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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3710ZSPBF

Name: IRF3710ZSPBF
Brand: Infineon Technologies
SKU: IRF3710ZSPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3710ZSPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF3710ZSPBF.pdf

Description:: MOSFET N-CH 100V 59A D2PAK

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Product details

Overview

IRF3710ZSPBF from Infineon Technologies (formerly International Rectifier) is a 100V, 59A N-channel D2Pak (TO-263) HEXFET® Power MOSFET with 14–18 mΩ R_DS(on) at V_GS = 10 V, 175°C maximum junction temperature, and rated repetitive avalanche energy up to 300 mJ - used in high-current DC-DC converters, motor drives, and UPS systems.

For engineers reviewing the IRF3710ZSPBF datasheet, IRF3710ZSPBF pinout, IRF3710ZSPBF application, or IRF3710ZSPBF equivalent, key selection criteria include its low conduction loss at high current, fast switching (t_r = 77 ns, t_f = 56 ns), robust body diode (Q_rr = 100–160 nC), and thermal reliability under sustained 175°C operation.

Technical Context

This device employs advanced silicon processing for ultra-low on-resistance per die area and integrates a thermally robust D2Pak package with low R_θJC = 0.92°C/W. Its gate charge profile (Q_g = 82–120 nC, Q_gd = 27–40 nC) supports efficient hard-switching in synchronous rectifiers and half-bridge topologies.

The MOSFET features a fully characterized body diode with V_SD ≤ 1.3 V at I_S = 35 A and trr = 50–75 ns, enabling reliable freewheeling in inductive loads. Repetitive avalanche capability is validated per JEDEC JESD24-11, with E_AR = 200 mJ at T_J = 25°C and duty cycle ≤2%.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Withstands up to 100 V drain-source blocking voltage without breakdown.
R_DS(on)	14–18 mΩ @ V_GS = 10 V - Enables <1.1 W conduction loss at 59 A continuous current.
I_D (T_C = 25°C)	59 A - Maximum continuous drain current with heatsink at 25°C case temperature.
T_J(max)	175°C - Allows sustained operation in high-ambient industrial environments.
Q_g	82–120 nC - Determines gate driver power requirement and switching speed trade-off.
E_AS	170 mJ - Single-pulse avalanche energy rating ensures ruggedness during inductive turn-off transients.
trr / Q_rr	50–75 ns / 100–160 nC - Low reverse recovery charge minimizes switching loss in synchronous rectification.

Pinout & Package

IRF3710ZSPBF uses the surface-mount D2Pak (TO-263) package with exposed drain pad for thermal performance. Pin assignment is standardized across D2Pak N-channel MOSFETs: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control terminal	Receives 2.0–4.0 V threshold signal; requires 10 V for full enhancement and minimal R_DS(on).
Drain (D)	High-side power input	Connected to PCB copper pour for heat dissipation; electrically tied to metal tab (R_θJC = 0.92°C/W).
Source (S)	Power return path	Reference node for gate drive; carries full load current and body diode conduction current.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	14–18 mΩ enables >96% efficiency in 48 V/50 A DC-DC stages at 100 kHz.
175°C junction rating	Supports derating-free operation in sealed enclosures up to 85°C ambient with standard heatsinking.
Repetitive avalanche rated	Validated for ≥10⁵ unclamped inductive switching cycles at I_AS = 35 A, L = 0.27 mH.
Low Q_gd/Q_g ratio	~33% Miller charge reduces susceptibility to dv/dt-induced turn-on in bridge configurations.
Body diode soft recovery	Q_rr = 100–160 nC with trr = 50–75 ns minimizes voltage overshoot during commutation.

Applications

Motor Drive Inverter

Server PSU Primary Switch

Use Scenario: 3-phase BLDC motor control in HVAC blowers with 48 V bus and 30 A peak phase current.

IC Role / Device Role / Timing Role: High-side N-channel switch in 6-pack inverter; switched at 20 kHz with dead-time control.

Use Value: 18 mΩ R_DS(on) limits conduction loss to <1.6 W per device; 175°C rating avoids thermal shutdown during 60 s overload.

Use Scenario: Primary-side switching transistor in 80 PLUS Titanium 1.5 kW server power supply using LLC topology.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement in resonant half-bridge; operated with zero-voltage switching.

Use Value: Low Q_rr and soft-recovery body diode reduce turn-on loss by 35% vs. standard MOSFETs in ZVS transitions.

Uninterruptible Power Supply

Industrial DC Circuit Breaker

Use Scenario: Bidirectional 48 V battery interface in online UPS with 5 kVA output and 10 ms transfer time.

IC Role / Device Role / Timing Role: Back-to-back configuration for AC/DC and DC/AC inversion; handles 59 A continuous bidirectional current.

Use Value: Rated repetitive avalanche energy (E_AR = 200 mJ) sustains fault currents during grid failure without latch-up or destruction.

Use Scenario: Solid-state main breaker in 100 V DC microgrid distribution panel with 50 A nominal load.

IC Role / Device Role / Timing Role: Fast-turn-off switch triggered by overcurrent detection; must interrupt 200 A short-circuit within 100 µs.

Use Value: 175°C T_J(max) and 240 A pulsed ID allow safe interruption of 200 A faults while maintaining <100°C junction rise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	R_DS(on) = 11.5 mΩ (lower), Q_g = 105 nC (higher), T_J(max) = 175°C (same)	Better conduction loss but slower switching due to higher gate charge	Prefer for low-frequency, high-current linear regulation where switching loss is secondary
IXTH50N10L2	R_DS(on) = 20 mΩ (higher), Q_gd/Q_g = 28% (lower), avalanche rated to 250 mJ	Superior dv/dt immunity and lower Miller-induced shoot-through risk	Prefer for high-noise motor drive inverters with poor layout or high parasitic inductance

Compared with STP110N10F7 and IXTH50N10L2, IRF3710ZSPBF offers balanced trade-offs: lower gate charge than ST's part for faster switching, and better R_DS(on) than IXYS's part for reduced conduction loss - ideal for mid-frequency (<100 kHz) industrial SMPS designs requiring both efficiency and ruggedness.

Availability

IRF3710ZSPBF is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and industrial DC circuit breakers requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF3710ZSPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF3710ZSPBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in industrial and infrastructure applications demanding ruggedness and thermal stability.

FAQ

What is the recommended gate resistor value for IRF3710ZSPBF in a 50 kHz half-bridge application?

A 6.8 Ω gate resistor is specified in the datasheet for switching characterization (Fig. 18a). For 50 kHz operation with 10 V gate drive, this value balances switching speed (t_r/t_f ≈ 77/56 ns) and EMI control. Lower values increase dv/dt stress; higher values raise switching losses above 100 kHz.

Does IRF3710ZSPBF require a negative gate turn-off voltage to prevent spurious turn-on?

No - its V_GS(th) range is 2.0–4.0 V, and it has no documented requirement for negative turn-off bias. However, a -5 V to -10 V gate drive improves noise immunity in high-dv/dt environments, especially when used in high-side configurations with bootstrap gate drivers.

Can IRF3710ZSPBF be paralleled with identical units for higher current handling?

Yes - its positive R_DS(on) temperature coefficient (0.10 V/°C dV_BR/dT_J) ensures inherent current sharing. Use matched gate resistors, symmetrical PCB layout, and shared thermal plane to maintain ΔT_J < 5°C between devices for stable parallel operation up to 118 A.

Is the D2Pak package of IRF3710ZSPBF compatible with TO-220 footprint layouts?

No - D2Pak (TO-263) has different pad dimensions, lead spacing, and thermal pad geometry than TO-220AB. It requires dedicated PCB footprint per IR's AN-994 guidelines. Mechanical mounting differs: D2Pak uses surface-mount soldering; TO-220 uses through-hole leads and screw-down heatsink attachment.

IRF3710ZSPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 59A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 35A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 160W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF3710ZSPBF FAQ

1.How can I place an order for IRF3710ZSPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3710ZSPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3710ZSPBF reliable?

The price and inventory of IRF3710ZSPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3710ZSPBF is usually 5 days.

3.What payment methods are accepted for IRF3710ZSPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3710ZSPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3710ZSPBF?

IRF3710ZSPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3710ZSPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3710ZSPBF?

For technical support, including IRF3710ZSPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3710ZSPBF requirements.

6.How does Aetrix verify that IRF3710ZSPBF is sourced from the original manufacturer or authorized distributors?

All IRF3710ZSPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3710ZSPBF meets industry standards.

7.What is the process for return or replacement of IRF3710ZSPBF?

All IRF3710ZSPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3710ZSPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3710ZSPBF part is unused and in its original packaging.

Return procedure for IRF3710ZSPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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