Infineon Technologies IRF3711S

Overview

IRF3711S from Infineon Technologies is a 20 V, 110 A N-channel enhancement-mode HEXFET Power MOSFET in D2Pak (TO-263) package, optimized as a synchronous rectifier FET in high-frequency DC-DC converters. It features 6.0 mΩ R_DS(on) at V_GS = 10 V, ultra-low gate charge (Q_g = 29–44 nC), and fully characterized avalanche capability (E_AS = 460 mJ). Used in telecom and industrial isolated buck converters requiring fast switching and low conduction loss.

For engineers reviewing the IRF3711S datasheet, IRF3711S pinout, IRF3711S application, or IRF3711S equivalent, key selection criteria include its 4.5 V gate drive compatibility, 120 W T_C power dissipation, body diode reverse recovery performance (t_rr = 48–75 ns), and thermal resistance (R_θJC = 1.04 °C/W) for heatsink-integrated power stage design.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-free die layout to achieve low R_DS(on) while maintaining robust unclamped inductive switching (UIS) performance. Its gate threshold voltage (V_GS(th) = 1.0–3.0 V) enables reliable turn-on with 4.5 V logic-level drivers, and the low C_iss (2980 pF) and C_rss (280 pF) support high dV/dt immunity in synchronous rectification topologies.

The device integrates a fast, low-Q_rr body diode (Q_rr = 61–98 nC) with soft recovery characteristics, minimizing capacitive induced turn-on risk during dead-time transitions. Thermal design is supported by a well-defined junction-to-case path (R_θJC = 1.04 °C/W) and linear derating factor (0.96 W/°C) above 25 °C case temperature.

Key Specifications

Pinout & Package

IRF3711S is housed in a surface-mount D2Pak (TO-263) package with exposed drain pad for thermal and electrical connection. The package features three main terminals plus an auxiliary drain connection for improved current sharing and reduced parasitic inductance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Compared with IRF3711S, the IRL3713PbF trades voltage rating and thermal performance for lower cost and through-hole compatibility, while the STL110N10F7 offers tighter R_DS(on) and smaller footprint at the expense of higher Q_g and reduced avalanche ruggedness-making IRF3711S optimal for thermally demanding, high-reliability 20 V synchronous rectification.

Availability

IRF3711S is available at Aetrix Electronics and suitable for telecom power supplies, server VRMs, industrial motor drives, and LED driver power stages requiring stable component supply and long-term manufacturability.

Supply support for IRF3711S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRF3711S belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion in telecom, computing, and industrial applications where low R_DS(on), fast switching, and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current for IRF3711S at 100°C case temperature?

The IRF3711S supports 69 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2Pak package and must be validated with actual board-level thermal design including copper area, airflow, and heatsink interface resistance.

Does IRF3711S have a built-in body diode, and what are its key recovery parameters?

Yes, IRF3711S integrates a p-n junction body diode with typical forward voltage of 0.82–0.88 V at 30 A and 25°C. Its reverse recovery is characterized at t_rr = 48–75 ns and Q_rr = 61–98 nC under IF = 16 A, VR = 10 V, and di/dt = 100 A/µs-critical for minimizing shoot-through loss in synchronous rectifier operation.

Can IRF3711S be driven directly by a 3.3 V microcontroller GPIO pin?

No-while V_GS(th) starts at 1.0 V, the device requires ≥4.5 V to achieve rated R_DS(on) (8.5 mΩ max) and ensure robust turn-on margin. A 3.3 V GPIO lacks sufficient overdrive; a dedicated gate driver (e.g., TC4427) or level shifter is required for reliable switching at full current capability.

What is the recommended PCB layout practice for the D2Pak drain pad of IRF3711S?

The exposed drain pad (pins 2 and 4) must be soldered to a large, thermally optimized copper pour with ≥6 thermal vias (0.3 mm diameter, spaced ≤1 mm apart) connecting to internal ground or power planes. Avoid narrow traces; use ≥2 oz copper and minimize distance between FET and input/output capacitors to reduce loop inductance and ringing during switching transitions.