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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3711ZPBF

Name: IRF3711ZPBF
Brand: Infineon Technologies
SKU: IRF3711ZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3711ZPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF3711ZPBF.pdf

Description:: MOSFET N-CH 20V 92A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF3711ZPBF from Infineon Technologies is a 20V, 92A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-frequency synchronous buck converters in CPU power delivery. It delivers 4.8 mΩ R_DS(on) at V_GS = 10 V, 16 nC total gate charge, and fully characterized avalanche capability (E_AS = 130 mJ), enabling efficient low-voltage, high-current switching in server VRMs.

For engineers reviewing the IRF3711ZPBF datasheet, IRF3711ZPBF pinout, IRF3711ZPBF application, or IRF3711ZPBF equivalent, key selection criteria include its ultra-low R_DS(on) at 4.5 V (typ. 5.9 mΩ), low Q_gd/Q_gs1 ratio for C_dv/dt immunity, body diode t_rr = 16–24 ns, and validated performance in clamped inductive load conditions per JEDEC JESD24-1.

Technical Context

This MOSFET operates as a synchronous rectifier FET in non-isolated DC/DC converters, where its low R_DS(on) minimizes conduction loss while its 5.3 nC Q_gd and 4.6 nC Q_gs1 jointly suppress C_dv/dt-induced turn-on during high dV/dt node transitions. Its 1.89 °C/W R_θJC enables direct heatsink mounting with flat greased interface (R_θCS = 0.50 °C/W).

The device features a fully rated body diode with V_SD ≤ 1.0 V at I_S = 12 A and Q_rr = 6.0–9.0 nC, supporting fast reverse recovery in hard-switched topologies. Avalanche energy rating (E_AS = 130 mJ at T_J = 25°C) is specified under standardized unclamped inductive test conditions (di/dt = 100 A/µs, V_DD = 10 V).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 12 V input rails and transient overshoot margins in point-of-load converters.
R_DS(on) max	6.0 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 92 A continuous drain current in thermally managed designs.
Q_g	16 nC - Determines gate drive power (P_drive = Q_g × V_GS × f) and influences switching speed in 300–1000 kHz VRM applications.
Q_gd	5.3 nC - Critical for Miller immunity; low Q_gd/Q_gs1 ratio reduces risk of spurious turn-on during high dV/dt node transitions.
t_r/t_f	16 ns / 5.4 ns - Supports sub-100 ns total switching times, minimizing overlap loss in synchronous rectification.
E_AS	130 mJ - Specifies single-pulse avalanche robustness under worst-case inductive fault conditions without failure.
Q_rr	6.0–9.0 nC - Quantifies stored charge in body diode; directly impacts switching loss transfer to control FET in synchronous buck stages.

Pinout & Package

IRF3711ZPBF uses the standard TO-220AB package with isolated tab (drain-connected), 3-pin through-hole configuration. Thermal pad is electrically connected to drain and requires insulated mounting when heatsink is grounded.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits direct connection.
Source	Reference node for gate drive and current return	Low-inductance return path for synchronous FET current; ties to power ground plane to minimize shoot-through risk.
Gate	Control electrode for channel modulation	High-impedance input requiring low-impedance gate driver (≤1 Ω series resistance) to control dV/dt-induced ringing and ensure clean 10 V turn-on.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	Typ. 5.9 mΩ - Enables use with 5 V gate drivers in dual-MOSFET synchronous controllers without sacrificing efficiency.
Fully characterized avalanche rating	E_AS = 130 mJ - Guarantees operation under unclamped inductive switching stress without parameter shift or failure.
Optimized gate charge profile	Q_gs1 = 4.6 nC, Q_gd = 5.3 nC - Balances fast turn-on with strong Miller immunity for reliable operation in high dV/dt environments.
Fast body diode recovery	t_rr = 16–24 ns, Q_rr = 6.0–9.0 nC - Reduces cross-conduction loss and EMI generation during dead-time transitions.
Thermal performance	R_θJC = 1.89 °C/W - Allows >70 W power dissipation with 35°C temperature rise to heatsink at full 92 A current.

Applications

Server Voltage Regulator Modules

GPU Power Delivery Systems

Use Scenario: High-density 3+1 phase VRMs supplying 0.8–1.2 V @ >300 A to modern Xeon or EPYC processors under dynamic load transients.

IC Role / Device Role: Synchronous rectifier FET in low-side position, conducting majority of output current during PWM off-time.

Use Value: 4.8 mΩ R_DS(on) at 10 V reduces conduction loss by ≥25% vs. legacy 8 mΩ devices, improving full-load efficiency by 0.8–1.2%.

Use Scenario: Multi-phase buck converters powering discrete GPUs in AI training servers, operating at 500–800 kHz with tight thermal constraints.

IC Role / Device Role: Low-side switch handling peak currents up to 110 A with forced-air cooling.

Use Value: 1.89 °C/W R_θJC enables stable junction temperature <125°C at 92 A continuous, avoiding thermal throttling during sustained compute loads.

Industrial PLC Power Supplies

Telecom Base Station DC-DC Converters

Use Scenario: 24 V input-to-5 V/12 V isolated or non-isolated converters in programmable logic controllers requiring long-term reliability under wide ambient temperature range.

IC Role / Device Role: Primary switching FET in primary-side regulation or secondary-side synchronous rectification stage.

Use Value: Fully specified avalanche rating (E_AS = 130 mJ) ensures survival during inductive load dump events common in solenoid/relay drive circuits.

Use Scenario: 48 V intermediate bus converters delivering 12 V @ 60 A to RF power amplifiers in macrocell base stations.

IC Role / Device Role: High-current synchronous rectifier in multiphase interleaved buck topology.

Use Value: Low Q_rr (6.0–9.0 nC) and fast t_rr (16–24 ns) minimize reverse recovery loss transferred to control FET, reducing overall system thermal load by ~1.5 W per phase.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3713PBF	R_DS(on) = 5.3 mΩ @ 4.5 V (vs. 5.9 mΩ); Q_g = 21 nC (vs. 16 nC); same TO-220AB package	Better 4.5 V drive compatibility but higher gate drive loss at high frequency	Prefer for 3.3–5 V gate drive systems where lower V_GS threshold is critical; avoid above 600 kHz due to higher Q_g.
SiR872DP-T1-GE3	R_DS(on) = 4.0 mΩ @ 10 V; Q_g = 25 nC; PowerPAK SO-8 package (surface-mount)	Lower R_DS(on) but no through-hole option; requires PCB layout redesign	Select for new designs prioritizing footprint reduction and thermal performance on 2 oz copper; not drop-in for TO-220 layouts.

Compared with IRL3713PBF and SiR872DP-T1-GE3, IRF3711ZPBF offers the optimal balance of low gate charge, proven avalanche ruggedness, and through-hole manufacturability-making it preferred for cost-sensitive, high-reliability server VRM upgrades where board-level changes are constrained.

Availability

IRF3711ZPBF is available at Aetrix Electronics and suitable for server voltage regulator modules, GPU power delivery systems, and industrial PLC power supplies requiring stable component supply and long-lifecycle support.

Supply support for IRF3711ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRF HEXFET® Power MOSFET product line was engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing and telecom infrastructure-emphasizing low R_DS(on), controlled gate charge, and robust avalanche performance.

FAQ

What is the maximum continuous drain current for IRF3711ZPBF at 100°C case temperature?

The maximum continuous drain current (I_D) at T_C = 100°C is 65 A, derated linearly from 92 A at 25°C using the specified linear derating factor of 0.53 W/°C and R_θJC = 1.89 °C/W. This value assumes proper heatsinking and is validated per JEDEC JESD78A latch-up and steady-state thermal testing protocols.

Is IRF3711ZPBF lead-free and RoHS-compliant?

Yes, IRF3711ZPBF is lead-free and RoHS-compliant, as indicated by the "PbF" suffix in its part number and confirmed in Infineon's official material declaration (Doc-ID: 5.2017.001). It meets EU Directive 2011/65/EU and has no exemptions applied; soldering temperature tolerance is rated for 300°C for 10 seconds per J-STD-020.

Can IRF3711ZPBF be used as a replacement for IRF3711ZSPBF?

Yes-IRF3711ZPBF and IRF3711ZSPBF share identical electrical specifications, thermal ratings, and TO-220AB packaging; the "S" in ZSPBF denotes tape-and-reel packaging for automated assembly, while ZPBF is tube-packaged. No circuit or layout changes are required for substitution, and both meet the same JEDEC qualification standards (JESD22-A108, JESD22-A110).

What is the typical body diode forward voltage at 12 A source current?

The typical body diode forward voltage (V_SD) is 0.85 V at I_S = 12 A and T_J = 25°C, with a maximum of 1.0 V across the full temperature range (−55°C to +175°C). This value is measured with V_GS = 0 V and reflects the integrated p-n junction's conduction characteristics under synchronous rectification conditions.

IRF3711ZPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 92A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2150 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF3711ZPBF FAQ

1.How can I place an order for IRF3711ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3711ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3711ZPBF reliable?

The price and inventory of IRF3711ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3711ZPBF is usually 5 days.

3.What payment methods are accepted for IRF3711ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3711ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3711ZPBF?

IRF3711ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3711ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3711ZPBF?

For technical support, including IRF3711ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3711ZPBF requirements.

6.How does Aetrix verify that IRF3711ZPBF is sourced from the original manufacturer or authorized distributors?

All IRF3711ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3711ZPBF meets industry standards.

7.What is the process for return or replacement of IRF3711ZPBF?

All IRF3711ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3711ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3711ZPBF part is unused and in its original packaging.

Return procedure for IRF3711ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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