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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3717

Name: IRF3717
Brand: Infineon Technologies
SKU: IRF3717
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3717

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF3717.pdf

Description:: MOSFET N-CH 20V 20A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF3717 from Infineon Technologies is a 20 V, 20 A N-channel HEXFET Power MOSFET in SO-8 package, optimized as a synchronous rectifier FET in low-voltage DC-DC converters. It delivers 3.7 mΩ R_DS(on) at V_GS = 10 V, 22 nC total gate charge, and features an integrated body diode with 22 ns reverse recovery time and 13 nC Q_rr, enabling high-efficiency operation in notebook CPU power stages.

For engineers reviewing the IRF3717 datasheet, IRF3717 pinout, IRF3717 application, or IRF3717 equivalent, key selection criteria include R_DS(on) at 4.5 V, Q_gd/Q_gs1 ratio for C_dv/dt immunity, body diode Q_rr and trr, thermal resistance R_θJA = 50 °C/W, and SO-8 lead-frame construction for PCB-level thermal management.

Technical Context

The IRF3717 is engineered for synchronous rectification in non-isolated buck converters where the source is tied to the switching node and experiences rapid dV/dt transients up to 100 A/µs. Its ultra-low gate impedance and 7.3 nC Q_gd minimize Miller-induced turn-on risk, while its 4.4 mΩ max R_DS(on) at 10 V ensures conduction loss dominance below 10 A RMS.

It operates with a 1.55–2.45 V gate threshold (V_GS(th)) and exhibits negative temperature coefficient for V_GS(th) (−5.4 mV/°C), supporting stable parallel operation. The device is fully characterized for unclamped inductive switching, delivering 32 mJ single-pulse avalanche energy at I_AS = 16 A and T_J = 25°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 12 V input rails and transient overshoot in point-of-load converters
R_DS(on) max @ 10 V	4.4 mΩ - Enables <120 mW conduction loss at 16 A DC, critical for thermally constrained notebook VRMs
Q_g total	33 nC - Defines gate drive power loss (P_drive = Q_g × V_GS × f) at 1 MHz switching frequencies
Q_rr	19 nC - Directly contributes to cross-conduction loss in synchronous FETs; lower than typical 25–30 nC in legacy SO-8 MOSFETs
R_θJA	50 °C/W - Specifies junction-to-ambient thermal resistance on 1-in² 2-oz copper; limits continuous power to ~1.6 W at 70°C ambient
trr	32 ns - Body diode reverse recovery time measured at I_F = 16 A, dI/dt = 100 A/µs, defining minimum dead-time requirements
E_AS	32 mJ - Single-pulse avalanche energy rating confirming robustness against inductive switching faults in converter startup or overload

Pinout & Package

IRF3717 is housed in a standard SO-8 surface-mount package with exposed drain paddle for enhanced thermal performance. The package uses gull-wing leads and conforms to JEDEC MS-012AC dimensions.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Seven paralleled drain terminals connected to internal die drain metallization and exposed paddle; primary current path and thermal conduction path to PCB
6	Gate (G)	Single gate input terminal; low-impedance control node requiring <33 nC charge for full enhancement
Source (S)	Terminals 1–5 are internally shorted to Source via bond wires in top-view layout	Source connection shared across multiple pins to reduce source inductance and improve switching stability in high-dI/dt applications

Key Features

Feature	Design Value
Ultra-low R_DS(on)	3.7 mΩ typ. @ V_GS = 10 V enables <100 mW conduction loss at 16 A, reducing thermal load in dense VRM layouts
Low Q_gd/Q_gs1 ratio	7.3 nC / 6.8 nC ≈ 1.07 - minimizes Miller-induced false turn-on during high dV/dt node transitions in synchronous buck topologies
Fast body diode	trr = 22 ns min, Q_rr = 13 nC min - reduces dead-time penalty and associated shoot-through risk in high-frequency synchronous rectification
SO-8 thermal design	Exposed drain paddle and 7-pin drain configuration provide 20 °C/W junction-to-lead thermal resistance, enabling direct thermal coupling to inner ground planes

Applications

Notebook CPU Voltage Regulator Module (VRM)

Server Point-of-Load (POL) Converter

Use Scenario: High-current, low-voltage regulation for Intel Core i-series processors operating at ≤1.3 V and >60 A peak.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in 2-phase interleaved buck converter; switches at 300–600 kHz with 50 ns dead time.

Use Value: 3.7 mΩ R_DS(on) and 19 nC Q_rr reduce output stage losses by ≥12% versus comparable 5 mΩ MOSFETs, directly improving VRM efficiency and thermal margin.

Use Scenario: 12 V input to 0.85 V/120 A output conversion in dual-processor server motherboards.

IC Role / Device Role / Timing Role: Low-side synchronous FET in multiphase buck regulator; subjected to 100 A/µs dI/dt and 15 V/ns dV/dt at the switch node.

Use Value: 7.3 nC Q_gd and 1.07 Q_gd/Q_gs1 ratio suppress C_dv/dt turn-on, eliminating need for external gate clamping and simplifying gate driver design.

Networking DC-DC Isolated Converter

Industrial FPGA Core Supply

Use Scenario: Secondary-side synchronous rectification in 48 V to 3.3 V isolated forward converter for Ethernet switches.

IC Role / Device Role / Timing Role: Output rectifier FET operating at 250 kHz with 16 A RMS current; body diode conducts during dead time.

Use Value: 22 ns trr and 13 nC Q_rr limit reverse recovery loss to <15 mW per phase, maintaining >92% full-load efficiency without snubbers.

Use Scenario: 5 V to 1.0 V/40 A core supply for Xilinx Kintex-7 FPGA in programmable logic controller (PLC) I/O modules.

IC Role / Device Role / Timing Role: High-side control FET in monolithic buck controller IC reference design; driven by integrated 2-A gate driver.

Use Value: 2.0 V typical V_GS(th) and −5.4 mV/°C tempco ensure stable turn-on timing across −40°C to +85°C industrial temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP	R_DS(on) = 3.0 mΩ @ 10 V; Q_g = 39 nC; SO-8 with enhanced thermal pad	Lower conduction loss but higher gate drive loss; requires stronger gate driver due to 39 nC Q_g	Preferred when board-level thermal design supports <1.2 W dissipation and gate driver can source/sink >2 A peak
IPB040N03L	R_DS(on) = 4.0 mΩ @ 10 V; Q_rr = 25 nC; TO-263-3 package	Higher Q_rr increases dead-time loss; larger footprint and manual reflow profile required	Selected only when SO-8 thermal limits are exceeded and board space allows D²PAK mounting

Compared with SiR872DP and IPB040N03L, IRF3717 offers optimal balance of low Q_rr, moderate Q_g, and SO-8 manufacturability-making it preferred for high-volume, space-constrained notebook and networking POL designs where body diode performance and assembly yield are critical.

Availability

IRF3717 is available at Aetrix Electronics and suitable for notebook CPU VRMs, server point-of-load converters, and isolated DC-DC rectifiers requiring stable component supply, consistent parametric binning, and long-term industrial lifecycle support.

Supply support for IRF3717 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF3717 belongs to the HEXFET® Power MOSFET product line, designed specifically for high-efficiency, high-frequency synchronous rectification in low-voltage DC-DC conversion systems where R_DS(on), Q_rr, and C_dv/dt immunity are jointly optimized.

FAQ

What is the maximum continuous drain current for IRF3717 at 70°C ambient?

The IRF3717 supports 16 A continuous drain current at T_A = 70°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This assumes standard SO-8 mounting on 1-in² 2-oz copper; derating applies above 70°C ambient due to R_θJA = 50 °C/W.

Does IRF3717 have avalanche capability, and how is it rated?

Yes, IRF3717 is fully characterized for unclamped inductive switching. It delivers 32 mJ single-pulse avalanche energy (E_AS) at I_AS = 16 A and T_J = 25°C, with linear derating to 15 mJ at T_J = 125°C. This rating is validated per JEDEC JESD24-1 test conditions.

Can IRF3717 be used with 4.5 V gate drive in synchronous buck applications?

Yes - at V_GS = 4.5 V, R_DS(on) rises to 5.7 mΩ max (per datasheet Fig. 1), supporting ≤12 A continuous current in thermally managed layouts. Gate charge remains usable (Q_gs2 = 2.2 nC), but designers must verify sufficient V_GS margin above V_GS(th) = 2.45 V max to avoid partial turn-on.

How does the SO-8 package of IRF3717 manage heat in high-current operation?

The SO-8 package uses an exposed drain paddle soldered to a large PCB copper area, achieving R_θJL = 20 °C/W to the lead and enabling effective heat transfer to internal ground planes. With proper layout (≥2 in² 2-oz copper), junction temperature rise stays below 40°C at 16 A, 10 V_GS, and 500 kHz switching.

IRF3717 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2890 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF3717 FAQ

1.How can I place an order for IRF3717 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3717 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3717 reliable?

The price and inventory of IRF3717 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3717 is usually 5 days.

3.What payment methods are accepted for IRF3717?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3717 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3717?

IRF3717 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3717 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3717?

For technical support, including IRF3717 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3717 requirements.

6.How does Aetrix verify that IRF3717 is sourced from the original manufacturer or authorized distributors?

All IRF3717 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3717 meets industry standards.

7.What is the process for return or replacement of IRF3717?

All IRF3717 units undergo pre-shipment inspection (PSI). If there is an issue with IRF3717, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3717 part is unused and in its original packaging.

Return procedure for IRF3717:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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