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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3710STRR

Name: IRF3710STRR
Brand: Infineon Technologies
SKU: IRF3710STRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3710STRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF3710STRR.pdf

Description:: MOSFET N-CH 100V 57A D2PAK

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Product details

Overview

IRF3710STRR from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in D2PAK (TO-263) package, rated for 100 V V_DS, 57 A continuous drain current at T_C = 25°C, and 23 mΩ R_DS(on) at V_GS = 10 V. It features fully avalanche-rated ruggedness, 175°C maximum junction temperature, and fast switching with 12 ns turn-on delay and 47 ns fall time - deployed in high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF3710STRR datasheet, IRF3710STRR pinout, IRF3710STRR application, or IRF3710STRR equivalent, key selection criteria include verified R_DS(on) at 28 A/10 V, gate charge profile (Q_g = 130 nC), body diode recovery (t_rr = 140–220 ns), thermal resistance (R_θJC = 0.75 °C/W), and D2PAK surface-mount power handling up to 200 W.

Technical Context

This MOSFET employs advanced planar HEXFET processing to minimize on-resistance per die area while maintaining robust avalanche energy rating (E_AS = 1060 mJ). Its gate threshold voltage (V_GS(th)) ranges 2.0–4.0 V, enabling reliable enhancement-mode operation with standard 10 V gate drivers.

The device integrates a low-loss intrinsic body diode (V_SD = 1.2 V at I_S = 28 A, T_J = 25°C) with controlled reverse recovery (Q_rr = 670–1010 nC, di/dt = 100 A/µs). Thermal design is supported by validated junction-to-case resistance (0.75 °C/W) and PCB-mounted junction-to-ambient (40 °C/W).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V bus systems with 2× safety margin against transients
R_DS(on)	23 mΩ max at V_GS = 10 V, I_D = 28 A - enables <1.5 W conduction loss at 57 A
I_D (continuous)	57 A at T_C = 25°C - requires heatsink or copper pour for sustained operation
Q_g	130 nC - determines gate driver current requirement (~1.3 A avg for 100 ns switching)
t_rr	140–220 ns - limits usable switching frequency in hard-switched topologies
E_AS	1060 mJ - withstands single-pulse inductive energy without failure under defined test conditions
R_θJC	0.75 °C/W - defines minimum thermal interface conductance needed between die and heatsink

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (Drain, Source, Gate) with Drain tab electrically connected to pin 2 (tab) and pin 3 (source leads).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab + Pin 2)	Main current path output terminal	Electrically tied to exposed metal tab - must be soldered to large copper area for thermal management and low-inductance return
Source (Pin 1)	Reference node for gate drive and current sensing	Low-side switch reference; connects to ground plane or shunt resistor; carries full load current
Gate (Pin 3)	Control input for channel modulation	High-impedance MOS control node; requires <2.5 Ω series resistance to damp ringing during fast switching

Key Features

Feature	Design Value
Fully avalanche rated	Withstands 1060 mJ single-pulse avalanche energy without degradation - eliminates need for external snubbers in inductive switching
Ultra-low R_DS(on)	23 mΩ at 10 V drive - reduces conduction losses by >30% vs. legacy 100 V MOSFETs in same package
175°C operating junction	Enables operation in sealed enclosures or high-ambient environments without derating below 100°C ambient
Fast body diode recovery	t_rr = 140 ns typical - minimizes cross-conduction loss in synchronous rectification and half-bridge freewheeling
D2PAK thermal performance	R_θJC = 0.75 °C/W - delivers 2.6× better thermal resistance than TO-220 equivalents for same board area

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Buck Converter

Use Scenario: High-current BLDC motor phase leg in industrial automation drives.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge topology; handles 50 A peak current with 20 kHz PWM.

Use Value: 23 mΩ R_DS(on) limits conduction loss to ≤0.58 W at 50 A, reducing heatsink size by 40% vs. 40 mΩ alternatives.

Use Scenario: 12 V → 1 V/100 A point-of-load converter for server CPU VRMs.

IC Role / Device Role / Timing Role: Synchronous rectifier in buck stage; conducts during low-side interval with body diode assist.

Use Value: 140 ns t_rr and 1.2 V V_SD reduce reverse recovery loss by 35% versus standard Schottky-assisted designs.

Uninterruptible Power Supply (UPS) Inverter

Industrial DC Power Distribution Switch

Use Scenario: 48 V battery-fed H-bridge in online UPS output stage delivering 2 kVA sinusoidal AC.

IC Role / Device Role / Timing Role: High-current switching device in full-bridge inverter leg; operates at 16 kHz with soft-switching assist.

Use Value: 1060 mJ E_AS rating ensures survivability during output short-circuit events without desaturation protection.

Use Scenario: 100 A hot-swap and load-switching module in telecom power shelves.

IC Role / Device Role / Timing Role: Main power FET controlling 48 V distribution rail; driven via dedicated load-switch controller.

Use Value: 57 A continuous rating at 25°C case temperature enables 100% duty-cycle operation with minimal derating on 2 oz copper.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	R_DS(on) = 11.5 mΩ (lower), Q_g = 95 nC (lower), but V_GS(th) = 2.5–4.5 V (wider spread)	Better efficiency at light loads due to lower Q_g; less predictable turn-on timing in gate-threshold-sensitive circuits	Select when minimizing switching loss dominates over gate drive simplicity
IXTH110N10L2	R_DS(on) = 10.5 mΩ, avalanche rated, but TO-247 package - higher R_θJA (60 °C/W) and through-hole mounting	Superior thermal headroom in forced-air cooling; incompatible with D2PAK footprint and reflow process	Select when ultimate power density is secondary to serviceability and thermal margin

Compared with STP110N10F7 and IXTH110N10L2, IRF3710STRR offers the best balance of D2PAK manufacturability, proven avalanche ruggedness, and gate drive compatibility with legacy 10 V controllers - critical for cost-sensitive industrial replacements.

Availability

IRF3710STRR is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and industrial DC distribution systems requiring stable component supply and long-term production continuity.

Supply support for IRF3710STRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with roots in International Rectifier's pioneering HEXFET® technology.

The IRF3710STRR belongs to the legacy HEXFET® Power MOSFET product line, engineered specifically for high-current, medium-voltage switching in industrial power conversion where reliability under repetitive stress and thermal cycling is paramount.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRF3710STRR supports 40 A continuous drain current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and requires adequate PCB copper area or heatsinking to maintain safe junction temperature.

Is the body diode suitable for synchronous rectification without external Schottky assistance?

Yes - the intrinsic body diode has V_SD = 1.2 V at 28 A and t_rr = 140–220 ns, making it viable for synchronous rectification in buck converters up to ~200 kHz. However, efficiency gains diminish above 100 kHz due to Q_rr-related losses.

Does IRF3710STRR support 5 V logic-level gate drive?

No - its gate threshold voltage range is 2.0–4.0 V, but R_DS(on) is only guaranteed at V_GS = 10 V. At 5 V, R_DS(on) rises significantly (>100 mΩ), increasing conduction loss beyond practical use; a 10 V gate driver is required.

What is the recommended PCB footprint and thermal pad layout?

Per Infineon Application Note AN-994, the D2PAK footprint requires ≥200 mm² exposed copper pad (2-layer, 2 oz copper) connected to internal ground planes via ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch). Minimum solder mask opening matches the tab outline for optimal thermal transfer.

IRF3710STRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 57A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 23mOhm @ 28A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3130 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF3710STRR FAQ

1.How can I place an order for IRF3710STRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3710STRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3710STRR reliable?

The price and inventory of IRF3710STRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3710STRR is usually 5 days.

3.What payment methods are accepted for IRF3710STRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3710STRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3710STRR?

IRF3710STRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3710STRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3710STRR?

For technical support, including IRF3710STRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3710STRR requirements.

6.How does Aetrix verify that IRF3710STRR is sourced from the original manufacturer or authorized distributors?

All IRF3710STRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3710STRR meets industry standards.

7.What is the process for return or replacement of IRF3710STRR?

All IRF3710STRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF3710STRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3710STRR part is unused and in its original packaging.

Return procedure for IRF3710STRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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