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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3709ZSTRLPBF

Name: IRF3709ZSTRLPBF
Brand: Infineon Technologies
SKU: IRF3709ZSTRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3709ZSTRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF3709ZSTRLPBF.pdf

Description:: MOSFET N-CH 30V 87A D2PAK

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Product details

Overview

IRF3709ZSTRLPBF from Infineon Technologies is a 30V N-channel HEXFET Power MOSFET in D2PAK (TO-263) package, optimized for high-frequency synchronous buck converters in CPU power delivery. It delivers 6.3 mΩ R_DS(on) at V_GS = 4.5 V, 17 nC total gate charge, and 87 A continuous drain current at T_C = 25°C, enabling efficient low-voltage, high-current switching in server VRMs.

For engineers reviewing the IRF3709ZSTRLPBF datasheet, IRF3709ZSTRLPBF pinout, IRF3709ZSTRLPBF application, or IRF3709ZSTRLPBF equivalent, key selection criteria include its low R_DS(on) at 4.5 V gate drive, fully characterized avalanche capability (E_AS = 250 mJ), body diode reverse recovery performance (Q_rr = 6.2–9.3 nC), and thermal resistance (R_θJC = 1.89 °C/W).

Technical Context

This MOSFET employs planar silicon HEXFET architecture with integral fast-recovery body diode, designed specifically for synchronous rectification in non-isolated DC/DC converters. Its gate threshold voltage (V_GS(th) = 1.35–2.25 V) and negative temperature coefficient (−5.5 mV/°C) support stable turn-on across junction temperatures up to 175°C.

The device features low output charge (Q_oss = 11 nC) and reverse transfer capacitance (C_rss = 220 pF), minimizing C_dv/dt induced turn-on risk in high-dV/dt switching nodes. Gate charge partitioning (Q_gs1 = 4.4 nC, Q_gd = 6.0 nC, Q_sw = 7.7 nC) supports precise timing control in dual-MOSFET topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient overshoot margins in point-of-load converters.
R_DS(on) max @ 4.5 V	6.3 mΩ - Enables <1 W conduction loss at 40 A RMS in 12 V→1.2 V buck stages with minimal heatsinking.
Q_g	17 nC - Low gate drive energy reduces controller loading and enables use with standard PWM ICs (e.g., ISL63xx, MP2315).
I_D @ T_C = 25°C	87 A - Supports high-current phases in multi-phase CPU VRMs without paralleling.
E_AS	250 mJ - Rated single-pulse avalanche energy ensures robustness against inductive switching faults during startup or overload.
Q_rr	6.2–9.3 nC - Low reverse recovery charge minimizes cross-conduction losses and EMI in synchronous FET position.
R_θJC	1.89 °C/W - Enables direct heatsink mounting for thermal management in compact VRM layouts.

Pinout & Package

IRF3709ZSTRLPBF uses the surface-mount D2PAK (TO-263) package with exposed drain pad for enhanced thermal performance and mechanical stability on PCBs.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path collector	Internally connected to large copper tab; must be soldered to PCB thermal pad for R_θJC = 1.89 °C/W operation.
Source	Current return path / reference node	Common connection point for gate driver return and sense resistor; low-inductance layout critical for shoot-through immunity.
Gate	Control terminal	High-impedance input requiring <10 Ω series gate resistor to damp ringing and limit dI/dt during switching.

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V	6.3 mΩ - Enables direct compatibility with 5 V logic-level gate drivers and eliminates need for level-shifting in VRM control ICs.
Fully characterized avalanche	E_AS = 250 mJ - Guarantees safe operation under unclamped inductive switching without external snubbers.
Optimized body diode	Q_rr = 6.2–9.3 nC, t_rr = 16–24 ns - Reduces dead-time losses and improves efficiency in synchronous rectifier mode.
Lead-free and RoHS compliant	Pb-free plating and halogen-free molding compound - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for reflow assembly.

Applications

Server CPU Voltage Regulator Modules

GPU Power Delivery Systems

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.5 V at >300 A to modern x86 and ARM-based server CPUs.

IC Role / Device Role / Timing Role: Synchronous FET (low-side switch) operating at 300–1000 kHz with precise dead-time control.

Use Value: 6.3 mΩ R_DS(on) at 4.5 V enables >95% efficiency at full load while maintaining thermal margin below 100°C case temperature.

Use Scenario: Compact, high-density VRM on graphics card PCB delivering 0.9–1.2 V at up to 200 A to discrete GPUs.

IC Role / Device Role / Timing Role: Control FET (high-side switch) in dual-MOSFET half-bridge with fast turn-off (t_f = 4.7 ns) to minimize overlap loss.

Use Value: Low Q_gd/Q_gs1 ratio reduces susceptibility to C_dv/dt turn-on during high dV/dt transitions at the switching node.

Industrial PLC Power Supplies

Telecom Base Station DC/DC Converters

Use Scenario: 24 V input-to-5 V/12 V isolated or non-isolated converter powering I/O modules and microcontrollers in harsh environments.

IC Role / Device Role / Timing Role: Primary-side switching FET in active-clamp forward or synchronous buck topology.

Use Value: 175°C maximum junction temperature and −55°C to +175°C storage range ensure reliability across extended industrial temperature profiles.

Use Scenario: Intermediate bus converter (48 V → 12 V) feeding distributed power architecture in 5G radio units.

IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier in secondary-side synchronous rectification stage.

Use Value: Low Q_oss (11 nC) and C_oss (450 pF) reduce switching losses at 500 kHz–1 MHz frequencies, improving power density.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF3708ZSTRLPBF	R_DS(on) = 7.5 mΩ @ 4.5 V; Q_g = 15 nC; lower current rating (75 A)	Suitable for lower-power VRMs where thermal margin allows higher R_DS(on)	Select when cost optimization is prioritized over peak efficiency at >50 A loads.
IPB054N03LGATMA1	R_DS(on) = 5.4 mΩ @ 4.5 V; Q_g = 22 nC; TSD package (TO-220FP)	Better conduction loss but higher gate drive demand; requires larger gate driver capability	Prefer when lowest possible R_DS(on) is critical and gate drive strength permits higher Q_g.

Compared with IRF3709ZSTRLPBF, IRF3708ZSTRLPBF trades 1.2 mΩ higher on-resistance for reduced gate charge and cost, while IPB054N03LGATMA1 improves conduction loss by 15% but increases switching loss due to +30% Q_g, demanding careful gate driver sizing.

Availability

IRF3709ZSTRLPBF is available at Aetrix Electronics and suitable for server CPU VRMs, GPU power delivery systems, and industrial PLC power supplies requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF3709ZSTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET Power MOSFET product line, engineered for high-efficiency, high-frequency DC/DC conversion in computing and communications infrastructure where low gate charge and robust avalanche performance are essential.

FAQ

What is the maximum continuous drain current for IRF3709ZSTRLPBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 62 A, derated linearly from 87 A at 25°C using the specified derating factor of 0.53 W/°C and R_θJC = 1.89 °C/W. This value assumes proper PCB copper area and thermal interface to maintain case temperature.

Does IRF3709ZSTRLPBF have a qualified lead-free reflow profile?

Yes - IRF3709ZSTRLPBF is qualified for Pb-free reflow per IPC-J-STD-020, with peak temperature of 260°C for 10 seconds. The device meets JEDEC Level 1 moisture sensitivity and requires no baking prior to assembly when stored per MSL1 handling guidelines.

Can IRF3709ZSTRLPBF be used in avalanche mode for circuit protection?

Yes - it is fully characterized for single-pulse avalanche with E_AS = 250 mJ at T_J = 25°C. Repetitive avalanche is not rated; use only for fault protection during transient events such as inductive kickback or startup surges, with appropriate current limiting and thermal monitoring.

How does the body diode performance compare to discrete Schottky alternatives?

The integrated body diode has V_SD ≤ 1.0 V at 17 A and Q_rr = 6.2–9.3 nC, offering lower forward drop than most 30 V Schottky diodes at high current but higher Q_rr. It eliminates component count and layout complexity in synchronous rectification, though discrete Schottkys may be preferred where ultra-low Q_rr is mandatory.

IRF3709ZSTRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 87A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.3mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2130 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF3709ZSTRLPBF FAQ

1.How can I place an order for IRF3709ZSTRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3709ZSTRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3709ZSTRLPBF reliable?

The price and inventory of IRF3709ZSTRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3709ZSTRLPBF is usually 5 days.

3.What payment methods are accepted for IRF3709ZSTRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3709ZSTRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3709ZSTRLPBF?

IRF3709ZSTRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3709ZSTRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3709ZSTRLPBF?

For technical support, including IRF3709ZSTRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3709ZSTRLPBF requirements.

6.How does Aetrix verify that IRF3709ZSTRLPBF is sourced from the original manufacturer or authorized distributors?

All IRF3709ZSTRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3709ZSTRLPBF meets industry standards.

7.What is the process for return or replacement of IRF3709ZSTRLPBF?

All IRF3709ZSTRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3709ZSTRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3709ZSTRLPBF part is unused and in its original packaging.

Return procedure for IRF3709ZSTRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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