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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3711L

Name: IRF3711L
Brand: Infineon Technologies
SKU: IRF3711L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3711L

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF3711L.pdf

Description:: MOSFET N-CH 20V 110A TO262

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF3711L from Infineon Technologies is a 20 V, 110 A N-channel enhancement-mode HEXFET Power MOSFET in TO-262 (ISOTOP) package, optimized as a synchronous rectifier FET in high-frequency DC-DC converters for telecom and server power supplies. It features 6.0 mΩ R_DS(on) at V_GS = 10 V, 4.5 V gate drive capability, and fully characterized avalanche performance up to 460 mJ.

For engineers reviewing the IRF3711L datasheet, IRF3711L pinout, IRF3711L application, or IRF3711L equivalent, key selection criteria include low R_DS(on) at 4.5 V, pulsed drain current rating of 440 A, thermal resistance R_θJC = 1.04 °C/W, and body diode reverse recovery charge Q_rr = 61–92 nC under standard test conditions.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-assisted source metallization to achieve ultra-low on-resistance and fast switching. Its gate charge profile (Q_g = 29–44 nC, Q_gd = 8.9 nC) supports efficient operation in synchronous buck topologies above 300 kHz.

The device integrates a robust body diode with V_SD = 0.82–0.88 V at I_S = 30 A and t_rr = 48–75 ns, enabling reliable capacitive-induced turn-on immunity and reduced cross-conduction loss in hard-switched synchronous rectification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 12 V input rails and transient margin in telecom/server point-of-load converters
R_DS(on) max	6.0 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 110 A continuous drain current
I_D @ T_C = 25°C	110 A - Supports high-current output stages without paralleling in single-phase 50–100 A VRMs
E_AS	460 mJ - Withstands unclamped inductive energy during startup/fault in synchronous buck converters
Q_rr	61–92 nC - Low reverse recovery charge minimizes diode conduction loss and EMI in high-dV/dt environments
R_θJC	1.04 °C/W - Enables direct heatsink mounting for thermal management in compact 1U server power supplies
t_r/t_f	220 ns / 12 ns - Fast switching transitions reduce overlap loss while maintaining gate drive simplicity

Pinout & Package

IRF3711L is housed in a TO-262 (ISOTOP) package with isolated metal tab for direct heatsink mounting and four leads: Gate (Pin 1), Drain (Pin 2), Source (Pin 3), and Drain (Pin 4). The dual-drain configuration improves current sharing and reduces package inductance in high-di/dt applications.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control electrode	Receives 4.5–10 V logic-level gate drive; low input capacitance (C_iss = 2980 pF) enables fast turn-on with minimal driver stress
2 - Drain	Main current path anode	Connected to input rail or transformer secondary; electrically tied to metal tab for low-inductance power delivery
3 - Source	Main current path cathode / reference node	Serves as switch node return and gate drive reference; low parasitic inductance critical for synchronous rectifier stability
4 - Drain	Secondary current path anode	Parallel drain connection reduces effective package resistance and improves thermal coupling to heatsink

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	8.5 mΩ - Enables full-rated conduction with 5 V microcontroller or PWM controller gate drive
Fully characterized avalanche	460 mJ single-pulse rating - Eliminates need for external snubbers in inductive load switching
Capacitive-induced turn-on immunity	Validated via dV/dt testing - Prevents false triggering during high-slew-rate node transitions in synchronous rectifiers
Low gate-to-drain charge	Q_gd = 8.9 nC - Reduces Miller effect and improves controllability during hard switching

Applications

Telecom DC-DC Converters

Server VRM Synchronous Rectification

Use Scenario: 48 V to 12 V isolated forward converter in telecom shelf power modules.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diodes to improve efficiency at 200–500 kHz switching frequency.

Use Value: Achieves >95% conversion efficiency by reducing conduction loss versus 40 V Schottky, enabled by 6.0 mΩ R_DS(on) and low Q_rr.

Use Scenario: Multiphase buck converter supplying core voltage to Intel Xeon processors.

IC Role / Device Role / Timing Role: High-current low-side synchronous FET operating in continuous conduction mode with 300–600 kHz PWM.

Use Value: Delivers 110 A continuous current per phase with <1.2 W total losses (conduction + switching), supporting dense 1U server form factors.

Industrial Motor Drive Half-Bridge

High-Frequency Buck Converter

Use Scenario: 24 V BLDC motor inverter stage requiring robust short-circuit tolerance.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge topology handling peak currents up to 440 A during stall conditions.

Use Value: Survives repeated unclamped inductive switching events (E_AS = 460 mJ) without degradation, eliminating need for external protection circuits.

Use Scenario: 12 V to 1.2 V point-of-load converter for FPGA or ASIC power domains.

IC Role / Device Role / Timing Role: High-side synchronous FET with gate drive referenced to switching node.

Use Value: Low C_oss (1770 pF) and Crss (280 pF) minimize shoot-through risk and enable clean dead-time control at >1 MHz operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF3710ZPbF	20 V, 120 A, R_DS(on) = 5.3 mΩ @ 10 V, TO-220AB package	Lacks dual-drain configuration and has higher R_θJA (62 °C/W); unsuitable for direct heatsink mounting	Preferred where board space allows TO-220 and lower R_DS(on) outweighs thermal packaging constraints
SiR872DP-T1-GE3	20 V, 100 A, R_DS(on) = 5.8 mΩ @ 4.5 V, PowerPAK SO-8 package	Surface-mount only; no isolated tab; limited to <30 A continuous due to thermal limits	Selected for compact, low-profile designs where PCB copper area replaces heatsink and gate drive is 4.5 V only

Compared with IRF3711L, IRF3710ZPbF offers marginally lower on-resistance but lacks the TO-262's dual-drain thermal path and heatsink interface, while SiR872DP-T1-GE3 provides superior 4.5 V drive performance in SMT format but cannot sustain 110 A continuously without forced cooling.

Availability

IRF3711L is available at Aetrix Electronics and suitable for telecom power systems, server VRMs, industrial motor drives, and high-frequency buck converters requiring stable component supply and long-term lifecycle support.

Supply support for IRF3711L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRF3711L belongs to the HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-current synchronous rectification and switching in telecom and computing power supplies.

FAQ

What is the maximum continuous drain current for IRF3711L at 100°C case temperature?

The IRF3711L supports 69 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-262 package and ensures safe operation within its 120 W P_D limit at 25°C case temperature.

Does IRF3711L have a built-in body diode, and what are its key characteristics?

Yes, IRF3711L integrates a monolithic p-n junction body diode with forward voltage V_SD = 0.82–0.88 V at I_S = 30 A and T_J = 25–125°C. Its reverse recovery time t_rr is 48–75 ns and Q_rr is 61–98 nC, enabling use in synchronous rectification without external diodes.

Can IRF3711L be driven directly by a 3.3 V microcontroller GPIO?

No - the gate threshold voltage V_GS(th) ranges from 1.0 to 3.0 V, but R_DS(on) rises sharply below 4.5 V (6.2–8.5 mΩ). Reliable switching requires ≥4.5 V gate drive; a level-shifting gate driver is necessary for 3.3 V logic interfaces.

What is the thermal resistance from junction to case (R_θJC) for IRF3711L?

The junction-to-case thermal resistance R_θJC is 1.04 °C/W, measured under standard test conditions with flat, greased heatsink contact. This value is critical for calculating maximum allowable power dissipation when mounted to a heatsink with known thermal interface resistance.

IRF3711L Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 110A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2980 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 120W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRF3711L FAQ

1.How can I place an order for IRF3711L through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3711L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3711L reliable?

The price and inventory of IRF3711L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3711L is usually 5 days.

3.What payment methods are accepted for IRF3711L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3711L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3711L?

IRF3711L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3711L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3711L?

For technical support, including IRF3711L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3711L requirements.

6.How does Aetrix verify that IRF3711L is sourced from the original manufacturer or authorized distributors?

All IRF3711L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3711L meets industry standards.

7.What is the process for return or replacement of IRF3711L?

All IRF3711L units undergo pre-shipment inspection (PSI). If there is an issue with IRF3711L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3711L part is unused and in its original packaging.

Return procedure for IRF3711L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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