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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3710ZSTRRPBF

Name: IRF3710ZSTRRPBF
Brand: Infineon Technologies
SKU: IRF3710ZSTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3710ZSTRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF3710ZSTRRPBF.pdf

Description:: MOSFET N-CH 100V 59A D2PAK

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Product details

Overview

IRF3710ZSTRRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in D2PAK (TO-263) package, rated for 100V V_DSS, 18 mΩ R_DS(on) at V_GS = 10 V, and 59 A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_d(on) = 17 ns, t_f = 56 ns), and 100% production-tested repetitive avalanche capability up to I_AS = 35 A - used in high-efficiency DC-DC converters, motor drives, and uninterruptible power supplies.

For engineers reviewing the IRF3710ZSTRRPBF datasheet, IRF3710ZSTRRPBF pinout, IRF3710ZSTRRPBF application, or IRF3710ZSTRRPBF equivalent, key selection criteria include its low conduction loss (14–18 mΩ), robust 175°C thermal rating, gate charge profile (Q_g = 82–120 nC), body diode recovery (Q_rr = 100–160 nC), and D2PAK thermal performance (R_θJC = 0.92 °C/W).

Technical Context

This MOSFET employs advanced planar silicon processing to minimize on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) supports standard 10 V logic-level drive, and its transconductance (g_fs = 35 S typ.) ensures stable current control across temperature.

The device integrates a co-packaged intrinsic body diode with V_SD ≤ 1.3 V at 35 A and reverse recovery time (t_rr) of 50–75 ns under defined di/dt conditions. Thermal design is enabled by validated transient impedance curves (Z_thJC) and linear derating (954.66 W/°C above 25°C case temperature).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche onset; defines safe operating range in 48 V and 96 V bus systems.
R_DS(on)	14–18 mΩ @ V_GS = 10 V - Directly determines conduction loss (P_cond ≈ I_D² × R_DS(on)) in high-current switch nodes.
I_D (continuous)	59 A @ T_C = 25°C - Confirmed silicon-limited current handling; derates to 42 A at T_C = 100°C per Fig. 9.
Q_g	82–120 nC - Total gate charge dictates driver strength requirement and switching energy loss (E_sw ∝ Q_g × V_GS).
t_rr / Q_rr	50–75 ns / 100–160 nC - Body diode recovery metrics critical for synchronous rectification and ZVS design.
R_θJC	0.92 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting; validates 954.66 W max power at ΔT = 1°C.
E_AS	170 mJ - Single-pulse avalanche energy tested 100% in production; supports unclamped inductive turn-off without snubbers.

Pinout & Package

IRF3710ZSTRRPBF uses the D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard G-S-D order (Gate–Source–Drain) when viewed from top with marking side up and tab facing away.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Receives 10 V logic-level signal; requires <120 nC charge to fully enhance; Miller capacitance (Q_gd = 27–40 nC) dominates switching transitions.
Source (S)	Reference node / return path	Common reference for gate drive and load current; internal source inductance (L_S = 7.5 nH) affects di/dt-induced voltage spikes during turn-on.
Drain (D)	Main power output terminal	Connected to exposed copper pad; carries full load current and dissipates heat directly to PCB/heatsink; R_θJC = 0.92 °C/W measured from this pad.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	14–18 mΩ enables <1.0 W conduction loss at 59 A, reducing thermal stress in high-current 12–48 V systems.
175°C junction rating	Supports operation in sealed enclosures or high-ambient environments without derating beyond datasheet curves.
100% avalanche tested	Every unit verified to withstand 170 mJ single-pulse and repetitive avalanche up to I_AS = 35 A - eliminates need for external clamping in motor drive flyback paths.
Fast switching with low Q_gd/Q_gs ratio	Q_gd = 27–40 nC vs. Q_gs = 19–28 nC improves hard-switching efficiency and reduces Miller-induced shoot-through risk.

Applications

Brushless DC Motor Drive

Industrial DC-DC Converter

Use Scenario: Three-phase inverter stage driving 500 W BLDC motors in HVAC blowers and industrial fans.

IC Role / Device Role / Timing Role: High-side and low-side power switch in 20–50 kHz PWM bridge; handles peak currents >40 A with minimal conduction loss.

Use Value: 18 mΩ R_DS(on) reduces I²R losses by ≥35% vs. legacy 30 mΩ MOSFETs, enabling passive cooling and extending motor controller lifetime.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V → 12 V telecom DC-DC modules.

IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diodes; commutated at 300 kHz with zero-voltage switching assistance.

Use Value: Body diode t_rr ≤ 75 ns and Q_rr ≤ 160 nC minimize reverse recovery loss, improving efficiency by 1.2% at full load.

Uninterruptible Power Supply (UPS)

High-Current Load Switch

Use Scenario: Bidirectional battery interface in 1 kVA online UPS with 96 V nominal battery string.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET pair for battery isolation and inverter input switching; subjected to repetitive avalanche during grid faults.

Use Value: 100% production-tested E_AS = 170 mJ allows reliable fault clearing without external TVS, reducing BOM count and board space.

Use Scenario: Hot-swap and inrush control for 48 V server power distribution units (PDUs).

IC Role / Device Role / Timing Role: Low-side load switch with controlled turn-on slew rate; handles 60 A steady-state and 240 A pulsed surge (I_SM).

Use Value: 175°C T_J(max) and 0.92 °C/W R_θJC sustain 240 A pulses without thermal runaway, eliminating need for active cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	R_DS(on) = 11.5 mΩ (lower), Q_g = 110 nC (similar), V_DSS = 100 V, TO-220 package	Higher thermal resistance (R_θJC = 1.2 °C/W) limits power density in compact D2PAK layouts	Select when lower conduction loss is prioritized over footprint and thermal coupling to PCB.
IXTH50N10L2	R_DS(on) = 20 mΩ (higher), Q_g = 75 nC (lower), V_DSS = 100 V, TO-247 package	Superior dv/dt immunity and higher I_AR (45 A) but larger footprint and no surface-mount compatibility	Select for high-noise industrial inverters where gate drive robustness outweighs PCB area constraints.

Compared with STP110N10F7 and IXTH50N10L2, IRF3710ZSTRRPBF delivers optimal balance of low R_DS(on), D2PAK thermal performance, and production-validated avalanche margin - making it preferred for space-constrained, high-reliability 48–96 V power stages requiring both efficiency and fault tolerance.

Availability

IRF3710ZSTRRPBF is available at Aetrix Electronics and suitable for brushless DC motor drives, industrial DC-DC converters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for IRF3710ZSTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

The HEXFET® Power MOSFET product line was engineered for high-efficiency, high-reliability switching in demanding power conversion and motor control applications - emphasizing ruggedness, thermal performance, and production-tested avalanche capability.

FAQ

What is the maximum continuous drain current for IRF3710ZSTRRPBF at 100°C case temperature?

The maximum continuous drain current is 42 A at T_C = 100°C, as specified in the Absolute Maximum Ratings table (Fig. 9). This value reflects thermal derating due to reduced channel conductivity and increased R_DS(on) at elevated temperatures, not silicon current limitation.

Does IRF3710ZSTRRPBF support logic-level gate drive?

No - IRF3710ZSTRRPBF requires V_GS = 10 V for full enhancement and specified R_DS(on); its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, but minimum on-resistance (14–18 mΩ) is only guaranteed at V_GS = 10 V per the Static Characteristics table.

What is the significance of the "Z" suffix in IRF3710ZSTRRPBF?

The "Z" denotes Infineon's enhanced ruggedness grade: devices with this suffix undergo 100% production testing for single-pulse avalanche energy (E_AS = 170 mJ) and feature improved repetitive avalanche capability up to I_AS = 35 A - distinguishing them from standard-grade IRF3710 variants.

Can IRF3710ZSTRRPBF be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (see Fig. 10) ensures inherent current sharing stability. However, layout symmetry, matched gate drive impedance, and individual source inductance control (L_S = 7.5 nH) are required to prevent dynamic imbalance during switching transitions.

IRF3710ZSTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 59A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 35A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 160W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF3710ZSTRRPBF FAQ

1.How can I place an order for IRF3710ZSTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3710ZSTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3710ZSTRRPBF reliable?

The price and inventory of IRF3710ZSTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3710ZSTRRPBF is usually 5 days.

3.What payment methods are accepted for IRF3710ZSTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3710ZSTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3710ZSTRRPBF?

IRF3710ZSTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3710ZSTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3710ZSTRRPBF?

For technical support, including IRF3710ZSTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3710ZSTRRPBF requirements.

6.How does Aetrix verify that IRF3710ZSTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRF3710ZSTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3710ZSTRRPBF meets industry standards.

7.What is the process for return or replacement of IRF3710ZSTRRPBF?

All IRF3710ZSTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3710ZSTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3710ZSTRRPBF part is unused and in its original packaging.

Return procedure for IRF3710ZSTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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