Infineon Technologies IRF3710L

Overview

IRF3710L from Infineon Technologies (formerly International Rectifier) is a through-hole N-channel enhancement-mode HEXFET® Power MOSFET rated for 100 V V(BR)DSS, 57 A continuous drain current at 25°C, and 23 mΩ RDS(on) at VGS = 10 V. It features fully avalanche-rated ruggedness, 175°C maximum junction temperature, and is optimized for high-current DC-DC converters, motor drives, and industrial power switching where low conduction loss and reliable unclamped inductive switching are required.

For engineers reviewing the IRF3710L datasheet, IRF3710L pinout, IRF3710L application, or IRF3710L equivalent, key selection criteria include its 100 V breakdown voltage, 23 mΩ on-resistance, 130 nC total gate charge, TO-262 package thermal performance, and verified single-pulse avalanche energy of 1060 mJ - all critical for hard-switched, high-reliability power stage design.

Technical Context

This MOSFET employs advanced planar HEXFET processing to minimize RDS(on) per die area while maintaining robust safe operating area (SOA) and fast switching dynamics. Its gate threshold voltage (2.0–4.0 V) enables direct drive from 3.3 V/5 V logic with adequate margin, and its 32 S forward transconductance supports stable current regulation under varying load conditions.

The device integrates a low-VF body diode (1.2 V at 28 A, TJ = 25°C) with 140–220 ns reverse recovery time and 670–1010 nC Qrr, enabling efficient synchronous rectification and freewheeling in buck, half-bridge, and H-bridge topologies without external Schottky supplementation.

Key Specifications

Pinout & Package

The IRF3710L uses the TO-262 (I²PAK) through-hole package - a low-profile variant of the D2Pak designed for PCB-mounted applications requiring mechanical stability and improved thermal coupling over SO-8 or DPAK. It features isolated tab (drain-connected), three leads, and 1.3 W/°C linear derating above 25°C case temperature.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Compared with STP110N10F7 and IXTP110N10T, the IRF3710L offers balanced trade-offs: moderate RDS(on) and Qg in a low-profile TO-262 package with full 175°C rating - ideal for space-constrained, thermally demanding industrial power stages where both conduction and switching losses must be managed.

Availability

IRF3710L is available at Aetrix Electronics and suitable for motor drive inverters, industrial DC-DC converters, uninterruptible power supplies, and high-current relay replacements requiring stable component supply across multi-year production cycles.

Supply support for IRF3710L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRF3710L belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-current, high-reliability switching in industrial motor controls, power supplies, and energy infrastructure where ruggedness and thermal stability are critical.

FAQ

Is the IRF3710L pin-compatible with the surface-mount IRF3710S?

No. The IRF3710L uses a TO-262 (I²PAK) through-hole package with three gull-wing leads and an isolated drain tab, while the IRF3710S uses a D2Pak surface-mount package with bent leads and identical pinout orientation but different mounting mechanics and thermal interface requirements. Mechanical and soldering processes are not interchangeable.

What is the maximum recommended gate resistor value for 100 kHz switching?

For reliable 100 kHz hard switching, a gate resistor of ≤2.5 Ω is recommended to ensure td(off) ≤45 ns and suppress gate oscillation caused by 43 nC Miller charge. Higher values increase switching losses and risk shoot-through in half-bridge configurations; use active gate drivers with ≥2 A sink/source capability for optimal control.

Does the IRF3710L require a gate driver IC when driven from a microcontroller GPIO?

Yes. While the gate threshold is 2.0–4.0 V, driving directly from a 3.3 V or 5 V MCU GPIO risks incomplete turn-on (increasing RDS(on) and conduction loss) and slow switching due to insufficient peak current. A dedicated gate driver (e.g., TC4420 or IRS2004) is required to deliver the 130 nC charge within nanoseconds and maintain stable 10 V gate voltage under load.

Can the IRF3710L replace the IRF540N in existing designs?

Yes, with verification. The IRF3710L offers lower RDS(on) (23 mΩ vs. 44 mΩ), higher ID (57 A vs. 33 A), and higher V(BR)DSS (100 V vs. 100 V), but has higher Qg (130 nC vs. 71 nC). Layout and gate drive must be reviewed to handle increased capacitive loading and ensure SOA compliance at higher current levels.