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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3711STRL

Name: IRF3711STRL
Brand: Infineon Technologies
SKU: IRF3711STRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3711STRL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF3711STRL.pdf

Description:: MOSFET N-CH 20V 110A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF3711STRL from Infineon Technologies is a 20 V, 110 A N-channel HEXFET Power MOSFET in TO-220AB package, optimized for synchronous rectification in high-frequency isolated DC-DC converters and buck converters. It features 6.0 mΩ R_DS(on) at V_GS = 10 V, 4.5 V gate drive capability, and fully characterized avalanche performance (E_AS = 460 mJ).

For engineers reviewing the IRF3711STRL datasheet, IRF3711STRL pinout, IRF3711STRL application, or IRF3711STRL equivalent, key selection criteria include low R_DS(on) at 4.5 V, pulsed drain current rating (440 A), thermal resistance (R_θJC = 1.04 °C/W), and body diode reverse recovery characteristics (Q_rr = 61–98 nC).

Technical Context

This MOSFET employs planar silicon HEXFET architecture with ultra-low gate impedance and capacitive-induced turn-on immunity-critical for synchronous FET operation in high-dV/dt environments. Its dynamic parameters (Q_g = 29–44 nC, Q_gd = 8.9 nC) support fast switching in telecom and server power supplies.

The device integrates a robust body diode with V_SD = 0.82–1.3 V (T_J = 25–125 °C, I_S = 30 A), trr = 48–75 ns, and Q_rr = 61–98 nC, enabling reliable operation in hard-switched synchronous topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage for low-voltage synchronous rectifier applications
R_DS(on) max	6.0 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 110 A continuous drain current
I_D continuous	110 A @ T_C = 25 °C - Supports high-current output stages in server VRMs
E_AS	460 mJ - Single-pulse avalanche energy rating ensures ruggedness during unclamped inductive switching
Q_g	29–44 nC - Gate charge range determines driver strength requirement for <200 ns switching transitions
R_θJC	1.04 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting with minimal thermal penalty
trr / Q_rr	48–75 ns / 61–98 nC - Body diode recovery metrics critical for minimizing shoot-through risk in synchronous buck converters

Pinout & Package

IRF3711STRL is housed in a TO-220AB package with exposed drain tab for thermal and electrical connection. The case serves as the drain terminal, enabling low-inductance, high-current PCB layout.

Pin/Terminal	Circuit Role	Design Meaning
1 – GATE	Control electrode	Accepts 0–20 V logic-level or PWM drive; low input capacitance (C_iss = 2980 pF) reduces driver loading
2 – DRAIN	Main current path (high-side or low-side)	Internally connected to metal tab; electrically and thermally coupled to heatsink for efficient power dissipation
3 – SOURCE	Reference node for gate drive and current sensing	Provides return path for load current; used for Kelvin source connections in precision current monitoring
4 – DRAIN	Secondary drain connection	Redundant drain terminal improves current sharing and reduces package inductance in high-frequency switching

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	8.5 mΩ max - Enables direct compatibility with 5 V or 4.5 V controller outputs without level-shifting
Fully characterized avalanche	E_AS = 460 mJ, I_AR = 30 A - Guarantees safe operation under transient overvoltage conditions in unclamped inductive loads
Capacitive-induced turn-on immunity	Validated against dV/dt-induced false triggering - Eliminates need for external gate clamping in high-slew-rate synchronous rectifier circuits
Low gate charge asymmetry	Q_gs/Q_gd ratio ≈ 0.82 - Improves controllability of Miller plateau timing and reduces risk of oscillation during turn-off

Applications

Telecom DC-DC Converters

Server Processor VRMs

Use Scenario: High-frequency isolated forward or LLC converter in 48 V telecom rectifiers delivering 12 V/50 A output.

IC Role / Device Role / Timing Role: Synchronous rectifier FET replacing Schottky diode on secondary side; switched at 300–500 kHz.

Use Value: Reduces conduction loss by >60% vs. 40 V Schottky, improving efficiency from 92% to 95.5% at full load.

Use Scenario: 3-phase interleaved buck converter supplying 1.0–1.2 V @ 300+ A to modern CPU/GPU cores.

IC Role / Device Role / Timing Role: Low-side synchronous FET operating with 100–200 ns dead-time control.

Use Value: 6.0 mΩ R_DS(on) limits I²R loss to <2 W at 300 A peak, enabling compact thermal design.

Industrial Motor Drives

High-Density PoL Modules

Use Scenario: Half-bridge inverter stage for 24 V BLDC motor control in factory automation equipment.

IC Role / Device Role / Timing Role: High-current switching element handling 100 A peak phase current with 10 kHz PWM.

Use Value: Avalanche rating (460 mJ) absorbs inductive kickback during fault conditions without failure.

Use Scenario: Compact 12 V input → 3.3 V/20 A point-of-load module for FPGA or ASIC power rails.

IC Role / Device Role / Timing Role: Primary switching FET in monolithic or discrete buck regulator with >1 MHz switching frequency.

Use Value: Low C_oss (1770 pF) and Crss (280 pF) minimize switching loss and EMI generation at high frequencies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF3710PbF	20 V V_DS, 5.3 mΩ R_DS(on) @ 10 V, but higher Q_g (51 nC)	Lower conduction loss but slower switching; less suitable for >300 kHz operation	Prefer when thermal margin is tight but switching frequency is ≤200 kHz
SiR872DP-T1-GE3	20 V V_DS, 5.0 mΩ R_DS(on) @ 10 V, 3.3× smaller PQFN5x6 package	No through-hole mounting; requires PCB-level thermal vias instead of heatsink interface	Choose for space-constrained, surface-mount-only designs where board-level thermal management is feasible

Compared with IRF3711STRL, IRF3710PbF trades higher gate charge for marginally lower R_DS(on), while SiR872DP-T1-GE3 offers superior power density but eliminates mechanical heatsinking-making IRF3711STRL optimal for high-reliability, through-hole mounted telecom/server power stages requiring proven avalanche ruggedness and thermal serviceability.

Availability

IRF3711STRL is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and industrial motor drives requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF3711STRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

The IRF3711STRL belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-current synchronous rectification and switching in telecom, computing, and industrial power conversion systems.

FAQ

What is the maximum junction temperature for continuous operation?

The IRF3711STRL has a specified junction temperature range of –55 °C to +150 °C. For continuous operation, the absolute maximum steady-state T_J is 150 °C, enforced by thermal derating above T_C = 25 °C at 0.96 W/°C. Operation beyond this limit risks irreversible parametric shift and bond-wire fatigue.

Can IRF3711STRL be driven directly by a 3.3 V microcontroller GPIO?

No-its gate threshold voltage (V_GS(th)) ranges from 1.0 V to 3.0 V, but full enhancement requires ≥4.5 V for acceptable R_DS(on) (≤8.5 mΩ). At 3.3 V, R_DS(on) exceeds 15 mΩ, increasing conduction loss by >150%. A dedicated gate driver or level shifter is required for reliable switching.

Is the TO-220AB package lead-free and RoHS-compliant?

Yes-the "STRL" suffix denotes tape-and-reel packaging, and the device carries the "PbF" designation (e.g., IRF3711SPbF) confirming lead-free construction per JEDEC J-STD-609 and RoHS Directive 2011/65/EU. The package uses matte tin plating on leads and meets IPC/JEDEC J-STD-020 moisture sensitivity level 1.

How does its body diode performance compare to discrete Schottky diodes?

The integrated body diode has V_SD = 0.82–1.3 V and Q_rr = 61–98 nC-higher forward drop than a 45 V Schottky (0.4–0.55 V) but significantly lower reverse recovery charge than standard PN diodes. In synchronous rectification, it eliminates reverse recovery spikes, though Schottky replacement remains beneficial only in ultra-low-voltage (<1.8 V), high-frequency (>1 MHz) applications.

IRF3711STRL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 110A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2980 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 120W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF3711STRL FAQ

1.How can I place an order for IRF3711STRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3711STRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3711STRL reliable?

The price and inventory of IRF3711STRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3711STRL is usually 5 days.

3.What payment methods are accepted for IRF3711STRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3711STRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3711STRL?

IRF3711STRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3711STRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3711STRL?

For technical support, including IRF3711STRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3711STRL requirements.

6.How does Aetrix verify that IRF3711STRL is sourced from the original manufacturer or authorized distributors?

All IRF3711STRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3711STRL meets industry standards.

7.What is the process for return or replacement of IRF3711STRL?

All IRF3711STRL units undergo pre-shipment inspection (PSI). If there is an issue with IRF3711STRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3711STRL part is unused and in its original packaging.

Return procedure for IRF3711STRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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