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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3709ZSTRRPBF

Name: IRF3709ZSTRRPBF
Brand: Infineon Technologies
SKU: IRF3709ZSTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3709ZSTRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF3709ZSTRRPBF.pdf

Description:: MOSFET N-CH 30V 87A D2PAK

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Product details

Overview

IRF3709ZSTRRPBF from Infineon Technologies is a 30V, 6.3mΩ N-channel HEXFET Power MOSFET in D2PAK (TO-263) package, optimized for high-frequency synchronous buck converters in CPU power delivery. It delivers 87A continuous drain current at 25°C, features 17nC total gate charge, and supports low-voltage gate drive down to 4.5V - enabling efficient operation with modern PWM controllers in server and desktop VRMs.

For engineers reviewing the IRF3709ZSTRRPBF datasheet, IRF3709ZSTRRPBF pinout, IRF3709ZSTRRPBF application, or IRF3709ZSTRRPBF equivalent, key selection criteria include R_DS(on) at 4.5V, Q_g/Q_gd ratio for C_dv/dt immunity, body diode reverse recovery (Q_rr = 6.2–9.3nC), avalanche ruggedness (E_AS = 250mJ), and thermal resistance (R_θJC = 1.89°C/W).

Technical Context

This MOSFET employs planar silicon HEXFET architecture with fully characterized unclamped inductive switching (UIS) capability and integrated body diode optimized for synchronous rectification. Its gate threshold voltage (1.35–2.25V) and negative temperature coefficient of V_GS(th) (−5.5mV/°C) support stable parallel operation under thermal stress.

The device exhibits low output charge (Q_oss = 11nC) and reverse transfer capacitance (C_rss = 220pF) at V_DS = 15V, enabling fast switching with minimal Miller-induced turn-on risk. Its R_DS(on) increases only 1.8× from 25°C to 125°C (Fig. 4), supporting sustained high-current operation in compact VRM layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30V - Supports 12V input rails with 2× safety margin against transient overvoltage in CPU core supplies.
R_DS(on) max @ V_GS = 4.5V	6.3mΩ - Enables <1.1W conduction loss at 17A DC load in high-efficiency 4-phase VRMs.
Q_g	17nC - Low gate drive energy reduces controller loading and enables >1MHz switching without excessive driver dissipation.
Q_gd/Q_gs1 ratio	6.0nC / 4.4nC ≈ 1.36 - Minimizes C_dv/dt turn-on risk during high-dV/dt node transitions in synchronous FET position.
E_AS	250mJ - Withstands single-pulse inductive energy from 17A current interruption without failure, critical for robustness in transient load steps.
Q_rr	6.2–9.3nC - Low reverse recovery charge reduces shoot-through losses and EMI in high-frequency synchronous rectification.
R_θJC	1.89°C/W - Enables direct heatsink mounting for thermal management in space-constrained VRM PCBs with <10°C junction rise at 87A.

Pinout & Package

Package: D2PAK (TO-263), surface-mount, isolated tab (drain-connected), thermally enhanced for PCB copper pour attachment.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to power ground plane; carries full load current back to input capacitor.
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET control node; requires low-inductance gate loop to minimize ringing and false triggering.
Pin 3 (Drain)	Drain terminal (D)	Switching node connection; ties to inductor input and high-side FET source; electrically connected to exposed tab.

Key Features

Feature	Design Value
Low R_DS(on) at 4.5V	6.3mΩ enables use with 5V or 3.3V gate drivers in modern multiphase controllers without efficiency penalty.
Fully characterized avalanche	250mJ single-pulse rating ensures reliable operation during load dump or inductor saturation events in VRMs.
Optimized body diode	Q_rr = 6.2–9.3nC and t_rr = 16–24ns reduce cross-conduction losses and improve light-load efficiency in synchronous mode.
Thermally enhanced package	D2PAK's 1.89°C/W R_θJC allows direct thermal coupling to heatsink or large copper area, sustaining 87A continuous current.

Applications

Server CPU Voltage Regulator Modules

Desktop GPU Power Delivery

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.3V at up to 200A to Intel/AMD server CPUs.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side FET) operating at 300–1000kHz with precise dead-time control.

Use Value: 6.3mΩ R_DS(on) at 4.5V minimizes conduction loss; low Q_gd/Q_gs1 prevents C_dv/dt turn-on during 10V/ns node transitions.

Use Scenario: Compact 4–6 phase VRM on gaming GPU PCBs delivering 0.9–1.2V at 80–120A under transient loads.

IC Role / Device Role / Timing Role: Low-side switching element in interleaved synchronous buck stages with tight layout constraints.

Use Value: D2PAK package enables high-current PCB routing; 250mJ E_AS withstands inductor saturation during rapid GPU clock scaling.

Industrial PLC I/O Power Supplies

Telecom Baseband Power Management

Use Scenario: 24V-input, 3.3V/5V/12V isolated or non-isolated DC/DC modules powering programmable logic controllers.

IC Role / Device Role / Timing Role: Primary switch in secondary-side synchronous rectification stage for improved efficiency and thermal performance.

Use Value: 87A continuous current rating supports high-reliability derating; −55°C to +175°C T_STG/T_J range ensures operation in harsh industrial enclosures.

Use Scenario: Point-of-load (POL) regulator in 48V telecom systems converting to 1.8V/3.3V for FPGA and DSP cores.

IC Role / Device Role / Timing Role: High-frequency (≥500kHz) synchronous FET in compact, high-density POL modules.

Use Value: Low Q_oss (11nC) and C_rss (220pF) reduce switching loss and EMI; lead-free (PbF) compliance meets RoHS/REACH requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3713PbF	R_DS(on) = 5.8mΩ @ 4.5V; Q_g = 19nC; TO-220AB package; higher R_θJA (40°C/W)	Limited to lower-power, lower-frequency designs due to larger thermal resistance and no D2PAK thermal pad.	Prefer when board-level heatsinking is impractical and cost sensitivity outweighs thermal performance.
SiR872DP-T1-GE3	R_DS(on) = 5.2mΩ @ 4.5V; Q_g = 22nC; PowerPAK SO-8; lower E_AS (120mJ); no UIS characterization	Suitable for space-constrained consumer-grade POLs but not recommended for mission-critical server VRMs requiring proven avalanche ruggedness.	Select for high-density consumer electronics where footprint and R_DS(on) dominate; avoid in high-reliability industrial/server applications.

Compared with IRF3709ZSTRRPBF, IRL3713PbF trades thermal performance for package simplicity and cost, while SiR872DP-T1-GE3 offers lower R_DS(on) in a smaller footprint but sacrifices avalanche robustness and thermal margin - making IRF3709ZSTRRPBF optimal for thermally demanding, high-reliability synchronous buck topologies.

Availability

IRF3709ZSTRRPBF is available at Aetrix Electronics and suitable for server CPU VRMs, GPU power delivery, industrial PLC I/O supplies, and telecom baseband POL regulators requiring stable component supply across long production lifecycles.

Supply support for IRF3709ZSTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRF HEXFET® Power MOSFET product line was engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing and communications infrastructure - emphasizing low gate charge, avalanche ruggedness, and thermally optimized packaging.

FAQ

Is IRF3709ZSTRRPBF suitable for synchronous rectification in a 1MHz buck converter?

Yes. With Q_g = 17nC, Q_oss = 11nC, and C_rss = 220pF at 15V, it supports clean 1MHz switching when paired with a low-impedance gate driver and proper PCB layout. Its R_DS(on) remains stable across temperature, and its low Q_gd/Q_gs1 ratio mitigates C_dv/dt turn-on risk at typical node dV/dt rates.

What is the maximum continuous drain current at 100°C case temperature?

The datasheet specifies ID @ TC = 100°C as 62A at V_GS = 10V. This reflects thermal derating due to reduced channel mobility and increased R_DS(on); actual usable current depends on PCB copper area, heatsinking, and ambient airflow - design margin should maintain T_J ≤ 150°C per absolute maximum ratings.

Does IRF3709ZSTRRPBF have a qualified avalanche rating for repetitive operation?

No. The datasheet provides only single-pulse avalanche energy (E_AS = 250mJ) and current (I_AR = 87A). Repetitive avalanche is not characterized or guaranteed; system design must avoid repeated UIS events through proper snubbing, layout, and controller protection schemes.

Can this MOSFET be used in parallel configurations?

Yes - its negative V_GS(th) temperature coefficient (−5.5mV/°C) promotes current sharing under thermal imbalance. However, matched gate drive impedance, symmetrical layout, and individual gate resistors are required to ensure balanced dynamic current distribution and prevent oscillation or localized overheating.

IRF3709ZSTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 87A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.3mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2130 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF3709ZSTRRPBF FAQ

1.How can I place an order for IRF3709ZSTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3709ZSTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3709ZSTRRPBF reliable?

The price and inventory of IRF3709ZSTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3709ZSTRRPBF is usually 5 days.

3.What payment methods are accepted for IRF3709ZSTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3709ZSTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3709ZSTRRPBF?

IRF3709ZSTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3709ZSTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3709ZSTRRPBF?

For technical support, including IRF3709ZSTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3709ZSTRRPBF requirements.

6.How does Aetrix verify that IRF3709ZSTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRF3709ZSTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3709ZSTRRPBF meets industry standards.

7.What is the process for return or replacement of IRF3709ZSTRRPBF?

All IRF3709ZSTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3709ZSTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3709ZSTRRPBF part is unused and in its original packaging.

Return procedure for IRF3709ZSTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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