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Infineon Technologies IRF3711LPBF
- Part No.:
- IRF3711LPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRF3711LPBF.pdf
- Description:
- MOSFET N-CH 20V 110A TO262
- Quantity:
- Payment:
- Shipping:
Inventory:4,832
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Product details
Overview
IRF3711LPBF from Infineon Technologies is a 20 V, 110 A, 6.0 mΩ N-channel enhancement-mode HEXFET Power MOSFET in TO-262 (I²PAK) package, optimized as a synchronous rectifier FET in high-frequency DC-DC converters for telecom and server power supplies.
For engineers reviewing the IRF3711LPBF datasheet, IRF3711LPBF pinout, IRF3711LPBF application, or IRF3711LPBF equivalent, key selection criteria include RDS(on) at 4.5 V (≤8.5 mΩ), ultra-low gate charge (Qg = 29–44 nC), avalanche energy rating (EAS = 460 mJ), and thermal resistance RθJC = 1.04 °C/W.
Technical Context
This MOSFET employs planar silicon HEXFET architecture with fully characterized unclamped inductive switching (UIS) capability and capacitive-induced turn-on immunity-critical for synchronous buck topologies operating above 300 kHz. Its low Qgd/Qgs ratio (≈1.2) and fast trr (48–75 ns) minimize shoot-through risk and body-diode conduction loss.
The device features a robust p-n junction body diode with VSD = 0.82–0.88 V at 30 A and soft reverse recovery (Qrr = 61–98 nC), enabling efficient operation without external Schottky assist in 12 V input, 1–3 V output server VRMs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum blocking voltage compatible with 12 V bus systems and low-voltage synchronous rectification. |
| RDS(on) @ VGS = 4.5 V | 6.2–8.5 mΩ - Enables <1.5 W conduction loss at 30 A in 48 V→12 V intermediate bus converters. |
| Qg | 29–44 nC - Supports efficient gate drive with standard 1–2 A peak drivers at >500 kHz switching frequencies. |
| EAS | 460 mJ - Withstands single-pulse avalanche stress during transient overcurrent events without failure. |
| RθJC | 1.04 °C/W - Allows 110 A continuous current with ≤105 °C junction rise over case at 25 °C heatsink temperature. |
| trr | 48–75 ns - Limits reverse recovery loss and EMI generation in hard-switched synchronous rectifiers. |
| ID @ TC = 100 °C | 69 A - Specifies usable current derating for thermally constrained PCB-mount applications. |
Pinout & Package
IRF3711LPBF uses the TO-262 (I²PAK) package: isolated tab (Drain-connected), 4-pin outline with Drain double-bonded to pins 2 and 4 for reduced source inductance and improved current sharing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal; requires <44 nC charge for full enhancement; Miller plateau at ~3.5 V enables predictable dV/dt control. |
| 2 | Drain | Main high-side current path; electrically connected to metal tab for low-inductance heatsinking and thermal transfer. |
| 3 | Source | Power return node; serves as reference for gate drive and current sensing; low-inductance layout critical for stability. |
| 4 | Drain | Second Drain connection; reduces package inductance by ~30% vs. single-Drain TO-220, improving dI/dt handling. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) at 4.5 V | Enables direct 5 V gate drive in 3.3 V/1.8 V output VRMs without level-shifting, reducing BOM count. |
| Fully characterized avalanche performance | Guarantees reliable operation under unclamped inductive switching up to 30 A and 460 mJ-no external snubbers needed. |
| Capacitive-induced turn-on immunity | Prevents false triggering during high dV/dt transitions across drain-source, eliminating need for negative gate bias. |
| Optimized body diode recovery | Soft, low-Qrr reverse recovery minimizes voltage overshoot and EMI in synchronous rectifier mode. |
Applications
| Telecom DC-DC Converters | Server CPU Voltage Regulators |
|---|---|
Use Scenario: 48 V to 12 V intermediate bus converter in 19-inch rack power shelves. IC Role / Device Role / Timing Role: Synchronous rectifier FET replacing Schottky diodes to reduce conduction loss and improve efficiency above 94%. Use Value: Achieves 1.2 W lower dissipation vs. TO-220 alternative at 60 A load, enabling passive cooling in dense layouts. | Use Scenario: Multiphase 12 V input → 1.0–1.8 V output VRM supplying modern Xeon or EPYC processors. IC Role / Device Role / Timing Role: Low-side synchronous FET in interleaved buck stages operating at 500–1000 kHz. Use Value: 6.0 mΩ RDS(on) at 4.5 V allows use of 5 V gate drive ICs (e.g., ISL6612A), simplifying driver design. |
| Industrial PLC Power Modules | High-Density PoE++ Switches |
Use Scenario: 24 V input power stage for programmable logic controller I/O modules with tight thermal envelopes. IC Role / Device Role / Timing Role: Primary switching FET in non-isolated buck regulator powering FPGA and analog signal chains. Use Value: 1.04 °C/W RθJC supports 69 A continuous current at 100 °C case temperature-enabling compact heatsink design. | Use Scenario: 57 V PoE++ (IEEE 802.3bt Type 4) DC-DC stage delivering up to 90 W per port. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in active-clamp forward or LLC resonant converter. Use Value: 460 mJ EAS withstands cable surge transients without clamping diodes, improving system reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF3710ZPBF | Higher RDS(on) (7.2 mΩ @ 10 V), same TO-262 package, lower Qg (25 nC). | Better suited for lower-frequency (<300 kHz), higher-current applications where gate drive loss dominates. | Select when prioritizing gate drive efficiency over conduction loss in 20–30 V systems. |
| STP110N20F6 | Same VDS (20 V), higher RDS(on) (9.5 mΩ @ 4.5 V), lower Qrr (45 nC), TO-220FP package. | Limited to lower-current designs due to higher on-resistance and inferior thermal resistance (RθJC = 1.6 °C/W). | Choose only if TO-220 footprint compatibility is mandatory and peak current ≤50 A. |
Compared with IRF3711LPBF, IRF3710ZPBF trades conduction loss for gate drive efficiency, while STP110N20F6 sacrifices both RDS(on) and thermal performance for cost-sensitive, lower-power implementations-making IRF3711LPBF optimal for high-density, high-efficiency synchronous rectification.
Availability
IRF3711LPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server CPU voltage regulators, and industrial PLC power modules requiring stable component supply and long-term lifecycle support.
Supply support for IRF3711LPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF3711LPBF belongs to the HEXFET Power MOSFET product line, engineered specifically for high-frequency, high-efficiency synchronous rectification and primary-side switching in low-voltage, high-current power conversion systems.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The IRF3711LPBF supports 69 A continuous drain current at TC = 100 °C with VGS = 10 V, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 110 A rating at 25 °C, based on a linear derating factor of 0.96 W/°C and RθJC = 1.04 °C/W.
Does IRF3711LPBF require negative gate voltage to prevent spurious turn-on?
No. The IRF3711LPBF features built-in capacitive-induced turn-on immunity, verified by characterization under high dV/dt conditions. Its gate threshold voltage (1.0–3.0 V) and low Miller capacitance (Crss = 280 pF) ensure stable operation without negative gate bias in typical synchronous buck layouts.
Can IRF3711LPBF be used in parallel configurations?
Yes-its positive temperature coefficient of RDS(on) (evident in Fig 4) ensures inherent current sharing when paralleled. Designers must match gate drive loop inductance and use Kelvin source connections to avoid oscillation; typical applications include multi-phase VRMs where >150 A total current is required.
What is the recommended gate resistor value for 500 kHz switching?
A 1.8 Ω gate resistor is validated in the datasheet for 500 kHz operation (see td(on)/td(off) test conditions). This value balances switching speed (tr = 220 ns, tf = 12 ns) against gate drive overshoot and ringing; values below 1.2 Ω increase EMI risk, while above 3.3 Ω raises switching losses beyond 0.5 W per cycle.
IRF3711LPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 44 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2980 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 120W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262
IRF3711LPBF FAQ
1.How can I place an order for IRF3711LPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF3711LPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF3711LPBF reliable?
The price and inventory of IRF3711LPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3711LPBF is usually 5 days.
3.What payment methods are accepted for IRF3711LPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3711LPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF3711LPBF?
IRF3711LPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF3711LPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF3711LPBF?
For technical support, including IRF3711LPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3711LPBF requirements.
6.How does Aetrix verify that IRF3711LPBF is sourced from the original manufacturer or authorized distributors?
All IRF3711LPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3711LPBF meets industry standards.
7.What is the process for return or replacement of IRF3711LPBF?
All IRF3711LPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3711LPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF3711LPBF part is unused and in its original packaging.
Return procedure for IRF3711LPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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