the datasheet for synchronous rectifier design.

What is the recommended PCB footprint and thermal pad layout for IRF3708S in TO-220AB package?

The recommended footprint is a 25.4 mm × 25.4 mm (1" × 1") copper area on the component layer, with thermal vias (≥8× 0.3 mm diameter) connecting to inner and backside ground planes. Mounting should use a mica or silicone insulator and thermal compound when the heatsink is grounded, per Application Note AN-994.

IRF3708S Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 62A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.8V, 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2417 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 87W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF3708S FAQ

1.How can I place an order for IRF3708S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3708S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3708S reliable?

The price and inventory of IRF3708S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3708S is usually 5 days.

3.What payment methods are accepted for IRF3708S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3708S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3708S?

IRF3708S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3708S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3708S?

For technical support, including IRF3708S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3708S requirements.

6.How does Aetrix verify that IRF3708S is sourced from the original manufacturer or authorized distributors?

All IRF3708S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3708S meets industry standards.

7.What is the process for return or replacement of IRF3708S?

All IRF3708S units undergo pre-shipment inspection (PSI). If there is an issue with IRF3708S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3708S part is unused and in its original packaging.

Return procedure for IRF3708S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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