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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3710STRRPBF

Name: IRF3710STRRPBF
Brand: Infineon Technologies
SKU: IRF3710STRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3710STRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF3710STRRPBF.pdf

Description:: MOSFET N-CH 100V 57A D2PAK

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Product details

Overview

IRF3710STRRPBF from Infineon Technologies (formerly International Rectifier) is a 100V, 57A N-channel enhancement-mode HEXFET® Power MOSFET in D2Pak (TO-263) package, featuring 23 mΩ R_DS(on) at V_GS = 10 V, 130 nC total gate charge, and full avalanche rating. It serves as a high-current switching element in DC-DC converters, motor drives, and power supplies operating up to 175°C junction temperature.

For engineers reviewing the IRF3710STRRPBF datasheet, IRF3710STRRPBF pinout, IRF3710STRRPBF application, or IRF3710STRRPBF equivalent, key selection criteria include its 100V V_DS, 23 mΩ on-resistance, 130 nC Q_g, 1060 mJ E_AS, and D2Pak thermal performance (R_θJC = 0.75°C/W).

Technical Context

This MOSFET employs advanced silicon processing for ultra-low conduction loss and robust unclamped inductive switching capability. Its 100V breakdown voltage and 28A avalanche current rating support reliable operation under transient overvoltage conditions in hard-switched topologies.

The device exhibits fast switching with 12 ns turn-on delay, 58 ns rise time, and 47 ns fall time at V_DD = 50 V, ID = 28 A, RG = 2.5 Ω. Its body diode shows 1.2 V forward drop at 28 A and 140–220 ns reverse recovery time, enabling moderate-frequency synchronous rectification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Withstands 100 V drain-source blocking voltage before breakdown.
R_DS(on)	23 mΩ @ V_GS = 10 V, I_D = 28 A - Enables low conduction loss in high-current 12–48 V systems.
I_D (continuous)	57 A @ T_C = 25°C - Supports high steady-state load currents with adequate heatsinking.
Q_g	130 nC - Determines gate drive power requirement and switching speed trade-off.
E_AS	1060 mJ - Specifies single-pulse avalanche energy handling without failure.
R_θJC	0.75 °C/W - Enables efficient heat transfer from junction to case in surface-mount thermal design.
t_rr	140–220 ns - Defines body diode recovery behavior during commutation in buck or half-bridge circuits.

Pinout & Package

The IRF3710STRRPBF is housed in a surface-mount D2Pak (TO-263) package with exposed drain pad for thermal and electrical connection. The package supports high-power dissipation (200 W at T_C = 25°C) and features low internal inductance for fast switching.

Pin/Terminal	Circuit Role	Design Meaning
Tab / Pin 2 (Drain)	Main current path output	Electrically and thermally connected to die drain; must be soldered to large copper area for thermal management.
Pin 1 (Gate)	Control input	Receives 10 V logic-level signal to fully enhance channel; requires low-impedance driver due to 130 nC Q_g.
Pin 3 (Source)	Reference node / return path	Serves as common reference for gate drive and load return; connects to PCB ground plane with minimal inductance.

Key Features

Feature	Design Value
Fully avalanche-rated	Withstands 1060 mJ single-pulse avalanche energy without degradation-critical for inductive load switching reliability.
Ultra-low R_DS(on)	23 mΩ enables <1.5 W conduction loss at 57 A, reducing thermal stress in high-current DC-DC stages.
High-temperature operation	Rated for continuous operation up to +175°C junction temperature-suitable for sealed or high-ambient environments.
Fast switching with low Q_gd/Q_g	43 nC Miller charge relative to 130 nC total gate charge improves immunity to dv/dt-induced turn-on.
Lead-free and RoHS-compliant	Meets IPC/JEDEC J-STD-020 reflow profile; compatible with standard Pb-free assembly processes.

Applications

Motor Drive Inverter Stage

DC-DC Synchronous Buck Converter

Use Scenario: High-current H-bridge driving 24–48 V brushed DC or BLDC motors in industrial automation.

IC Role / Device Role / Timing Role: Main switching FET in low-side or high-side position; handles 57 A continuous current with 100 V bus margin.

Use Value: 23 mΩ R_DS(on) minimizes I²R losses during PWM conduction, improving efficiency and reducing heatsink size.

Use Scenario: Primary switch in 12 V → 3.3/5 V point-of-load converter for server or telecom power systems.

IC Role / Device Role / Timing Role: High-side power switch operating at 200–500 kHz with synchronous rectification.

Use Value: Fast 58 ns rise time and 47 ns fall time enable high-frequency operation while maintaining low switching loss.

Uninterruptible Power Supply (UPS) Output Stage

Industrial AC-DC Front-End Switch

Use Scenario: Inverter output stage converting 350–400 V DC bus to 120/230 V AC in line-interactive UPS units.

IC Role / Device Role / Timing Role: Low-side switch in full-bridge topology; conducts high peak currents during overload or short-circuit events.

Use Value: 180 A pulsed drain current rating and 1060 mJ avalanche energy ensure fault tolerance during grid transients.

Use Scenario: Active clamp or PFC switch in 1 kW industrial AC-DC power supply with universal input.

IC Role / Device Role / Timing Role: Main switching device in boost PFC stage; blocks 100 V while conducting >40 A average current.

Use Value: 0.75 °C/W R_θJC allows direct mounting to heatsink, supporting high power density without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	100 V, 110 A, 9.5 mΩ R_DS(on), 140 nC Q_g, TO-220FP package	Higher current rating but through-hole mounting; higher thermal resistance (R_θJC = 1.2°C/W)	Prefer when board space permits larger footprint and higher peak current is required.
IXTP110N10T	100 V, 110 A, 10.5 mΩ R_DS(on), 120 nC Q_g, TO-220 package	Lower Q_g than IRF3710STRRPBF but no avalanche rating; not rated for repetitive unclamped inductive switching	Select only in non-inductive or clamped-switching applications where avalanche robustness is not required.

Compared with STP110N10F7 and IXTP110N10T, the IRF3710STRRPBF offers superior avalanche ruggedness and surface-mount compatibility, making it preferred for compact, high-reliability designs where transient overvoltage immunity and thermal performance are critical.

Availability

IRF3710STRRPBF is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRF3710STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices.

The HEXFET® product line was developed to deliver ultra-low on-resistance, fast switching, and rugged avalanche performance for high-efficiency power conversion in industrial, computing, and renewable energy systems.

FAQ

What is the maximum continuous drain current for IRF3710STRRPBF at 100°C case temperature?

The maximum continuous drain current is 40 A at T_C = 100°C, derated from 57 A at 25°C using the linear derating factor of 1.3 W/°C and thermal resistance limits. This value assumes proper PCB copper area and heatsinking per AN-994 layout guidelines.

Is IRF3710STRRPBF suitable for logic-level gate drive?

No-it is not a logic-level MOSFET. Its gate threshold voltage ranges from 2.0 V to 4.0 V, but full enhancement requires V_GS ≥ 10 V to achieve rated 23 mΩ R_DS(on). A dedicated 10–15 V gate driver is required for optimal conduction and switching performance.

Does IRF3710STRRPBF have a built-in body diode, and what are its key characteristics?

Yes-it integrates a monolithic p-n junction body diode with 1.2 V forward voltage at 28 A and 25°C, 140–220 ns reverse recovery time, and 670–1010 nC reverse recovery charge. These values impact efficiency and EMI in freewheeling and synchronous rectification applications.

What is the recommended PCB footprint and thermal relief for IRF3710STRRPBF in D2Pak package?

The recommended footprint follows Infineon's AN-994 guidelines: a minimum 1.5 × 1.5 inch copper pour on inner layers connected via ≥8 thermal vias (0.3 mm diameter) under the exposed drain tab. Solder mask defined pads and controlled reflow profile (peak 260°C, 10 sec) ensure mechanical integrity and thermal performance.

IRF3710STRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 57A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 23mOhm @ 28A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3130 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF3710STRRPBF FAQ

1.How can I place an order for IRF3710STRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3710STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3710STRRPBF reliable?

The price and inventory of IRF3710STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3710STRRPBF is usually 5 days.

3.What payment methods are accepted for IRF3710STRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3710STRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3710STRRPBF?

IRF3710STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3710STRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3710STRRPBF?

For technical support, including IRF3710STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3710STRRPBF requirements.

6.How does Aetrix verify that IRF3710STRRPBF is sourced from the original manufacturer or authorized distributors?

All IRF3710STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3710STRRPBF meets industry standards.

7.What is the process for return or replacement of IRF3710STRRPBF?

All IRF3710STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3710STRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3710STRRPBF part is unused and in its original packaging.

Return procedure for IRF3710STRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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