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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3711STRRPBF

Name: IRF3711STRRPBF
Brand: Infineon Technologies
SKU: IRF3711STRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3711STRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF3711STRRPBF.pdf

Description:: MOSFET N-CH 20V 110A D2PAK

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Product details

Overview

IRF3711STRRPBF from Infineon Technologies is a 20 V, 110 A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for synchronous rectification in high-frequency isolated DC-DC converters and buck converters for server CPU power delivery. It features 6.0 mΩ R_DS(on) at V_GS = 10 V, ultra-low gate impedance, and fully characterized avalanche capability.

For engineers reviewing the IRF3711STRRPBF datasheet, IRF3711STRRPBF pinout, IRF3711STRRPBF application, or IRF3711STRRPBF equivalent, key selection criteria include R_DS(on) @ 4.5 V (8.5 mΩ max), Q_g (44 nC max), trr (75 ns max), avalanche energy rating (460 mJ), and thermal resistance R_θJC (1.04 °C/W).

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-free design to achieve low on-resistance while maintaining robust unclamped inductive switching (UIS) performance. Its gate threshold voltage (1.0–3.0 V) and low C_iss (2980 pF) support fast, stable switching at >500 kHz in synchronous buck topologies.

The device integrates a low-V_F body diode (0.88 V typ. @ 30 A, 25°C) with controlled reverse recovery (Q_rr = 92 nC max), enabling capacitive-induced turn-on immunity and reduced shoot-through risk in high-side synchronous FET configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 12 V input rails and low-voltage point-of-load (POL) converters.
R_DS(on) @ V_GS = 10 V	6.0 mΩ max - Enables <1.2 W conduction loss at 110 A continuous drain current in thermally managed designs.
Q_g	44 nC max - Supports efficient gate drive with standard 1.8 Ω source/sink drivers at >1 MHz switching frequencies.
t_rr	75 ns max - Limits diode recovery-related switching losses and EMI in hard-switched synchronous rectifiers.
E_AS	460 mJ - Withstands single-pulse avalanche stress during transient overvoltage events without failure.
R_θJC	1.04 °C/W - Allows direct heatsink mounting for 120 W dissipation at ≤100°C case temperature rise.
I_D @ T_C = 100°C	69 A - Specifies usable continuous current under industrial ambient conditions with active cooling.

Pinout & Package

IRF3711STRRPBF is housed in a TO-220AB package with isolated tab (drain-connected), standardized for mechanical mounting and thermal interface to heatsinks. Lead assignments follow JEDEC outline: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, Pin 4 = Drain (dual-drain configuration).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Low-impedance input requiring <44 nC charge for full enhancement; sensitive to ESD (±20 V rating).
2 (Drain)	High-side power node	Internally connected to metal tab; electrically tied to Pin 4 for enhanced current sharing and thermal path.
3 (Source)	Reference node / return path	Serves as local ground reference for gate drive; carries full load current and body diode reverse recovery current.
4 (Drain)	Secondary drain connection	Redundant drain terminal improving current distribution and reducing package inductance in high-di/dt applications.

Key Features

Feature	Design Value
Ultra-low R_DS(on) @ 4.5 V	8.5 mΩ max - Enables efficient operation directly from 5 V logic-level gate drives without level-shifting.
Capacitive-induced turn-on immunity	Validated via dV/dt testing - Prevents false turn-on during high dv/dt transitions in synchronous rectifier mode.
Characterized reverse recovery	Q_rr = 92 nC max, t_rr = 75 ns - Enables accurate loss modeling and snubberless layout in high-frequency SMPS.
Robust avalanche rating	E_AS = 460 mJ - Eliminates need for external clamping in inductive load switching and fault transients.
Lead-free and RoHS-compliant	Pb-free plating per PD-94948 - Meets global environmental compliance requirements for industrial and telecom equipment.

Applications

Telecom DC-DC Converters

Server CPU Voltage Regulators

Use Scenario: High-efficiency 48 V to 12 V isolated intermediate bus converter operating at 300–500 kHz.

IC Role / Device Role / Timing Role: Synchronous rectifier FET replacing Schottky diodes on secondary side to reduce conduction loss.

Use Value: Achieves >95% efficiency at full load by cutting diode forward drop loss and leveraging 6.0 mΩ R_DS(on).

Use Scenario: Multiphase buck converter delivering up to 200 A to modern x86 processors.

IC Role / Device Role / Timing Role: Low-side synchronous FET handling high RMS current with minimal thermal rise.

Use Value: Enables compact 2-oz copper PCB layout with R_θJC = 1.04 °C/W and 69 A continuous rating at 100°C case.

Industrial Motor Drives

LED Driver Power Stages

Use Scenario: 24 V BLDC motor inverter half-bridge with PWM frequency ≥20 kHz.

IC Role / Device Role / Timing Role: High-current switching element in low-side position with integrated body diode commutation.

Use Value: Reduces switching loss via low Q_g (44 nC) and supports fast freewheeling with t_rr = 75 ns.

Use Scenario: Constant-current LED driver for high-bay lighting using buck topology at 200 kHz.

IC Role / Device Role / Timing Role: Primary switching FET controlling inductor current with precise duty-cycle modulation.

Use Value: Maintains regulation accuracy across line/load variations due to stable V_GS(th) (1.0–3.0 V) and low R_DS(on) drift.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3713PBF	R_DS(on) = 7.0 mΩ @ 4.5 V (vs. 8.5 mΩ); lower V_GS(th) (0.8–2.0 V); same TO-220AB package.	Better suited for 3.3 V gate drive systems; slightly higher conduction loss at 10 V drive.	Select when gate voltage is limited to ≤4.5 V and lowest possible R_DS(on) at logic levels is critical.
STP20NF20	V_DS = 200 V; R_DS(on) = 35 mΩ @ 10 V; higher voltage rating but significantly higher on-resistance.	Not suitable for low-voltage POL converters; applicable only where 200 V blocking is required.	Choose only if system requires >100 V breakdown margin; not a functional substitute for IRF3711STRRPBF's 20 V/110 A profile.

Compared with IRL3713PBF and STP20NF20, IRF3711STRRPBF uniquely balances ultra-low R_DS(on), high current capability (110 A), and tight avalanche energy rating (460 mJ) for 20 V synchronous rectification-making it irreplaceable in high-density, high-efficiency telecom and server power stages.

Availability

IRF3711STRRPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server CPU voltage regulators, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for IRF3711STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF3711STRRPBF belongs to the HEXFET Power MOSFET product line, engineered specifically for high-frequency, high-efficiency power conversion in telecom infrastructure and data center power supplies.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRF3711STRRPBF supports 69 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This value assumes proper heatsinking and accounts for R_DS(on) increase with junction temperature, validated by Fig 9 in the datasheet.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor (typically 1.8 Ω) is recommended to dampen ringing and control dI/dt during switching, as confirmed by the test condition for td(on)/td(off) timing parameters. The device's 44 nC total gate charge and low input capacitance make it responsive to moderate gate resistance without compromising switching speed.

Can IRF3711STRRPBF be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (shown in Fig 4) ensures inherent current sharing when paralleled. Designers must match gate drive loop inductance and use Kelvin-source connections to maintain balance, especially above 200 A aggregate current.

Is the TO-220AB package electrically isolated?

No-the TO-220AB package has an electrically connected metal tab tied to the drain (Pins 2 and 4). For isolation, a mica washer or silicone pad with appropriate dielectric rating must be used between the tab and heatsink, as confirmed by the "Isolated Tab" note in Infineon's packaging documentation.

IRF3711STRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 110A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2980 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 120W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF3711STRRPBF FAQ

1.How can I place an order for IRF3711STRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3711STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3711STRRPBF reliable?

The price and inventory of IRF3711STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3711STRRPBF is usually 5 days.

3.What payment methods are accepted for IRF3711STRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3711STRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3711STRRPBF?

IRF3711STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3711STRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3711STRRPBF?

For technical support, including IRF3711STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3711STRRPBF requirements.

6.How does Aetrix verify that IRF3711STRRPBF is sourced from the original manufacturer or authorized distributors?

All IRF3711STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3711STRRPBF meets industry standards.

7.What is the process for return or replacement of IRF3711STRRPBF?

All IRF3711STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3711STRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3711STRRPBF part is unused and in its original packaging.

Return procedure for IRF3711STRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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