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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3711STRLPBF

Name: IRF3711STRLPBF
Brand: Infineon Technologies
SKU: IRF3711STRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3711STRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF3711STRLPBF.pdf

Description:: MOSFET N-CH 20V 110A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF3711STRLPBF from Infineon Technologies is a 20 V, 110 A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, featuring 6.0 mΩ R_DS(on) at V_GS = 10 V and optimized for synchronous rectification in high-frequency DC-DC converters. It delivers ultra-low gate impedance, fully characterized avalanche capability (460 mJ), and robust thermal performance (R_θJC = 1.04 °C/W).

For engineers reviewing the IRF3711STRLPBF datasheet, IRF3711STRLPBF pinout, IRF3711STRLPBF application, or IRF3711STRLPBF equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, 120 W power dissipation at T_C = 25 °C, and pulsed drain current rating of 440 A - critical for telecom and server power supply design.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-free die construction to minimize R_DS(on) while maintaining low gate charge (Q_g = 29–44 nC) and fast switching (t_r = 220 ns, t_f = 12 ns). Its body diode exhibits 50–75 ns reverse recovery time and 61–98 nC Q_rr, enabling efficient synchronous operation without capacitive-induced turn-on risk.

The device supports stable operation across –55 °C to +150 °C junction temperature range, with positive V_(BR)DSS temperature coefficient (0.022 V/°C) and gate threshold voltage (V_GS(th)) tightly specified between 1.0 V and 3.0 V - ensuring predictable turn-on behavior under varying thermal and bias conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage for low-voltage synchronous buck stages in server VRMs and telecom PSUs.
R_DS(on) max @ 10 V	6.0 mΩ - Enables <1.2 W conduction loss at 110 A DC, reducing heatsink requirements in high-current rails.
I_D @ T_C = 25 °C	110 A - Continuous current rating usable in PCB-mounted TO-220AB packages with adequate heatsinking.
E_AS	460 mJ - Single-pulse avalanche energy rating supports unclamped inductive switching in hard-switched topologies.
Q_g	29–44 nC - Gate charge range determines driver strength requirement; compatible with standard 1.8 Ω gate resistors for controlled dV/dt.
t_r/t_f	220 ns / 12 ns - Fast switching transitions reduce switching losses in >500 kHz DC-DC converters.
R_θJC	1.04 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting for thermal management in space-constrained designs.

Pinout & Package

IRF3711STRLPBF uses the industry-standard TO-220AB package with isolated tab (drain-connected), suitable for through-hole mounting and direct heatsink attachment. Thermal pad is electrically connected to Drain (Pin 2 and Pin 4).

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control electrode	Receives logic-level (≥4.5 V) gate drive signal; requires low-impedance driver due to 29–44 nC total gate charge.
2 - Drain	Main current path (high-side)	Connected to heatsink tab; carries full load current and must be isolated from other potentials when mounted to shared thermal mass.
3 - Source	Reference node / return path	Serves as local ground reference for gate drive; source inductance must be minimized to prevent oscillation during fast switching.
4 - Drain	Secondary drain connection	Provides redundant current path and improved thermal conduction; electrically tied to Pin 2 and heatsink tab.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	8.5 mΩ max - Enables direct logic-level drive from microcontrollers or PWM controllers without level-shifting.
Fully characterized avalanche	460 mJ E_AS - Eliminates need for external snubbers in flyback or forward converter primary switches.
Capacitive-induced turn-on immunity	Validated via dV/dt testing - Prevents false turn-on during high dv/dt events in synchronous rectifier position.
Low gate-to-drain charge (Q_gd)	8.9 nC - Reduces Miller effect, improving stability and allowing higher switching frequencies without shoot-through risk.
Enhanced body diode performance	Q_rr = 61–98 nC, t_rr = 48–75 ns - Minimizes reverse recovery losses in synchronous rectification mode.

Applications

Telecom DC-DC Converters

Server VRM Synchronous Rectifiers

Use Scenario: High-frequency isolated DC-DC modules in 48 V telecom systems delivering 12 V/200 A output.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diodes to reduce conduction losses.

Use Value: 6.0 mΩ R_DS(on) cuts rectifier losses by >40% vs. 40 V Schottky, improving system efficiency from 92% to 94.5%.

Use Scenario: Multiphase buck converters supplying core voltage to Intel Xeon or AMD EPYC processors.

IC Role / Device Role / Timing Role: Low-side synchronous FET in 300–600 kHz switching stage with tight duty-cycle control.

Use Value: 4.5 V gate threshold and 8.5 mΩ on-resistance at 4.5 V enable direct drive from integrated controller outputs, simplifying gate drive design.

Industrial SMPS Outputs

High-Current POL Converters

Use Scenario: 24 V input, 3.3 V/80 A output power supplies for PLC I/O modules and motion controllers.

IC Role / Device Role / Timing Role: Final-stage synchronous rectifier in non-isolated buck topology.

Use Value: 110 A continuous rating and 120 W power dissipation allow single-device implementation without paralleling, reducing BOM count and layout complexity.

Use Scenario: Point-of-load converters on FPGA or ASIC carrier boards requiring <1 V output at up to 100 A.

IC Role / Device Role / Timing Role: High-current, low-V_DS switch in compact, thermally constrained PCB areas.

Use Value: TO-220AB package with isolated tab enables direct heatsink mounting on board edge or metal chassis, achieving <40 °C/W system thermal resistance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3713PbF	R_DS(on) = 7.0 mΩ @ 4.5 V; lower V_DS rating (15 V); same TO-220AB package.	Better suited for ≤15 V systems where gate drive is limited to 4.5 V only; reduced avalanche margin (E_AS = 280 mJ).	Select when operating voltage is strictly ≤15 V and gate drive lacks 10 V headroom.
STP200N3LLH6	R_DS(on) = 2.8 mΩ @ 10 V; 30 V V_DS; D²PAK package; higher Q_g (105 nC).	Higher voltage margin and lower on-resistance, but requires larger footprint and stronger gate driver; not drop-in compatible.	Choose for next-generation 24 V input systems needing lower conduction loss and higher reliability margin.

Compared with IRF3711STRLPBF, IRL3713PbF trades voltage headroom for enhanced 4.5 V drive margin, while STP200N3LLH6 offers superior R_DS(on) and voltage rating at the cost of gate drive demand and package compatibility - making IRF3711STRLPBF optimal for cost-sensitive, 20 V-class telecom/server synchronous rectification.

Availability

IRF3711STRLPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and industrial SMPS requiring stable component supply, lead-free compliance (RoHS), and long-term manufacturability.

Supply support for IRF3711STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

The IRF3711STRLPBF belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-current synchronous rectification in high-frequency switched-mode power supplies targeting telecom infrastructure and data center power delivery.

FAQ

What is the maximum safe operating frequency for IRF3711STRLPBF in a synchronous buck converter?

IRF3711STRLPBF supports reliable operation up to 1 MHz in well-designed synchronous buck converters, provided gate drive strength (≤1.8 Ω series resistor), PCB layout (minimized source inductance), and thermal management (T_J ≤ 130 °C) are maintained. Its 220 ns rise time and 12 ns fall time enable sub-500 ns dead-time control without shoot-through risk.

Does IRF3711STRLPBF require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to dampen ringing and control dV/dt. A 1.8 Ω resistor is recommended per the datasheet switching test circuit, balancing switching speed (t_r/t_f) and EMI. Lower values (<1 Ω) increase peak gate current and risk driver overstress; higher values (>5 Ω) degrade efficiency and increase switching losses.

Can IRF3711STRLPBF be used in parallel configurations?

Yes - IRF3711STRLPBF supports paralleling due to its positive R_DS(on) temperature coefficient, which promotes current sharing. Best practice requires matched gate drive paths, identical source inductance, and symmetrical PCB layout. Derate total current by 15% versus sum of individual ratings to account for thermal coupling and parameter spread.

Is the TO-220AB package of IRF3711STRLPBF electrically isolated?

No - the TO-220AB package has an electrically connected drain tab (Pins 2 and 4). The metal tab is not insulated and must be isolated from the heatsink using a mica or polymer insulator kit unless the heatsink is floating or referenced to drain potential. This differs from TO-220FP or D²PAK variants with isolated tabs.

IRF3711STRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 110A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2980 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 120W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF3711STRLPBF FAQ

1.How can I place an order for IRF3711STRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3711STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3711STRLPBF reliable?

The price and inventory of IRF3711STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3711STRLPBF is usually 5 days.

3.What payment methods are accepted for IRF3711STRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3711STRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3711STRLPBF?

IRF3711STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3711STRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3711STRLPBF?

For technical support, including IRF3711STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3711STRLPBF requirements.

6.How does Aetrix verify that IRF3711STRLPBF is sourced from the original manufacturer or authorized distributors?

All IRF3711STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3711STRLPBF meets industry standards.

7.What is the process for return or replacement of IRF3711STRLPBF?

All IRF3711STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3711STRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3711STRLPBF part is unused and in its original packaging.

Return procedure for IRF3711STRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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