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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3711SPBF

Name: IRF3711SPBF
Brand: Infineon Technologies
SKU: IRF3711SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3711SPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF3711SPBF.pdf

Description:: MOSFET N-CH 20V 110A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF3711SPBF from Infineon Technologies is a 20 V, 110 A N-channel HEXFET Power MOSFET in D2Pak (TO-263) package, featuring 6.0 mΩ R_DS(on) at V_GS = 10 V and optimized for high-frequency synchronous buck converters in server CPU power delivery. It supports pulsed drain current up to 440 A and operates across –55 °C to +150 °C junction temperature range.

For engineers reviewing the IRF3711SPBF datasheet, IRF3711SPBF pinout, IRF3711SPBF application, or IRF3711SPBF equivalent, key selection criteria include low R_DS(on) at 4.5 V, avalanche energy rating (460 mJ), gate charge (29–44 nC), thermal resistance (R_θJC = 1.04 °C/W), and body diode reverse recovery performance (Q_rr = 61–98 nC).

Technical Context

This MOSFET uses planar HEXFET technology with fully characterized unclamped inductive switching (UIS) capability and capacitive-induced turn-on immunity. Its gate threshold voltage (1.0–3.0 V) and low input capacitance (C_iss = 2980 pF) support fast, stable switching in high-di/dt synchronous rectifier topologies.

The device integrates a robust body diode with V_SD = 0.82–0.88 V at 30 A and t_rr = 48–75 ns, enabling efficient freewheeling in DC-DC converters without external Schottky supplementation. Thermal design is supported by validated junction-to-case transient impedance data.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 12 V input rail systems and low-voltage point-of-load converters
R_DS(on) max	6.0 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 110 A continuous, critical for high-efficiency server VRMs
I_D cont @ T_C = 25°C	110 A - Supports high-current output stages without parallel devices in compact PCB layouts
E_AS	460 mJ - Confirmed single-pulse avalanche energy allows reliable operation under inductive fault conditions
Q_g	29–44 nC - Gate drive energy requirement directly impacts driver IC selection and switching loss trade-offs
R_θJC	1.04 °C/W - Enables direct heatsink mounting with predictable thermal rise under full load
t_rr	48–75 ns - Low reverse recovery time minimizes shoot-through risk and EMI in synchronous buck phase nodes

Pinout & Package

IRF3711SPBF is housed in a surface-mount D2Pak (TO-263) package with exposed drain pad for thermal and electrical connection. The package features 4 leads: Gate (1), Drain (2), Source (3), and Drain (4), where pins 2 and 4 are internally connected to the same drain metallization.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control terminal	Receives gate drive signal; low input capacitance (C_iss = 2980 pF) reduces driver loading
2 - Drain	Main current path (high-side or low-side)	Internally tied to pin 4; connects to PCB copper pour for thermal dissipation and low-inductance power routing
3 - Source	Reference node for gate drive and current sensing	Serves as return path for load current and provides ground reference for gate driver ICs
4 - Drain	Secondary drain connection	Parallel drain path to pin 2; improves current sharing and reduces package inductance in high-frequency switching

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	8.5 mΩ - Enables efficient operation with 5 V gate drive, supporting controller ICs without bootstrap or level-shift circuitry
Fully characterized avalanche	460 mJ E_AS, 30 A I_AR - Eliminates need for external clamping in inductive load switching applications
Capacitive-induced turn-on immunity	Validated against dV/dt-induced false triggering - ensures reliability in high dv/dt environments like LLC resonant converters
Optimized body diode	Q_rr = 61–98 nC, t_rr = 48–75 ns - Reduces switching losses and EMI during synchronous rectification transitions

Applications

Server CPU Voltage Regulator Modules (VRMs)

High-Frequency Telecom DC-DC Converters

Use Scenario: Primary low-side FET in multiphase buck converters delivering >100 A to modern x86 processors.

IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 300–1000 kHz with precise dead-time control.

Use Value: 6.0 mΩ R_DS(on) and 440 A pulsed current rating enable single-device per phase, reducing BOM count and layout area.

Use Scenario: Secondary-side synchronous rectifier in isolated forward or active-clamp forward converters for 48 V telecom systems.

IC Role / Device Role / Timing Role: High-efficiency rectifying switch replacing Schottky diodes in 200–500 kHz topologies.

Use Value: Body diode Q_rr ≤ 98 nC and V_SD ≤ 0.88 V minimize conduction and recovery losses, improving system efficiency by ≥1.2%.

Industrial Motor Drive Half-Bridge Legs

High-Power LED Driver Switches

Use Scenario: Low-side switch in 24–48 V BLDC motor inverters requiring robust short-circuit withstand.

IC Role / Device Role / Timing Role: PWM-controlled power switch handling repetitive 110 A peak currents with fast turn-off.

Use Value: 460 mJ avalanche energy and 150 °C max T_J ensure safe operation during motor stall or phase reversal faults.

Use Scenario: Constant-current switching element in high-brightness LED drivers for street lighting and signage.

IC Role / Device Role / Timing Role: High-duty-cycle PWM switch regulating 5–20 A LED strings at 100–500 kHz.

Use Value: Low R_DS(on) and linear derating factor (0.96 W/°C) maintain thermal stability under continuous conduction mode operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3713PbF	R_DS(on) = 7.0 mΩ @ 4.5 V; lower V_DS rating (15 V); TO-220AB package	Limited to ≤12 V input systems; unsuitable for 20 V bus designs	Select when gate drive is constrained to 4.5 V and board space permits through-hole mounting
STL220N3LLH6	R_DS(on) = 2.2 mΩ @ 10 V; 30 V V_DS; PowerFLAT 8x8 package; no integrated drain tab	Higher voltage margin but requires careful PCB thermal design due to non-exposed-drain footprint	Choose for higher efficiency in 24 V systems where thermal vias and copper area can be optimized

Compared with IRF3711SPBF, IRL3713PbF trades voltage headroom for enhanced 4.5 V drive compatibility, while STL220N3LLH6 offers lower on-resistance at the cost of package-level thermal management complexity and higher voltage rating than required for 20 V applications.

Availability

IRF3711SPBF is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, industrial motor drives, and high-power LED drivers requiring stable component supply and long-term production continuity.

Supply support for IRF3711SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon-based power devices and wide-bandgap technologies.

The IRF3711SPBF belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion in computing and communications infrastructure where low R_DS(on), fast switching, and ruggedness are critical.

FAQ

What is the maximum continuous drain current for IRF3711SPBF at 100°C case temperature?

The maximum continuous drain current is 69 A at T_C = 100°C with V_GS = 10 V. This value reflects thermal derating from the 110 A rating at 25°C, based on the device's 1.04 °C/W junction-to-case thermal resistance and SOA limits. Operation above this current requires forced cooling or reduced duty cycle.

Does IRF3711SPBF have a qualified avalanche rating?

Yes - IRF3711SPBF is fully characterized for unclamped inductive switching with a single-pulse avalanche energy rating of 460 mJ and an avalanche current rating of 30 A. These values are measured per JEDEC JESD24-1 and documented in the official Infineon datasheet (PD-94948), confirming robustness under inductive fault conditions.

Can IRF3711SPBF be used with 4.5 V gate drive in synchronous buck applications?

Yes - its R_DS(on) is specified at 6.2–8.5 mΩ with V_GS = 4.5 V, making it suitable for controllers with 5 V logic-level gate outputs. However, total gate charge (29–44 nC) and Miller charge (8.9 nC) must be matched to driver strength to maintain <220 ns rise time and avoid shoot-through in high-frequency operation.

What is the lead-free status and RoHS compliance of IRF3711SPBF?

IRF3711SPBF is lead-free and RoHS-compliant per EU Directive 2011/65/EU. The "PbF" suffix denotes lead-free plating, and the device meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 requirements. Full compliance documentation, including substance declarations and test reports, is available from Infineon upon request.

IRF3711SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 110A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2980 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 120W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF3711SPBF FAQ

1.How can I place an order for IRF3711SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3711SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3711SPBF reliable?

The price and inventory of IRF3711SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3711SPBF is usually 5 days.

3.What payment methods are accepted for IRF3711SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3711SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3711SPBF?

IRF3711SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3711SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3711SPBF?

For technical support, including IRF3711SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3711SPBF requirements.

6.How does Aetrix verify that IRF3711SPBF is sourced from the original manufacturer or authorized distributors?

All IRF3711SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3711SPBF meets industry standards.

7.What is the process for return or replacement of IRF3711SPBF?

All IRF3711SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3711SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3711SPBF part is unused and in its original packaging.

Return procedure for IRF3711SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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