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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3709ZL

Name: IRF3709ZL
Brand: Infineon Technologies
SKU: IRF3709ZL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3709ZL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF3709ZL.pdf

Description:: MOSFET N-CH 30V 87A TO262

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF3709ZL from Infineon Technologies is a 30V, 87A N-channel HEXFET Power MOSFET in TO-262 (I²PAK) package, optimized for high-frequency synchronous buck converters in CPU power delivery. It features 5.0 mΩ R_DS(on) at V_GS = 10 V, 17 nC total gate charge, fully characterized avalanche capability (250 mJ E_AS), and 1.0 V body diode forward voltage - enabling efficient low-voltage, high-current switching in server VRMs and notebook DC/DC stages.

For engineers reviewing the IRF3709ZL datasheet, IRF3709ZL pinout, IRF3709ZL application, or IRF3709ZL equivalent, key selection criteria include its 4.5V gate drive compatibility, low Q_gd/Q_gs1 ratio for C_dv/dt immunity, 1.89°C/W junction-to-case thermal resistance, and validated performance in clamped inductive load and unclamped avalanche conditions per JEDEC JESD24-11.

Technical Context

This MOSFET employs planar stripe cell structure with optimized gate oxide thickness and trench-assisted source metallization to achieve low R_DS(on) while maintaining robust short-circuit withstand time (>10 µs at V_DD = 24 V). Its gate threshold voltage (1.35–2.25 V) and negative temperature coefficient (−5.5 mV/°C) support stable parallel operation under thermal stress.

The device integrates a co-packaged, low-Q_rr (6.2–9.3 nC) body diode with 16–24 ns reverse recovery time, enabling zero-voltage switching (ZVS) assist in synchronous rectification. Its C_iss/C_oss/C_rss values (2130 pF / 450 pF / 220 pF at V_DS = 15 V) are tuned for minimal switching loss in 300–1000 kHz converter topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports input rails up to 24 V with 25% safety margin for transient overvoltage in point-of-load converters.
R_DS(on) max @ V_GS = 10 V	6.3 mΩ - Enables ≤1.5 W conduction loss at 87 A DC, critical for <1% efficiency penalty in 12 V → 1.2 V VRMs.
Q_g typ	17 nC - Allows fast turn-on with ≤20 ns delay using 2 A gate driver, minimizing overlap loss in synchronous FET position.
E_AS single-pulse	250 mJ - Withstands energy from 17 A inductive current interruption without failure, verified per MIL-STD-750 Method 3401.
R_θJC	1.89 °C/W - Enables 79 W continuous dissipation at T_C = 100°C, supporting compact heatsink designs in space-constrained modules.
Q_rr max	9.3 nC - Limits reverse recovery loss in high-dV/dt nodes, reducing shoot-through risk when paired with control FET in dual-MOSFET phase legs.

Pinout & Package

IRF3709ZL uses the TO-262 (I²PAK) package: 3-pin, isolated tab, surface-mount compatible with through-hole footprint. Tab is electrically connected to drain (D).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-impedance return path for load current; connects directly to PCB ground plane for minimal loop inductance in high-di/dt applications.
Pin 2 (Gate)	Control input (G)	High-impedance MOS gate requiring <100 nA leakage; sensitive to ESD - must be protected with 10 kΩ series resistor and TVS clamp.
Pin 3 (Drain)	Power output (D)	Internally bonded to metal tab; serves as primary heat sink interface and high-current output node - requires thermal pad soldering per IPC-7095B.

Key Features

Feature	Design Value
Lead-free (RoHS-compliant) construction	Meets IPC/JEDEC J-STD-020D reflow profile with peak temperature ≤260°C - supports automated SMT assembly without voiding warranty.
100% UIS (Unclamped Inductive Switching) tested	Each unit validated at I_AS = 17 A, V_DD = 15 V - guarantees avalanche ruggedness for field reliability in hard-switched DC/DC converters.
Low Q_gd/Q_gs1 ratio (6.0/4.4 ≈ 1.36)	Reduces susceptibility to C_dv/dt turn-on during high-slew-rate node transitions - critical for stable operation in 4-phase VRMs with >50 V/ns dV/dt.
Body diode with soft recovery	trr = 16–24 ns and Q_rr = 6.2–9.3 nC - minimizes voltage overshoot and ringing during freewheeling, easing EMI filter design.

Applications

Server Voltage Regulator Modules (VRMs)

Laptop CPU Core Power Stages

Use Scenario: 4-phase, 300 kHz synchronous buck converter delivering 1.2 V @ 120 A to Intel Xeon processors.

IC Role / Device Role: Low-side synchronous rectifier FET handling continuous 87 A RMS current with <1.2 mΩ effective on-resistance at 100°C junction.

Use Value: Achieves ≥94% efficiency at full load by minimizing conduction loss and Q_oss-related switching loss (Q_oss = 11 nC at V_DS = 15 V).

Use Scenario: Dual-phase 500 kHz buck converter powering AMD Ryzen mobile CPUs in thin-and-light notebooks.

IC Role / Device Role: High-current, low-R_DS(on) power switch operating with 4.5 V gate drive from integrated PWM controller.

Use Value: Enables compact 12 mm × 12 mm power stage with 1.89°C/W R_θJC, allowing passive cooling via copper-filled thermal vias to internal ground plane.

Industrial PLC I/O Power Supplies

Telecom Base Station POL Converters

Use Scenario: 24 V input → 3.3 V/15 A isolated DC/DC module for programmable logic controller digital outputs.

IC Role / Device Role: Primary-side synchronous rectifier in active-clamp forward topology, rated for 100% duty cycle operation.

Use Value: Survives 1000+ thermal cycles (−40°C to +125°C) due to TO-262's mechanical robustness and qualified 175°C TJ rating.

Use Scenario: 48 V → 12 V intermediate bus converter in macrocell base station RF power amplifiers.

IC Role / Device Role: High-efficiency, high-reliability power switch in 600 kHz interleaved buck stage with forced-air cooling.

Use Value: Delivers 96.2% peak efficiency with 250 mJ E_AS margin against lightning-induced transients on 48 V input bus.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6 (STMicroelectronics)	30 V, 220 A, R_DS(on) = 1.8 mΩ @ 10 V, Q_g = 42 nC, DFN5x6 package	Higher current rating but larger gate charge increases driver loss; requires 5×6 mm footprint vs. TO-262's 10.16×15.24 mm	Select when board space allows larger package and higher peak current (>150 A) is needed with lower R_DS(on).
ON Semiconductor NTMFS4C09NT1G	30 V, 90 A, R_DS(on) = 5.2 mΩ @ 10 V, Q_g = 15.5 nC, SO-8FL package	Lower Q_g improves light-load efficiency but SO-8FL limits power dissipation to 42 W (R_θJA = 30°C/W)	Select for cost-sensitive, space-constrained consumer applications where thermal budget permits ≤42 W dissipation.

Compared with STL220N3LLH6 and NTMFS4C09NT1G, IRF3709ZL offers balanced trade-offs: TO-262's 79 W power handling exceeds SO-8FL, while its 17 nC Q_g enables faster switching than the 42 nC ST part - making it optimal for mid-power VRMs requiring both thermal headroom and dynamic response.

Availability

IRF3709ZL is available at Aetrix Electronics and suitable for server VRMs, laptop CPU power stages, industrial PLC I/O supplies, and telecom base station POL converters requiring stable component supply across multi-year production cycles.

Supply support for IRF3709ZL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification to AEC-Q101 and IEC 60747 standards.

IRF3709ZL belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability DC/DC conversion in computing and communications infrastructure where low R_DS(on), controlled Q_g, and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current for IRF3709ZL at 100°C case temperature?

The maximum continuous drain current (I_D) for IRF3709ZL at T_C = 100°C is 62 A, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating from the 87 A rating at 25°C, using the linear derating factor of 0.53 W/°C and R_θJC = 1.89°C/W.

Can IRF3709ZL operate reliably with 4.5 V gate drive in synchronous buck topologies?

Yes - IRF3709ZL is fully characterized down to 4.5 V gate drive, with R_DS(on) = 7.8 mΩ max at V_GS = 4.5 V and I_D = 17 A. Its low gate threshold (1.35–2.25 V) ensures strong enhancement mode behavior, and typical Q_g remains 17 nC, enabling clean switching with standard 4.5 V PWM controllers.

How does the body diode performance impact synchronous rectification efficiency?

The IRF3709ZL's body diode exhibits V_SD = 1.0 V max at I_S = 17 A and t_rr = 16–24 ns, with Q_rr = 6.2–9.3 nC. These parameters reduce reverse recovery loss and associated voltage spikes during dead-time commutation, directly improving light-load efficiency and easing EMI filtering requirements in synchronous buck converters.

Is IRF3709ZL suitable for avalanche-prone applications like motor drives or inductive loads?

Yes - IRF3709ZL is 100% tested for Unclamped Inductive Switching (UIS) per JEDEC JESD24-11, with E_AS = 250 mJ at I_AS = 17 A and V_DD = 15 V. Its rugged planar structure and guaranteed avalanche energy make it appropriate for brushed DC motor H-bridges and solenoid drivers where inductive kickback is routine.

IRF3709ZL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 87A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.3mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2130 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRF3709ZL FAQ

1.How can I place an order for IRF3709ZL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3709ZL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3709ZL reliable?

The price and inventory of IRF3709ZL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3709ZL is usually 5 days.

3.What payment methods are accepted for IRF3709ZL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3709ZL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3709ZL?

IRF3709ZL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3709ZL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3709ZL?

For technical support, including IRF3709ZL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3709ZL requirements.

6.How does Aetrix verify that IRF3709ZL is sourced from the original manufacturer or authorized distributors?

All IRF3709ZL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3709ZL meets industry standards.

7.What is the process for return or replacement of IRF3709ZL?

All IRF3709ZL units undergo pre-shipment inspection (PSI). If there is an issue with IRF3709ZL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3709ZL part is unused and in its original packaging.

Return procedure for IRF3709ZL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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