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Infineon Technologies IRF3708STRL

Part No.:
IRF3708STRL
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRF3708STRL.pdf
Description:
MOSFET N-CH 30V 62A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,290

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Product details

Overview

IRF3708STRL from Infineon Technologies is a 30V, 62A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-frequency synchronous rectification in isolated DC-DC converters. It delivers 12 mΩ RDS(on) at VGS = 10 V and 13.5 mΩ at 4.5 V, with ultra-low gate charge (Qg = 24 nC) and fast switching (tf = 3.7 ns), enabling high-efficiency telecom and industrial power supplies.

For engineers reviewing the IRF3708STRL datasheet, IRF3708STRL pinout, IRF3708STRL application, or IRF3708STRL equivalent, key selection criteria include its low RDS(on) at 4.5 V for 5 V gate drive compatibility, fully characterized avalanche capability (EAS = 213 mJ), and thermal performance on standard PCB mount (RθJA = 40 °C/W).

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-free design to minimize conduction and switching losses simultaneously. Its gate threshold voltage (VGS(th) = 0.6–2.0 V) enables reliable turn-on with logic-level drivers, while the body diode exhibits low reverse recovery charge (Qrr = 64–96 nC) and fast trr (41–65 ns) for reduced shoot-through risk in synchronous buck topologies.

The device is rated for continuous operation up to TJ = 175 °C, with linear derating (0.58 W/°C) above 70 °C case temperature. Its SOA curve supports single-pulse avalanche energy up to 213 mJ at ID = 24.8 A, making it suitable for unclamped inductive switching in hard-switched converters.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - Supports input rails up to 24 V nominal with 25% margin for transient spikes in telecom systems.
RDS(on) @ 10 V12 mΩ max - Enables <1.5 W conduction loss at 62 A, critical for high-current output stages.
RDS(on) @ 4.5 V13.5 mΩ max - Ensures robust turn-on with 5 V microcontroller GPIO or PWM controller outputs.
Qg24 nC typ - Reduces gate driver power demand and switching transition time in >500 kHz designs.
EAS213 mJ - Withstands single-pulse inductive energy without failure in flyback or forward converters.
tf3.7 ns typ - Minimizes overlap loss during high-side/low-side transitions in synchronous rectifiers.
Qrr64–96 nC - Low reverse recovery charge reduces diode conduction loss and EMI in discontinuous conduction mode.

Pinout & Package

IRF3708STRL uses the industry-standard TO-220AB package with 4 leads (lead 4 is drain-connected tab). The package features a metal tab for direct heatsink mounting and meets JEDEC outline standards.

Pin/TerminalCircuit RoleDesign Meaning
1 (Gate)Control terminalReceives gate drive signal; requires ≤12 V absolute max rating and low-impedance driver due to 24 nC Qg.
2 (Drain)High-side current pathConnected to primary-side rail or transformer secondary; electrically tied to metal tab for thermal conduction.
3 (Source)Reference nodeServes as return path for load current and gate drive reference; must be low-inductance layout for stable switching.
4 (Drain / Tab)Thermal & electrical connectionExposed metal tab provides primary heat dissipation path (RθJC = 1.73 °C/W) and connects internally to drain.

Key Features

FeatureDesign Value
Ultra-low gate impedanceEnables clean, fast edge rates with minimal external gate resistor, reducing switching loss in high-frequency SMPS.
Fully characterized avalancheGuaranteed 213 mJ single-pulse energy withstand allows safe operation in unclamped inductive circuits without snubbers.
Low RDS(on) at 4.5 VSupports direct drive from 5 V logic controllers, eliminating level-shifting circuitry in cost-sensitive industrial power modules.
Optimized body diodeQrr = 64–96 nC and trr = 41–65 ns reduce reverse recovery loss and associated EMI in synchronous rectifier applications.

Applications

Telecom DC-DC ConvertersIndustrial SMPS

Use Scenario: 48 V input to 12 V/60 A isolated forward converter in base station power shelf.

IC Role / Device Role / Timing Role: Synchronous rectifier on secondary side, replacing Schottky diodes to improve efficiency by 2–3%.

Use Value: 12 mΩ RDS(on) cuts conduction loss by >50% vs. 40 V Schottky, directly increasing full-load efficiency to >94%.

Use Scenario: 24 V input to 5 V/30 A non-isolated buck converter for PLC I/O module power.

IC Role / Device Role / Timing Role: High-side switch in high-current buck stage operating at 300–500 kHz.

Use Value: 24 nC Qg and 3.7 ns tf enable low gate drive loss and minimal dead-time penalty, sustaining >92% efficiency.

Server VRMsMotor Drive Half-Bridge

Use Scenario: 12 V input to 1.2 V/120 A multiphase buck converter for CPU core power delivery.

IC Role / Device Role / Timing Role: Low-side switch in paralleled phase leg, leveraging low RDS(on) and thermal robustness.

Use Value: RθJA = 40 °C/W on PCB mount allows 62 A continuous current without forced air, simplifying thermal design.

Use Scenario: 24 V H-bridge driver for 100 W BLDC fan in HVAC control unit.

IC Role / Device Role / Timing Role: High-side and low-side switch in half-bridge configuration with bootstrap gate drive.

Use Value: VGS(th) = 0.6–2.0 V ensures consistent turn-on across temperature, preventing shoot-through during PWM transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRL3705ZPBFRDS(on) = 16 mΩ @ 4.5 V; Qg = 44 nC; lower VDS (30 V same), higher gate charge.Better suited for lower-frequency (<200 kHz), higher-current applications where gate drive strength is abundant.Choose when prioritizing lowest possible RDS(on) over switching speed; avoid in >300 kHz sync rectifier designs.
STP30NF20RDS(on) = 36 mΩ @ 10 V; VDS = 200 V; higher voltage rating but significantly higher on-resistance and Qg.Targeted at 100–200 V industrial motor drives, not telecom/SMPS where low RDS(on) and fast switching dominate.Select only if system requires >100 V blocking voltage; unsuitable for 24–48 V high-efficiency DC-DC.

Compared with IRL3705ZPBF and STP30NF20, IRF3708STRL uniquely balances low 4.5 V RDS(on), minimal Qg, and guaranteed avalanche ruggedness-making it optimal for high-frequency, high-current synchronous rectification where thermal and switching losses are co-constrained.

Availability

IRF3708STRL is available at Aetrix Electronics and suitable for telecom power supplies, industrial SMPS, server VRMs, and motor drive half-bridges requiring stable component supply and long-term production continuity.

Supply support for IRF3708STRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRF3708STRL belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in telecom infrastructure, industrial automation, and computing power delivery systems.

FAQ

What is the maximum continuous drain current for IRF3708STRL at 70°C case temperature?

The maximum continuous drain current is 52 A at TC = 70°C with VGS = 10 V, per the Absolute Maximum Ratings table. This reflects thermal derating from the 62 A rating at 25°C, based on a linear derating factor of 0.58 W/°C and RθJC = 1.73 °C/W.

Does IRF3708STRL have a lead-free RoHS-compliant variant?

Yes, IRF3708STRL is a lead-free, RoHS-compliant part indicated by the "PbF" suffix in its full ordering code (e.g., IRF3708SPbF). The "P" in the assembly line position on the package marking confirms lead-free construction per JEDEC J-STD-609.

Can IRF3708STRL be used in avalanche mode for clamping applications?

Yes-it is fully characterized for single-pulse avalanche operation with EAS = 213 mJ at ID = 24.8 A. However, repetitive avalanche is not rated; use only for infrequent, controlled energy events such as transformer leakage spike suppression in flyback converters.

What is the recommended gate resistor value for switching at 500 kHz?

A gate resistor of 1–3 Ω is recommended to balance switching speed and ringing suppression. With Qg = 24 nC and typical driver rise/fall times <10 ns, this range limits dV/dt to ~5–10 V/ns, minimizing EMI while maintaining tf < 5 ns for efficient high-frequency operation.

IRF3708STRL Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
62A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
2.8V, 10V
Rds On (Max) @ Id, Vgs:
12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
24 nC @ 4.5 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
2417 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
87W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

IRF3708STRL FAQ

1.How can I place an order for IRF3708STRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3708STRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3708STRL reliable?

The price and inventory of IRF3708STRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3708STRL is usually 5 days.

3.What payment methods are accepted for IRF3708STRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3708STRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3708STRL?

IRF3708STRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3708STRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3708STRL?

For technical support, including IRF3708STRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3708STRL requirements.

6.How does Aetrix verify that IRF3708STRL is sourced from the original manufacturer or authorized distributors?

All IRF3708STRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3708STRL meets industry standards.

7.What is the process for return or replacement of IRF3708STRL?

All IRF3708STRL units undergo pre-shipment inspection (PSI). If there is an issue with IRF3708STRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3708STRL part is unused and in its original packaging.

Return procedure for IRF3708STRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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