Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3711STRR

Name: IRF3711STRR
Brand: Infineon Technologies
SKU: IRF3711STRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF3711STRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF3711STRR.pdf

Description:: MOSFET N-CH 20V 110A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,531

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF3711STRR from Infineon Technologies is a 20 V, 110 A N-channel HEXFET Power MOSFET in TO-220AB package, optimized for synchronous buck converters and high-frequency isolated DC-DC applications. It features 6.0 mΩ R_DS(on) at V_GS = 10 V, ultra-low gate charge (Q_g = 29–44 nC), and fully characterized avalanche capability (E_AS = 460 mJ).

For engineers reviewing the IRF3711STRR datasheet, IRF3711STRR pinout, IRF3711STRR application, or IRF3711STRR equivalent, key selection criteria include R_DS(on) at 4.5 V, capacitive-induced turn-on immunity, reverse recovery performance (Q_rr = 61–98 nC), and thermal resistance (R_θJC = 1.04 °C/W).

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-free design to achieve low on-resistance and fast switching. Its gate threshold voltage (V_GS(th) = 1.0–3.0 V) enables robust 4.5 V drive compatibility, while the body diode exhibits low forward voltage (V_SD = 0.82–0.88 V at 30 A) and controlled reverse recovery (t_rr = 48–75 ns).

The device is rated for continuous operation up to T_J = 150 °C and supports unclamped inductive switching with I_AR = 30 A and E_AS = 460 mJ. Its dynamic parameters-including C_iss = 2980 pF, C_oss = 1770 pF, and Crss = 280 pF-are specified at V_DS = 10 V and f = 1 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum drain-source blocking voltage for low-voltage synchronous rectification.
R_DS(on) max	6.0 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 110 A, critical for server CPU VRMs.
I_D continuous	110 A @ T_C = 25 °C - Supports high-current power stages without forced air cooling.
Q_g	29–44 nC - Low total gate charge reduces driver power and improves efficiency in >500 kHz switching.
E_AS	460 mJ - Single-pulse avalanche energy rating ensures reliability during transient overvoltage events.
R_θJC	1.04 °C/W - Enables direct heatsink mounting with predictable junction temperature rise under full load.
t_rr	48–75 ns - Fast body diode recovery minimizes shoot-through risk in synchronous buck topologies.

Pinout & Package

IRF3711STRR uses the standard TO-220AB package with exposed drain tab for thermal and electrical connection. The case is electrically connected to pins 2 and 4 (both Drain terminals), enabling low-inductance PCB layout and efficient heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires ≤3.0 V threshold for reliable 4.5 V logic-level drive.
2	Drain	Main high-side current path; electrically tied to metal tab for thermal dissipation.
3	Source	Power return node; referenced to driver ground in synchronous buck low-side configuration.
4	Drain	Second drain connection; used for parallel routing or enhanced thermal contact to heatsink.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	8.5 mΩ - Enables direct drive from 5 V microcontrollers or PWM controllers without level-shifting.
Fully characterized avalanche	E_AS = 460 mJ, I_AR = 30 A - Eliminates need for external snubbers in hard-switched topologies.
Capacitive-induced turn-on immunity	Verified via dV/dt stress testing - Prevents false triggering during high dv/dt transients in bridge circuits.
Low Q_gd/Q_g ratio	8.9/29 ≈ 31% - Reduces Miller effect, improving switching controllability in high-frequency operation.

Applications

Server Processor VRM

Telecom DC-DC Converter

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.2 V to x86 CPUs in data center servers.

IC Role / Device Role / Timing Role: Synchronous rectifier FET operating at 300–600 kHz with 4.5 V gate drive from integrated controller.

Use Value: 6.0 mΩ R_DS(on) limits conduction loss to <0.7 W per phase at 110 A, reducing thermal density and enabling compact heatsink design.

Use Scenario: Isolated forward or LLC converter in 48 V telecom rectifiers delivering 12 V/20 A to base station subsystems.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diodes to improve efficiency above 94%.

Use Value: Body diode t_rr ≤ 75 ns and Q_rr ≤ 98 nC minimize reverse recovery losses and EMI during zero-voltage switching transitions.

Industrial Motor Drive Inverter

Automotive ADAS Power Supply

Use Scenario: Half-bridge output stage in 24 V BLDC motor drives for HVAC blowers and pumps.

IC Role / Device Role / Timing Role: Low-side switch in 20 kHz PWM inverter with bootstrap gate drive and 100 µs dead-time.

Use Value: Avalanche rating (E_AS = 460 mJ) withstands inductive kickback during short-circuit fault conditions without failure.

Use Scenario: Compact 5 V/3 A point-of-load regulator for radar sensor modules in automotive ADAS systems.

IC Role / Device Role / Timing Role: High-efficiency synchronous buck switch operating at 1 MHz with minimal PCB footprint.

Use Value: TO-220AB package allows direct bolt-down heatsinking to metal chassis, meeting AEC-Q101 thermal cycling requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3713PBF	R_DS(on) = 7.0 mΩ @ 4.5 V; lower V_DS = 30 V; Q_g = 32 nC	Better 4.5 V drive margin but higher conduction loss at 110 A	Preferred when gate drive is strictly 4.5 V and 20 V rating is insufficient for system margin.
STP30NF20	R_DS(on) = 20 mΩ @ 10 V; V_DS = 200 V; TO-220FP package (no tab isolation)	Higher voltage rating but 3.3× higher R_DS(on), unsuitable for high-current low-V_DS apps	Only viable if system requires >100 V blocking and thermal constraints allow higher loss.

Compared with IRL3713PBF and STP30NF20, IRF3711STRR delivers the lowest R_DS(on) and highest current capability within its 20 V class, making it optimal for space-constrained, high-efficiency synchronous rectification where thermal management relies on direct heatsink coupling.

Availability

IRF3711STRR is available at Aetrix Electronics and suitable for server processor VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for IRF3711STRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRF3711STRR belongs to the HEXFET Power MOSFET product line, engineered specifically for high-frequency, high-current synchronous rectification in server, telecom, and industrial power supplies.

FAQ

Is IRF3711STRR suitable for 4.5 V gate drive applications?

Yes. With V_GS(th) = 1.0–3.0 V and R_DS(on) = 8.5 mΩ at V_GS = 4.5 V, IRF3711STRR is explicitly characterized for logic-level drive. Its low threshold and guaranteed on-resistance at 4.5 V enable direct interface with standard PWM controllers and microcontroller GPIOs without level shifters.

What is the maximum junction temperature and how is it validated?

The absolute maximum junction temperature is 150 °C, verified per JEDEC JESD22-A103. This rating is supported by thermal characterization including R_θJC = 1.04 °C/W and transient thermal impedance curves (Figure 11), ensuring safe operation under pulsed loads and steady-state conditions up to rated current.

Does IRF3711STRR have avalanche ruggedness, and how is it tested?

Yes. It is fully characterized for unclamped inductive switching with E_AS = 460 mJ and I_AR = 30 A (per Figure 12). Testing follows JEDEC JESD24-11 using standardized test circuits (Figures 12a/12c) with controlled di/dt and voltage re-application, confirming single-pulse survivability without parameter degradation.

Can IRF3711STRR be used in parallel configurations?

Yes. Its positive temperature coefficient of R_DS(on) (see Figure 4) ensures inherent current sharing stability. Parallel use is validated in application notes for multi-phase VRMs, with recommended gate resistor matching (≤5% tolerance) and symmetrical PCB layout to minimize loop inductance imbalance.

IRF3711STRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 110A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2980 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 120W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF3711STRR FAQ

1.How can I place an order for IRF3711STRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3711STRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3711STRR reliable?

The price and inventory of IRF3711STRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3711STRR is usually 5 days.

3.What payment methods are accepted for IRF3711STRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3711STRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3711STRR?

IRF3711STRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3711STRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3711STRR?

For technical support, including IRF3711STRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3711STRR requirements.

6.How does Aetrix verify that IRF3711STRR is sourced from the original manufacturer or authorized distributors?

All IRF3711STRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3711STRR meets industry standards.

7.What is the process for return or replacement of IRF3711STRR?

All IRF3711STRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF3711STRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3711STRR part is unused and in its original packaging.

Return procedure for IRF3711STRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…