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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3709ZPBF

Name: IRF3709ZPBF
Brand: Infineon Technologies
SKU: IRF3709ZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3709ZPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF3709ZPBF.pdf

Description:: MOSFET N-CH 30V 87A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF3709ZPBF from Infineon Technologies is an N-channel enhancement-mode HEXFET^® Power MOSFET in D2PAK (TO-263) package, designed as a low-side synchronous rectifier or control FET in high-frequency DC/DC converters. It delivers 6.3 mΩ R_DS(on) at V_GS = 10 V, 17 nC total gate charge, and 30 V V_DSS, enabling efficient operation in computer processor power stages with 4.5 V gate drive compatibility.

For engineers reviewing the IRF3709ZPBF datasheet, IRF3709ZPBF pinout, IRF3709ZPBF application, or IRF3709ZPBF equivalent, key selection criteria include its 6.3 mΩ on-resistance at 10 V, 17 nC Q_g, avalanche-rated construction, body diode recovery time (t_rr = 16–24 ns), and thermal resistance R_θJC = 1.89 °C/W - all critical for synchronous buck converter efficiency and reliability.

Technical Context

This MOSFET employs planar silicon process technology optimized for low conduction loss and fast switching in hard-switched topologies. Its gate threshold voltage (V_GS(th) = 1.35–2.25 V) supports logic-level drive, while the 5.0 mΩ typical R_DS(on) at 25°C and 6.2 mΩ at 125°C ensures stable performance across temperature.

The device integrates a robust intrinsic body diode with 1.0 V forward drop at 17 A and 6.2–9.3 nC reverse recovery charge (Q_rr). Its clamped inductive avalanche rating (E_AS = 250 mJ at I_AS = 17 A) enables rugged operation under transient overcurrent conditions without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum drain-source blocking voltage; defines safe operating range in 12 V and 24 V input rails.
R_DS(on) max	6.3 mΩ @ V_GS = 10 V - Determines conduction loss in high-current paths; enables <1 W dissipation at 40 A RMS.
Q_g	17 nC - Total gate charge required to fully switch; directly impacts driver sizing and switching loss at >500 kHz.
I_D @ T_C = 25°C	87 A - Continuous drain current rating at case temperature 25°C; sets maximum steady-state load capability.
R_θJC	1.89 °C/W - Junction-to-case thermal resistance; enables direct heatsink mounting with predictable thermal rise.
t_rr	16–24 ns - Body diode reverse recovery time; minimizes shoot-through risk and cross-conduction loss in synchronous FETs.
E_AS	250 mJ - Single-pulse avalanche energy; allows safe operation during inductive turn-off transients without failure.

Pinout & Package

IRF3709ZPBF uses the D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard G-D-S order (Gate–Drain–Source) when viewed from the top with marking side up and leads pointing downward.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Receives gate drive signal; requires ≤2.25 V threshold to initiate conduction; sensitive to ESD and dV/dt coupling.
Drain (D)	High-side current path terminal	Connected to PCB copper pour for heat sinking; electrically tied to source of upper FET in half-bridge; carries full output current.
Source (S)	Reference node for gate drive and current return	Serves as local ground reference for gate driver IC; must be low-inductance path to minimize ringing and false turn-on.

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V	Enables direct interface with 5 V or 3.3 V PWM controllers without level-shifting; reduces gate drive complexity.
Fully characterized avalanche	Rated for 250 mJ single-pulse energy; eliminates need for external avalanche protection in compact DC/DC designs.
Optimized body diode	1.0 V V_SD and 6.2–9.3 nC Q_rr reduce reverse recovery losses and improve light-load efficiency in synchronous rectification.
Lead-free and RoHS-compliant	Meets IPC/JEDEC J-STD-020 reflow profile; compatible with Pb-free assembly processes up to 260°C peak.

Applications

Server VRM Power Stage

Laptop CPU Core Supply

Use Scenario: High-current, multi-phase buck converter delivering 1–2 V @ >100 A to Intel/AMD processors in data center servers.

IC Role / Device Role / Timing Role: Low-side synchronous FET; commutates return current path during bottom-switch conduction phase.

Use Value: 6.3 mΩ R_DS(on) and 17 nC Q_g reduce both conduction and switching losses, improving full-load efficiency by ≥1.2% versus legacy 8 mΩ parts.

Use Scenario: Compact 2–3 phase buck regulator powering mobile CPU cores in thin-and-light notebooks with strict thermal envelope.

IC Role / Device Role / Timing Role: Control FET in high-side position; switched at 500–1000 kHz with adaptive dead-time control.

Use Value: 1.89 °C/W R_θJC enables direct thermal pad attachment to internal copper layers, limiting junction temperature rise to <35°C at 45 A.

GPU Voltage Regulator

ASIC Power Delivery Network

Use Scenario: High-dI/dt transient response supply for discrete graphics cards requiring >300 A peak current with <10 µs load-step recovery.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase interleaved topology; body diode conducts during dead-time intervals.

Use Value: 16–24 ns t_rr and low Q_rr minimize voltage overshoot and cross-conduction, preserving stability during rapid load transients.

Use Scenario: Point-of-load regulator for AI accelerators or network processors with tight voltage tolerance (±10 mV) and dynamic current slew rates >500 A/µs.

IC Role / Device Role / Timing Role: Low-side FET in 4-phase parallel configuration; operated with phase interleaving to reduce input/output ripple.

Use Value: Avalanche rating (250 mJ) absorbs inductive kickback from PCB trace inductance during fault events, preventing catastrophic failure without added protection circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3713PBF	R_DS(on) = 7.0 mΩ @ 4.5 V; Q_g = 15 nC; same D2PAK package	Optimized for 4.5 V gate drive only; lower V_DSS (25 V) limits use in 24 V input systems	Select when gate drive is strictly 3.3–4.5 V and input voltage ≤19 V; trade-off is reduced avalanche margin.
SI7850DP-T1-GE3	R_DS(on) = 5.8 mΩ @ 10 V; Q_g = 22 nC; SO-8 package (no exposed pad)	Smaller footprint but higher R_θJA (50 °C/W); lacks avalanche rating	Choose for space-constrained board layouts where thermal budget permits higher ambient rise; not suitable for unclamped inductive loads.

Compared with IRF3709ZPBF, IRL3713PBF offers lower gate charge but reduced voltage rating and avalanche capability, while SI7850DP-T1-GE3 provides lower on-resistance in a smaller package but sacrifices thermal performance and ruggedness - making IRF3709ZPBF optimal for thermally demanding, high-reliability synchronous buck stages.

Availability

IRF3709ZPBF is available at Aetrix Electronics and suitable for server VRM power stages, laptop CPU core supplies, and GPU voltage regulators requiring stable component supply, long-term manufacturability, and consistent parametric performance across production lots.

Supply support for IRF3709ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRF HEXFET^® product line targets high-efficiency power conversion in computing, telecom, and industrial SMPS, emphasizing low R_DS(on), fast switching, and rugged avalanche performance for synchronous rectification and control FET roles.

FAQ

What is the maximum continuous drain current for IRF3709ZPBF at 100°C case temperature?

The maximum continuous drain current is 62 A at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating and ensures safe operation within the SOA boundary defined in Figure 8 of the datasheet, assuming proper PCB copper area and heatsinking.

Does IRF3709ZPBF support 4.5 V gate drive in practical applications?

Yes - the device is characterized down to 4.5 V gate drive, with R_DS(on) = 7.8 mΩ max at that voltage. Its 1.35–2.25 V V_GS(th) ensures reliable turn-on with standard 5 V logic drivers, and the low Q_g (17 nC) minimizes switching delay and Miller plateau duration under 4.5 V conditions.

How does the body diode performance compare to discrete Schottky alternatives?

The integrated body diode has V_SD = 1.0 V at 17 A and t_rr = 16–24 ns, offering lower forward drop than most 30 V Schottkys but slower recovery than ultrafast types. Its Q_rr (6.2–9.3 nC) is significantly lower than older MOSFETs, reducing cross-conduction loss - though discrete Schottkys remain preferred where <10 ns t_rr is mandatory.

Can IRF3709ZPBF be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (see Fig 4) ensures inherent current sharing stability. Parallel operation requires matched gate drive impedance, symmetrical layout, and individual gate resistors (≥5 Ω) to suppress oscillation; thermal coupling via shared heatsink further improves balance under high-current conditions.

IRF3709ZPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 87A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.3mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2130 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF3709ZPBF FAQ

1.How can I place an order for IRF3709ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3709ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3709ZPBF reliable?

The price and inventory of IRF3709ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3709ZPBF is usually 5 days.

3.What payment methods are accepted for IRF3709ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3709ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3709ZPBF?

IRF3709ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3709ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3709ZPBF?

For technical support, including IRF3709ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3709ZPBF requirements.

6.How does Aetrix verify that IRF3709ZPBF is sourced from the original manufacturer or authorized distributors?

All IRF3709ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3709ZPBF meets industry standards.

7.What is the process for return or replacement of IRF3709ZPBF?

All IRF3709ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3709ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3709ZPBF part is unused and in its original packaging.

Return procedure for IRF3709ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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