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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3711

Name: IRF3711
Brand: Infineon Technologies
SKU: IRF3711
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3711

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF3711.pdf

Description:: MOSFET N-CH 20V 110A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF3711 from Infineon Technologies is a 20 V, 110 A N-channel HEXFET Power MOSFET in TO-220AB package, optimized as a synchronous rectifier FET in high-frequency DC-DC converters. It features 6.0 mΩ R_DS(on) at V_GS = 10 V, ultra-low gate charge (Q_g = 29–44 nC), and fully characterized avalanche capability (E_AS = 460 mJ). Used in telecom server power supplies and isolated buck converters.

For engineers reviewing the IRF3711 datasheet, IRF3711 pinout, IRF3711 application, or IRF3711 equivalent, key selection criteria include R_DS(on) at 4.5 V (≤8.5 mΩ), capacitive-induced turn-on immunity, reverse recovery performance (Q_rr = 61–98 nC), and thermal resistance (R_θJC = 1.04 °C/W).

Technical Context

The IRF3711 employs planar vertical DMOS structure with optimized cell pitch for low on-resistance and fast switching. Its gate threshold voltage (V_GS(th) = 1.0–3.0 V) enables robust 4.5 V logic-level drive, while low Crss (280 pF) and Ciss (2980 pF) support MHz-range operation in synchronous buck topologies.

It integrates a low-V_SD body diode (0.82–0.88 V at 30 A) with controlled reverse recovery (t_rr = 48–75 ns, Q_rr = 61–98 nC), critical for minimizing shoot-through loss in synchronous rectification. Avalanche-rated to 30 A I_AR and 460 mJ E_AS, it withstands unclamped inductive switching stress without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage for low-voltage synchronous rectification in ≤12 V output rails.
R_DS(on) @ V_GS = 10 V	6.0 mΩ max - Enables <1 W conduction loss at 110 A, critical for high-current server VRMs.
Q_g	29–44 nC - Low total gate charge reduces driver power and enables efficient 500 kHz–1 MHz switching.
t_rr / Q_rr	48–75 ns / 61–98 nC - Fast, predictable body diode recovery minimizes cross-conduction loss in sync-buck phase nodes.
R_θJC	1.04 °C/W - Enables direct heatsink mounting for >100 W continuous dissipation with manageable junction rise.
E_AS	460 mJ - Rated single-pulse avalanche energy supports reliable operation under transient overcurrent or inductive turn-off stress.
V_GS(th)	1.0–3.0 V - Ensures clean turn-on with standard 3.3 V/5 V logic drivers and immunity to noise-induced false triggering.

Pinout & Package

IRF3711 is housed in a TO-220AB package with isolated tab (drain-connected), rated for 120 W at T_C = 25°C and featuring industry-standard mechanical footprint per JEDEC outline.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control electrode	High-impedance input requiring <44 nC charge for full enhancement; sensitive to ESD (±20 V rating).
2 - Drain	Main current sink	Internally connected to metal tab; electrically tied to heatsink - requires isolation if heatsink is grounded.
3 - Source	Current return path	Reference node for gate drive; carries full load current and body diode reverse recovery current.
4 - Drain	Secondary drain connection	Redundant drain terminal for lower inductance and improved current sharing in high-di/dt applications.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	≤8.5 mΩ - Enables direct compatibility with 5 V and 3.3 V PWM controllers without level-shifting.
Capacitive-induced turn-on immunity	Validated via dV/dt stress testing - prevents false turn-on during high dv/dt switching transitions in half-bridge nodes.
Fully characterized avalanche	Rated for 30 A I_AR and 460 mJ E_AS - eliminates need for external clamping in synchronous rectifier applications with leakage inductance.
Low gate-to-drain charge (Q_gd)	8.9 nC - Reduces Miller effect, enabling stable high-speed switching with minimal gate oscillation.
Optimized body diode	V_SD = 0.82–0.88 V @ 30 A - Minimizes forward conduction loss during dead-time conduction in synchronous rectification.

Applications

Telecom DC-DC Converters

Server VRM Synchronous Rectifiers

Use Scenario: Isolated 48 V–12 V intermediate bus converter in telecom base station power systems.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier FET replacing Schottky diodes to reduce conduction loss and improve efficiency above 90%.

Use Value: 6.0 mΩ R_DS(on) cuts rectifier loss by >65% vs. 40 V Schottky, directly enabling higher power density and lower thermal design cost.

Use Scenario: Multiphase buck converter delivering 100+ A at ≤1.2 V to CPU/GPU in cloud server motherboards.

IC Role / Device Role / Timing Role: Low-side synchronous FET operating at 500 kHz–1 MHz with precise gate timing control.

Use Value: 44 nC Q_g and 280 pF Crss allow clean, low-loss switching with standard integrated drivers, reducing gate drive losses by ~40% vs. older 100 V MOSFETs.

Industrial SMPS

Point-of-Load Regulators

Use Scenario: High-efficiency 24 V input industrial SMPS powering PLC I/O modules and sensors.

IC Role / Device Role / Timing Role: Primary-side switch in non-isolated buck or boost stage, or secondary-side rectifier in flyback outputs.

Use Value: 120 W P_D rating and 1.04 °C/W R_θJC enable compact heatsinking, supporting fanless operation in sealed enclosures.

Use Scenario: Compact 5 V–1.8 V point-of-load regulator on FPGA or ASIC carrier boards.

IC Role / Device Role / Timing Role: High-current, low-V_DS output FET in integrated power stage or discrete POL module.

Use Value: 110 A continuous rating and 4.5 V logic compatibility allow single-FET solutions for 30–50 A loads, simplifying layout and reducing BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF3710	40 V V_DS, 105 A I_D, 8.0 mΩ R_DS(on) @ 10 V	Higher voltage margin but higher conduction loss; less suitable for ≤12 V output rails where 20 V rating suffices.	Select when system requires >25 V transient tolerance or legacy board reuse with 40 V design margin.
SiR872DP	25 V V_DS, 100 A I_D, 4.0 mΩ R_DS(on) @ 10 V, PowerPAK SO-8 package	Lower R_DS(on) and surface-mount form factor; lacks TO-220 thermal mass and avalanche rating (E_AS not specified).	Select for space-constrained PCBs needing superior R_DS(on), accepting trade-off in ruggedness and thermal handling.

Compared with IRF3710, IRF3711 offers 25% lower R_DS(on) and better 4.5 V drive capability; versus SiR872DP, it provides proven avalanche robustness and higher thermal capacity in through-hole mounting - critical for industrial and telecom reliability requirements.

Availability

IRF3711 is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and industrial SMPS requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for IRF3711 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRF3711 belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-current synchronous rectification and primary-side switching in low-voltage, high-frequency power conversion systems.

FAQ

Is IRF3711 suitable for 3.3 V gate drive?

Yes - its gate threshold voltage range (1.0–3.0 V) and guaranteed R_DS(on) ≤8.5 mΩ at V_GS = 4.5 V make it compatible with 3.3 V logic drivers when used with appropriate gate resistors and layout to ensure full enhancement. However, peak performance (6.0 mΩ) requires ≥10 V drive.

What is the maximum continuous drain current at 100°C case temperature?

The datasheet specifies 69 A continuous drain current at T_C = 100°C and V_GS = 10 V. This derating reflects thermal limits of the TO-220AB package and must be validated against actual heatsink conditions and ambient airflow in the target application.

Does IRF3711 have avalanche capability, and is it tested per JEDEC JESD24-1?

Yes - IRF3711 is fully characterized for unclamped inductive switching with rated I_AR = 30 A and E_AS = 460 mJ. Test conditions and waveforms (Fig. 12a–c) align with JEDEC JESD24-1 methodology, and the device is qualified for repetitive avalanche in production lots.

Can IRF3711 replace IRF3711PbF, IRF3711SPbF, or IRF3711LPbF in existing designs?

Yes - all three suffixes denote lead-free variants (PbF) in different packages: TO-220AB (IRF3711PbF), D2Pak (IRF3711SPbF), and TO-262 (IRF3711LPbF). The electrical specifications, thermal parameters, and silicon die are identical; only mechanical form factor and thermal interface differ.

IRF3711 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 110A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2980 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 120W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF3711 FAQ

1.How can I place an order for IRF3711 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3711 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3711 reliable?

The price and inventory of IRF3711 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3711 is usually 5 days.

3.What payment methods are accepted for IRF3711?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3711 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3711?

IRF3711 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3711 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3711?

For technical support, including IRF3711 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3711 requirements.

6.How does Aetrix verify that IRF3711 is sourced from the original manufacturer or authorized distributors?

All IRF3711 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3711 meets industry standards.

7.What is the process for return or replacement of IRF3711?

All IRF3711 units undergo pre-shipment inspection (PSI). If there is an issue with IRF3711, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3711 part is unused and in its original packaging.

Return procedure for IRF3711:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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