Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3710LPBF

Name: IRF3710LPBF
Brand: Infineon Technologies
SKU: IRF3710LPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF3710LPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF3710LPBF.pdf

Description:: MOSFET N-CH 100V 57A TO262

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,479

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF3710LPBF from Infineon Technologies (formerly International Rectifier) is a 100V, 57A N-channel enhancement-mode HEXFET® Power MOSFET in TO-262 (ISOTOP) package, featuring 23 mΩ R_DS(on) at V_GS = 10 V, fully avalanche-rated, and rated for 175°C operation - deployed in high-current DC-DC converters, motor drives, and uninterruptible power supplies.

For engineers reviewing the IRF3710LPBF datasheet, IRF3710LPBF pinout, IRF3710LPBF application, or IRF3710LPBF equivalent, key selection criteria include its 100V V_DS, 23 mΩ on-resistance, 130 nC total gate charge, rugged avalanche capability (E_AS = 1060 mJ), and thermal resistance of 0.75°C/W junction-to-case - critical for high-efficiency, thermally constrained power switching designs.

Technical Context

This MOSFET employs advanced planar HEXFET processing to minimize conduction loss while maintaining fast switching (t_d(on) = 12 ns, t_f = 47 ns) and robust dv/dt immunity (5.8 V/ns). Its body diode exhibits 1.2 V forward drop at 28 A and 140–220 ns reverse recovery time, enabling synchronous rectification and hard-switched topologies.

The device is fully specified for repetitive avalanche (I_AR = 28 A, E_AR = 20 mJ) and single-pulse avalanche (E_AS = 1060 mJ), with gate threshold voltage tightly controlled (2.0–4.0 V) and transconductance of 32 S - supporting stable gate drive across temperature and load conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V and 96 V bus systems with margin against transients and ringing.
R_DS(on)	23 mΩ @ V_GS = 10 V - enables ≤1.5 W conduction loss at 57 A DC, reducing heatsink requirements.
I_D (T_C = 25°C)	57 A - delivers high continuous current in PCB-mounted, forced-air-cooled applications.
Q_g	130 nC - determines gate driver power and switching loss; requires ≥1 A peak drive for <100 ns turn-on.
E_AS	1060 mJ - withstands single-energy surges without failure, eliminating need for external snubbers in inductive loads.
R_θJC	0.75 °C/W - enables direct heatsink mounting for thermal management in high-power density layouts.
t_r/t_f	58 ns / 47 ns - supports >100 kHz switching in SMPS while limiting EMI generation.

Pinout & Package

IRF3710LPBF uses the TO-262 (ISOTOP) surface-mount package - a 3-pin, isolated-tab variant of TO-220 with enhanced thermal performance and creepage clearance for industrial mains-connected equipment.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from source to load	Electrically connected to metal tab; must be thermally and electrically tied to heatsink or ground plane.
Source	Reference node for gate drive and current return	Low-inductance connection required to minimize switching noise and gate oscillation.
Gate	Control terminal for channel conduction	High-impedance input requiring low-impedance drive (<2.5 Ω series resistance recommended).

Key Features

Feature	Design Value
Fully avalanche-rated	Withstands 1060 mJ single-pulse and 20 mJ repetitive avalanche energy - eliminates need for external clamping in inductive switching.
Ultra-low R_DS(on)	23 mΩ at 10 V gate drive - reduces conduction losses by >30% vs. legacy 100 V MOSFETs in same package class.
175°C maximum junction temperature	Enables operation in sealed enclosures or high ambient environments without derating below 100°C case temperature.
Low gate charge (Q_g = 130 nC)	Reduces gate driver power dissipation and allows use of cost-effective 1–2 A drivers in high-frequency SMPS.
Robust dv/dt immunity	Rated for 5.8 V/ns - prevents false turn-on during high-speed commutation in half-bridge configurations.

Applications

Motor Drive Inverter

DC-DC Boost Converter

Use Scenario: 3-phase BLDC motor control in HVAC blowers and industrial pumps operating at 48 V bus.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 6-step commutation, handling 57 A peak phase current.

Use Value: Low R_DS(on) minimizes I²R heating during continuous PWM; avalanche rating absorbs back-EMF spikes without snubbers.

Use Scenario: 12 V to 48 V boost stage in telecom power shelves with 20 A output current.

IC Role / Device Role / Timing Role: Main power switch operating at 100–200 kHz with 50% duty cycle and high di/dt.

Use Value: Fast switching (t_f = 47 ns) and low Q_g reduce switching losses; body diode recovery (t_rr = 140 ns) limits shoot-through risk.

Uninterruptible Power Supply (UPS)

Industrial AC-DC Front-End

Use Scenario: Battery-to-AC inverter stage in line-interactive UPS delivering 1 kVA output.

IC Role / Device Role / Timing Role: Output H-bridge switch handling bidirectional 57 A current with 100 V blocking requirement.

Use Value: 175°C rating ensures reliability under sustained overload; R_θJC = 0.75°C/W enables compact heatsinking in space-constrained chassis.

Use Scenario: PFC boost switch in 3 kW industrial rectifier with 90–264 VAC input.

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) or continuous conduction mode (CCM) switch at 65–100 kHz.

Use Value: Avalanche ruggedness handles line surges and transformer leakage energy; low C_oss (410 pF) improves light-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	100 V, 110 A, R_DS(on) = 9.5 mΩ, TO-220FP package, lower R_θJC (1.0°C/W)	Higher current capacity but larger footprint; not pin-compatible due to different leadform and tab isolation.	Preferred for higher-current, lower-loss designs where board space permits TO-220FP mounting.
IXTH50N10L2	100 V, 50 A, R_DS(on) = 22 mΩ, TO-247 package, higher Q_g (160 nC)	Same voltage/current class but higher gate drive demand; superior thermal performance (R_θJC = 0.45°C/W).	Chosen when thermal headroom is critical and TO-247 mechanical fit is acceptable.

Compared with STP110N10F7 and IXTH50N10L2, IRF3710LPBF offers optimal balance of low R_DS(on), moderate gate charge, and TO-262 form factor - making it ideal for space-constrained, medium-power industrial inverters where thermal interface simplicity matters more than absolute minimum on-resistance.

Availability

IRF3710LPBF is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for IRF3710LPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRF3710LPBF belongs to Infineon's legacy HEXFET® Power MOSFET product line - engineered for high-efficiency, high-reliability switching in industrial power conversion, motor control, and energy infrastructure applications.

FAQ

Is IRF3710LPBF RoHS-compliant and lead-free?

Yes. IRF3710LPBF carries the "LPbF" suffix, indicating full compliance with RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 3 marking. It uses matte tin plating over copper leads and contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits.

What is the maximum safe operating area (SOA) limitation at 100°C case temperature?

At T_C = 100°C, the maximum continuous drain current is derated to 40 A per the datasheet's Fig. 9. The SOA curve (Fig. 8) shows that at 100 V V_DS, the device supports ≤10 A DC, or up to 57 A for pulse widths ≤100 µs with duty cycle ≤2%, limited by R_DS(on) and thermal impedance.

Can IRF3710LPBF be used in synchronous rectification topologies?

Yes - its body diode has V_SD = 1.2 V at 28 A and t_rr = 140–220 ns, enabling use in secondary-side synchronous rectification for 48 V output converters. However, external gate control timing must account for diode recovery to avoid cross-conduction; dedicated SR controllers (e.g., IR1167) are recommended.

Does IRF3710LPBF require a gate resistor for stability in hard-switched circuits?

Yes. A 2.5 Ω gate resistor is specified in the datasheet for switching characterization (Fig. 10). For reliable operation, a 2–10 Ω series gate resistor is recommended to dampen ringing, limit peak gate current, and prevent parasitic oscillation - especially when driving from low-impedance sources or with long PCB traces.

IRF3710LPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 57A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 23mOhm @ 28A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3130 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRF3710LPBF FAQ

1.How can I place an order for IRF3710LPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3710LPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3710LPBF reliable?

The price and inventory of IRF3710LPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3710LPBF is usually 5 days.

3.What payment methods are accepted for IRF3710LPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3710LPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3710LPBF?

IRF3710LPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3710LPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3710LPBF?

For technical support, including IRF3710LPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3710LPBF requirements.

6.How does Aetrix verify that IRF3710LPBF is sourced from the original manufacturer or authorized distributors?

All IRF3710LPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3710LPBF meets industry standards.

7.What is the process for return or replacement of IRF3710LPBF?

All IRF3710LPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3710LPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3710LPBF part is unused and in its original packaging.

Return procedure for IRF3710LPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…