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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3711PBF

Name: IRF3711PBF
Brand: Infineon Technologies
SKU: IRF3711PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3711PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF3711PBF.pdf

Description:: MOSFET N-CH 20V 110A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF3711PBF from Infineon Technologies is a 20 V, 110 A N-channel HEXFET Power MOSFET in TO-220AB package, optimized for synchronous buck converters and high-frequency isolated DC-DC converters. It features 6.0 mΩ R_DS(on) at V_GS = 10 V, ultra-low gate charge (Q_g = 29–44 nC), and fully characterized avalanche capability (E_AS = 460 mJ).

For engineers reviewing the IRF3711PBF datasheet, IRF3711PBF pinout, IRF3711PBF application, or IRF3711PBF equivalent, key selection criteria include R_DS(on) at 4.5 V, capacitive-induced turn-on immunity, reverse recovery performance (Q_rr = 61–98 nC), and thermal resistance (R_θJC = 1.04 °C/W) for high-power-density server and telecom power designs.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-free die design to achieve low on-resistance while maintaining robust unclamped inductive switching (UIS) performance. Its gate threshold voltage (V_GS(th) = 1.0–3.0 V) and transconductance (g_fs = 53 S) support stable operation across wide temperature ranges (–55 to +150 °C).

The device integrates a fast, low-loss body diode with t_rr = 48–75 ns and Q_rr = 61–98 nC, enabling efficient synchronous rectification without external Schottky diodes. Its C_iss/C_oss/C_rss values (2980/1770/280 pF at V_DS = 10 V) are tuned for minimal Miller effect in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Supports low-voltage input rails in server VRMs and point-of-load converters
R_DS(on) max @ V_GS = 10 V	6.0 mΩ - Enables <1 W conduction loss at 110 A continuous drain current
Q_g	29–44 nC - Reduces gate drive power and enables >1 MHz switching in synchronous buck stages
E_AS	460 mJ - Withstands single-pulse avalanche stress during transient overcurrent events
R_θJC	1.04 °C/W - Allows direct heatsink mounting for thermal management in compact 12 V/48 V systems
t_rr	48–75 ns - Minimizes body diode reverse recovery losses in high-frequency synchronous rectification
I_D @ T_C = 100°C	69 A - Specifies usable current derating for sustained operation in enclosed industrial enclosures

Pinout & Package

Package: TO-220AB, through-hole, single-ended heatsink-mountable, lead-free per RoHS.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control electrode	Low-impedance input requiring <44 nC total charge for full enhancement; sensitive to ESD
2 - Drain	Main current path (high-side or low-side)	Internally connected to metal tab; electrically tied to Pin 4 for enhanced thermal conduction
3 - Source	Reference node and return path	Common connection point for gate drive reference and load return; carries full switched current
4 - Drain (Tab)	Thermal and electrical drain terminal	Exposed metal tab provides primary heat transfer path to heatsink; must be insulated if mounted to grounded chassis

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	8.5 mΩ - Enables direct drive from 5 V microcontrollers or PWM controllers without level-shifting
Fully characterized avalanche rating	E_AS = 460 mJ - Eliminates need for external snubbers in inductive switching applications
Capacitive-induced turn-on immunity	Validated under dV/dt stress - Prevents false triggering in high-dV/dt environments like LLC resonant converters
Optimized body diode	Q_rr = 61–98 nC, t_rr = 48–75 ns - Reduces cross-conduction loss and EMI in synchronous rectifier mode

Applications

Server VRM Power Stage

Telecom 48 V Input DC-DC Converter

Use Scenario: High-current, high-efficiency step-down conversion for CPU/GPU core voltage regulation in datacenter servers.

IC Role / Device Role / Timing Role: Low-side synchronous FET in multiphase buck converter, switching at 500 kHz–1 MHz.

Use Value: 6.0 mΩ R_DS(on) and 44 nC Q_g reduce conduction and switching losses, enabling >95% efficiency at 100 A output.

Use Scenario: Primary-side synchronous rectifier in isolated forward or active-clamp forward converters for telecom base station power supplies.

IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diode, driven by transformer-coupled gate signal.

Use Value: Body diode Q_rr ≤ 98 nC and t_rr ≤ 75 ns minimize reverse recovery spikes and improve light-load efficiency.

Industrial PLC Power Module

High-Frequency Buck Converter for FPGA Core Supply

Use Scenario: Compact, fanless 24 V input-to-3.3/5 V output power module for programmable logic controller I/O modules.

IC Role / Device Role / Timing Role: High-side switch in non-isolated buck regulator operating at 300–600 kHz with integrated controller.

Use Value: R_θJC = 1.04 °C/W and 120 W P_D allow full 69 A derated current with passive heatsinking in sealed enclosures.

Use Scenario: Point-of-load regulator supplying dynamic, high-peak-current loads (e.g., Xilinx Versal ACAP) with rapid load transients.

IC Role / Device Role / Timing Role: Low-side FET in dual-phase buck stage, leveraging low Q_gd/Q_gs ratio for clean turn-on/turn-off timing.

Use Value: Q_gd = 8.9 nC and Q_gs = 7.3 nC ensure minimal Miller plateau duration, supporting tight duty-cycle control down to 1%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3713PBF	R_DS(on) = 8.0 mΩ @ 4.5 V (vs. 8.5 mΩ), Q_g = 32 nC - slightly lower on-resistance but higher gate charge	Better suited for 5 V gate drive only; less margin at 4.5 V due to tighter V_GS(th) distribution	Select when gate drive is strictly 5 V and lowest possible R_DS(on) dominates over switching loss
STP36NF20	V_DS = 200 V, R_DS(on) = 40 mΩ @ 10 V - higher voltage rating but 6.7× higher on-resistance	Designed for 100–200 V applications (e.g., motor drives); unsuitable for 20 V server VRMs due to excessive conduction loss	Avoid for low-voltage, high-current use; consider only if system requires >100 V breakdown margin

Compared with IRL3713PBF and STP36NF20, IRF3711PBF uniquely balances ultra-low R_DS(on), moderate Q_g, and validated 20 V operation-making it optimal for space-constrained, high-efficiency 12–20 V input buck converters where thermal density and avalanche ruggedness are critical.

Availability

IRF3711PBF is available at Aetrix Electronics and suitable for server VRM power stages, telecom DC-DC converters, and industrial PLC power modules requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF3711PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF3711PBF belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-frequency, high-current DC-DC conversion in computing, telecom, and industrial power systems where low R_DS(on), fast switching, and avalanche reliability are mandatory.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRF3711PBF supports 69 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 110 A rating at 25°C, based on its 0.96 W/°C linear derating factor and 120 W maximum power dissipation at T_C = 25°C.

Does IRF3711PBF have a qualified avalanche energy rating?

Yes, the IRF3711PBF is fully characterized for unclamped inductive switching with a single-pulse avalanche energy rating of 460 mJ at T_J = 25°C. This rating is validated per JEDEC standard JESD24-1 and applies to conditions where I_AS = 30 A and V_(BR)DSS = 20 V, enabling reliable operation in inductive load switching without external protection.

Can IRF3711PBF be driven directly from a 3.3 V microcontroller GPIO?

No - the gate threshold voltage range is 1.0–3.0 V, but full enhancement requires ≥4.5 V for acceptable R_DS(on) (8.5 mΩ). At 3.3 V, R_DS(on) exceeds 15 mΩ, causing excessive conduction loss. A dedicated gate driver or level shifter is required for robust 3.3 V control.

What is the thermal resistance from junction to case, and how should it be used in layout?

R_θJC is 1.04 °C/W, measured from die junction to the metal tab (Pin 4). In PCB layout, the tab must be soldered to a large copper pour or heatsink using thermally conductive interface material. Avoid insulating washers unless electrically isolated mounting is required - in which case, R_θCS = 0.50 °C/W must be added to the thermal path.

IRF3711PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 110A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2980 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 120W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF3711PBF FAQ

1.How can I place an order for IRF3711PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3711PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3711PBF reliable?

The price and inventory of IRF3711PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3711PBF is usually 5 days.

3.What payment methods are accepted for IRF3711PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3711PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3711PBF?

IRF3711PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3711PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3711PBF?

For technical support, including IRF3711PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3711PBF requirements.

6.How does Aetrix verify that IRF3711PBF is sourced from the original manufacturer or authorized distributors?

All IRF3711PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3711PBF meets industry standards.

7.What is the process for return or replacement of IRF3711PBF?

All IRF3711PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3711PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3711PBF part is unused and in its original packaging.

Return procedure for IRF3711PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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