Infineon Technologies IRF3710ZGPBF

Overview

IRF3710ZGPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, rated for 100V V_DSS, 18 mΩ R_DS(on) at V_GS = 10 V, and 59 A continuous drain current at T_C = 25°C. It serves as a high-efficiency main switch in DC-DC converters, motor drives, and power supplies where low conduction loss and robust avalanche capability are critical.

For engineers reviewing the IRF3710ZGPBF datasheet, IRF3710ZGPBF pinout, IRF3710ZGPBF application, or IRF3710ZGPBF equivalent, key selection factors include its 175°C maximum junction temperature, 120 nC total gate charge, 280 pF effective output capacitance, repetitive avalanche rating up to T_jmax, and TO-220AB thermal resistance of 0.92°C/W (junction-to-case).

Technical Context

This device employs advanced silicon processing to minimize R_DS(on) per die area while maintaining ruggedness against voltage transients. Its dynamic dv/dt rating and 300 mJ single-pulse avalanche energy (tested) support reliable operation in inductive switching circuits with fast di/dt (≤380 A/µs) and unclamped inductive loads.

The MOSFET integrates a low-V_SD (1.3 V) body diode with 50–75 ns reverse recovery time and 100–160 nC Q_rr, enabling synchronous rectification and freewheeling in half-bridge topologies. Gate drive requirements are defined by 82–120 nC Q_g, 19–28 nC Q_gs, and 27–40 nC Q_gd at V_DS = 50 V.

Key Specifications

Pinout & Package

IRF3710ZGPBF is housed in a through-hole TO-220AB package with isolated tab (drain-connected), standardized for mechanical mounting and thermal interface to heatsinks. The package features three leads: Source (S), Drain (D), and Gate (G), arranged left-to-right when viewed from the front (label side) with tab facing down.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP110N10F7 and IXTH50N10L2, IRF3710ZGPBF offers optimal balance of cost, through-hole manufacturability, and proven reliability in legacy industrial power designs-especially where TO-220AB mechanical retention and serviceability are prioritized over ultimate R_DS(on) or current density.

Availability

IRF3710ZGPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for IRF3710ZGPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This device belongs to Infineon's legacy HEXFET® Power MOSFET product line, originally developed by International Rectifier and optimized for high-reliability, medium-power switching applications in industrial, telecom, and consumer power systems.

FAQ

Is IRF3710ZGPBF suitable for logic-level gate drive?

No-IRF3710ZGPBF is not a logic-level MOSFET. Its V_GS(th) ranges from 2.0 V to 4.0 V, but full enhancement requires V_GS ≥ 10 V to achieve rated R_DS(on) of 18 mΩ. Driving it with 3.3 V or 5 V microcontroller outputs results in significantly higher on-resistance (>100 mΩ) and excessive heating. A dedicated gate driver (e.g., TC4427) or level-shifting circuit is required for reliable operation.

What is the maximum allowable case temperature for continuous operation?

The maximum continuous case temperature is 100°C, beyond which the continuous drain current rating drops from 59 A to 42 A. At T_C = 100°C, power dissipation must remain below 110 W to avoid exceeding the 175°C junction limit, assuming R_θJC = 0.92°C/W. Derating curves in Figure 9 of the datasheet confirm linear reduction to zero current at T_C = 175°C.

Can IRF3710ZGPBF replace IRF3710PbF?

Yes-IRF3710ZGPBF is the lead-free, halogen-free successor to IRF3710PbF, sharing identical electrical specifications, pinout, and TO-220AB package dimensions. The "Z" suffix denotes compliance with RoHS Directive 2011/65/EU and JEDEC J-STD-020 MSL-1 rating. No layout or thermal redesign is needed for drop-in replacement in existing assemblies.

Does the body diode support synchronous rectification?

No-the integrated body diode is not optimized for synchronous rectification. Its V_SD = 1.3 V and Q_rr = 100–160 nC result in higher conduction and switching losses compared to discrete Schottky or MOSFET-based synchronous rectifiers. It functions reliably for freewheeling and protection, but efficiency-critical synchronous designs require external low-V_F diodes or dedicated SR controllers.